• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.1053-1056
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• 1998

Package strutures for RF circuit design are characterized and their equivalent circuitsare developed. The circuit parameters are extracted by using the commercial 3-dimensional field solver. The circuit models are verified by using the full-wave analysis in the RF region. It is demonstarted with the developed circuit models that the packages have substantial effects on the RF circuit performances.

• Journal of Korea Society of Industrial Information Systems
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• v.6 no.3
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• pp.123-127
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• 2001

The prediction method of the parameter C/sub gs/ of CMOS transistor is proposed by calculating the mobil charge in inversion layer of COMS transistor. This parameter C/sub gs/ decided on the cutoff frequency in MOS transistor in RF range and coupled input and output. This parameter C/sub gs/ in RF range is very important parameter in small signal circuit model. This proposed method is contributed to developing software of extracting parameter value in equivalent circuit model. The method provide the important information to construct a RF nonlinear model for multifinger gate MOSFET. This method will be very valuable to develop a large signal MOSFET model for nonlinear RF IC design.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.5-9
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• 2003

In this paper, a layout-based CMOS RF model for RFIC's including the capacitance effect, the skin effect, and the proximity effect between metal lines on the Si surface is proposed for the first time for accurately predicting the RF behavior of CMOS devices. With these RF effects, the RF equivalent circuit model based on the layout of the multi-finger gate transistor is presented. The capacitances between metal lines on the Si surface are modeled with the layout. And the skin effect is modeled to the equivalent ladder circuit of metal line. The proximity effect is modeled by adding the mutual inductance between cross-coupled inductances in the ladder circuit representation. Compared to the BSIM 3v3 and other models, the proposed RF model shows better agreements with the measured data and shows well the frequency dependent behavior of devices in GHz ranges.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.555-559
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• 2003

In this paper, a new CMOS RF model for RF IC design including the capacitance effect, the skin effect, and the proximity effect between metal lines on the Si surface is proposed for tile first time for accurately predicting the RF behavior of CMOS devices. The capacitances between metal lines on the Si surface are modeled with the layout. And the skin effect is modeled with a parallel branch added in equivalent circuit of metal line. The proximity effect is modeled by adding the mutual inductance between cross-coupled inductances in the ladder circuit representation. Compared to the BSIM 3v3. the proposed RF model shows good agreements with the measured data and shows well the frequency dependent behavior of devices in GHz ranges.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.1119-1122
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• 2000

This paper describes on RF circuit simulation technique, especially on a RF modeling and a model extraction of a LDMOS(Lateral Diffused MOS) that has gate-width (Wg) dependence. Small-signal model parameters of the LDMOSs with various gate-widths extracted from S-parameter data are applied to make the relation between the RF performances and gate-width. It is proved that a source inductance (Ls) was not applicable to scaling rules. These extracted small-signal model parameters are also utilized to remove extrinsic elements in an extraction of a large-signal model (using HP Root MOSFET Model). Therefore, we can omit an additional measurement to extract extrinsic elements. When the large-signal model with Ls having the above gate-width dependence is applied to a high-power LDMOS module, the simulated performances (Output power, etc.) are in a good agreement with experimental results. It is proved that our extracted model and RF circuit simulation have a good accuracy.

• 한국정보통신설비학회:학술대회논문집
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• 2007.08a
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• pp.27-30
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• 2007

This paper deals with an equivalent circuit model for RF passive components. Rational functions are obtained from the frequency responses of EM simulation by using Foster canonical partial fraction expressions. The Vector Fitting(VF) and the Adaptive Frequency Sampling(AFS) scheme are also implemented to obtain the rational functions. A passivity enforcement algorithm is applied to ensure the stability of the equivalent circuit model. In order to verify the schemes, S parameters of the equivalent circuit model is compared to those of EM simulation in case of the microstrip line structure with 3 slots in ground.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.8 no.1
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• pp.1-5
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• 2009

In this paper, we propose a method that applies Vector Fitting (VF) technique to the equivalent circuit model for RF passive components. These days wireless communication system is getting smaller and smaller. So EMI/EMC is an issue in RF. We can solve PI/SI (Power Integrity/Signal Integrity) that one of EMI/EMC problem apply IFFT for 3D EM simulation multiple with input signal. That is time consuming task. Therefore equivalent circuit model using RF passive component is important. VF schemes are implemented to obtain the rational functions. S parameters of the equivalent circuit model is compared to those of EM simulation in case of the microstrip line structure.

• 한국정보통신설비학회:학술대회논문집
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• 2009.08a
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• pp.281-284
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• 2009

In this paper, we propose a method that applies Adaptive Frequency Sampling(AFS) technique to the equivalent circuit model for RF passive components. Thes days wireless communication system is getting smaller and smaller. So EMI/EMC is an issue in RF. We can solve PI(Power Integrity)/SI(Signal Integrity) that one of EMI/EMC problem apply IFFT for 3D EM simulation multiple with input signal. That is time comuming task. Therefore equivalent circuit model using RF passive component is important. AFS schemes are implemented to obtain the rational functions. S parameters of the equivalent circuit moldel is compared to those of EM simulation in case of the microstrip line structure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.160-164
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• 2010

The radio frequency (RF) model of SOI FinFETs with gate length of 40 nm is verified by using a 3-dimensional (3-D) device simulator. This paper shows the equivalent circuit model which can be used in the circuit analysis simulator. The RMS modeling error of Y-parameter was calculated to be only 0.3 %.

• Proceedings of the IEEK Conference
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• 2001.06a
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• pp.413-416
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• 2001

In high frequency range, RF circuit design without considering shielding effect can cause several significant changes due to increase in parasitic capacitance and inductance between RF signal lines and shielding box. In this paper, bandpass filter has been made to measure the shielding effect and its s-parameter has been measured by Vector Network Analyzer (VNA). Equivalent circuit model including the shielding effect has been constructed with the lumped elements extracted from the 3D electromagnetic simulator, Maxwell SI. Then, the validity of the model is verified using microwave circuit simulator, ADS (Advanced Design System).