• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.1053-1056
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• 1998

Package strutures for RF circuit design are characterized and their equivalent circuitsare developed. The circuit parameters are extracted by using the commercial 3-dimensional field solver. The circuit models are verified by using the full-wave analysis in the RF region. It is demonstarted with the developed circuit models that the packages have substantial effects on the RF circuit performances.

• 한국산업정보학회논문지
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• 제6권3호
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• pp.123-127
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• 2001

CMOS 트랜지스터의 등가회로모델 파라미터 $C_{gs}$ 의 예측방법이 CMOS 트랜지스의 반전층내의 유동전하량 계산과 전하유도 특성에 의해 제안되었다. 이 $C_{gs}$ 파라미터는 MOS 트랜지스터의 RF대역의 차단주파수를 결정하고 또한 입력과 출력을 커플링 시키는 중요한 파라미터이다. 이 제안된 방법은 등가회로 모델에서 파라미터 값을 예측하고 파라미터 값을 추출하는 소프트웨어 개발에 기여할 것이다.

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.5-9
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• 2003

In this paper, a layout-based CMOS RF model for RFIC's including the capacitance effect, the skin effect, and the proximity effect between metal lines on the Si surface is proposed for the first time for accurately predicting the RF behavior of CMOS devices. With these RF effects, the RF equivalent circuit model based on the layout of the multi-finger gate transistor is presented. The capacitances between metal lines on the Si surface are modeled with the layout. And the skin effect is modeled to the equivalent ladder circuit of metal line. The proximity effect is modeled by adding the mutual inductance between cross-coupled inductances in the ladder circuit representation. Compared to the BSIM 3v3 and other models, the proposed RF model shows better agreements with the measured data and shows well the frequency dependent behavior of devices in GHz ranges.

• 대한전자공학회논문지SD
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• 제40권8호
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• pp.555-559
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• 2003

본 논문에서는 CMOS 소자의 RF 동작을 정확히 예측하기 위해 Si 표면에서의 메탈 라인 사이의 커패시턴스 효과와 표피효과 및 근접효과를 포함한 RF IC 설계를 위한 새로운 CMOS RF 모델을 처음으로 제시하였다. Si 표면에서의 메탈 라인 사이의 커패시턴스는 레이아웃에 기초하여 모델링하였으며, 표피효과는 메탈 라인의 등가회로에 병렬회로를 부가하여 사다리꼴 등가회로로 구현하였다. 근접효과는 사다리꼴 등가회로에서 교차 결합된 인덕턴스 사이의 상호 인덕턴스를 부가함으로써 모델링하였다. 제안된 RF 모델은 BSIM 3v3에 비해 측정 데이터와 잘 일치하였으며, GHz 영역에서 소자 동작의 주파수 종속성을 잘 보여주었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.1119-1122
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• 2000

This paper describes on RF circuit simulation technique, especially on a RF modeling and a model extraction of a LDMOS(Lateral Diffused MOS) that has gate-width (Wg) dependence. Small-signal model parameters of the LDMOSs with various gate-widths extracted from S-parameter data are applied to make the relation between the RF performances and gate-width. It is proved that a source inductance (Ls) was not applicable to scaling rules. These extracted small-signal model parameters are also utilized to remove extrinsic elements in an extraction of a large-signal model (using HP Root MOSFET Model). Therefore, we can omit an additional measurement to extract extrinsic elements. When the large-signal model with Ls having the above gate-width dependence is applied to a high-power LDMOS module, the simulated performances (Output power, etc.) are in a good agreement with experimental results. It is proved that our extracted model and RF circuit simulation have a good accuracy.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2007년도 학술대회
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• pp.27-30
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• 2007

This paper deals with an equivalent circuit model for RF passive components. Rational functions are obtained from the frequency responses of EM simulation by using Foster canonical partial fraction expressions. The Vector Fitting(VF) and the Adaptive Frequency Sampling(AFS) scheme are also implemented to obtain the rational functions. A passivity enforcement algorithm is applied to ensure the stability of the equivalent circuit model. In order to verify the schemes, S parameters of the equivalent circuit model is compared to those of EM simulation in case of the microstrip line structure with 3 slots in ground.

• 정보통신설비학회논문지
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• 제8권1호
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• pp.1-5
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• 2009

In this paper, we propose a method that applies Vector Fitting (VF) technique to the equivalent circuit model for RF passive components. These days wireless communication system is getting smaller and smaller. So EMI/EMC is an issue in RF. We can solve PI/SI (Power Integrity/Signal Integrity) that one of EMI/EMC problem apply IFFT for 3D EM simulation multiple with input signal. That is time consuming task. Therefore equivalent circuit model using RF passive component is important. VF schemes are implemented to obtain the rational functions. S parameters of the equivalent circuit model is compared to those of EM simulation in case of the microstrip line structure.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2009년도 정보통신설비 학술대회
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• pp.281-284
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• 2009

In this paper, we propose a method that applies Adaptive Frequency Sampling(AFS) technique to the equivalent circuit model for RF passive components. Thes days wireless communication system is getting smaller and smaller. So EMI/EMC is an issue in RF. We can solve PI(Power Integrity)/SI(Signal Integrity) that one of EMI/EMC problem apply IFFT for 3D EM simulation multiple with input signal. That is time comuming task. Therefore equivalent circuit model using RF passive component is important. AFS schemes are implemented to obtain the rational functions. S parameters of the equivalent circuit moldel is compared to those of EM simulation in case of the microstrip line structure.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.160-164
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• 2010

The radio frequency (RF) model of SOI FinFETs with gate length of 40 nm is verified by using a 3-dimensional (3-D) device simulator. This paper shows the equivalent circuit model which can be used in the circuit analysis simulator. The RMS modeling error of Y-parameter was calculated to be only 0.3 %.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(1)
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• pp.413-416
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• 2001

In high frequency range, RF circuit design without considering shielding effect can cause several significant changes due to increase in parasitic capacitance and inductance between RF signal lines and shielding box. In this paper, bandpass filter has been made to measure the shielding effect and its s-parameter has been measured by Vector Network Analyzer (VNA). Equivalent circuit model including the shielding effect has been constructed with the lumped elements extracted from the 3D electromagnetic simulator, Maxwell SI. Then, the validity of the model is verified using microwave circuit simulator, ADS (Advanced Design System).