• 한국표면공학회지
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• 제29권5호
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• pp.357-362
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• 1996

Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2011년도 제37회 추계학술대회논문집
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• pp.694-696
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• 2011

전북대학교 고온플라즈마 응용연구센터 구축사업단에서는 0.4MW/2.4MW급 Huel type 플라즈마장치 및 60kW/200kW급 RF 플라즈마 장치 구축을 목표로 건축 및 장비 지원설비가 센터 부지에 설치되고 있으며 플라즈마 장치의 구축이 완료되면 분말합성, 용사코팅, 지구 재진입 환경 모사 등 일련의 과정을 모두 한자리에서 처리할 수 있을 것으로 예상된다.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2010년도 제35회 추계학술대회논문집
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• pp.781-783
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• 2010

전북대학교 고온 플라즈마 응용 연구 센터 구축사업단은 교육과학기술부 기초연구사업 중 고가연구장비 구축사업을 통하여 고부가가치 재료 연구 및 시험생산이 가능한 소재공정용 60kW 와 200kW ICP(RF) 플라즈마 발생장치를 구축하고 있다. 나노분말소재의 합성과 플라즈마 용사 코팅이 가능한 대형 ICP(RF) 플라즈마 장치 구축을 통하여 차세대 전자 부품 소재의 개발 및 고온 플라즈마 기술의 산업화에 이바지 하고자 한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1568-1569
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• 2006

An electric probe is a conductor inserted into the plasma, by which plasma density and electron temperature can be deduced from the collected current (I) versus applied voltage (V) to the probe. In RF plasma the I-V characteristics of electric probe is distorted due to the RF fluctuation of plasma potential, so that it is hard to measure the real plasma parameters, especially the electron temperature. To eliminate the RF fluctuation, several compensation methods are developed such as RF compensation probe, peak-to-peak method, asymmetric double probe. By comparing proposed methods, a suitable method is to be introduced in determining electron temperatures in RF plasma.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권1호
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• pp.20-23
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• 2004

In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56 [MHz] was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar I line, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 [mTorr], 10∼300 [W], respectively. From emission intensity and lumnance intensity results, the mode transition from E-mode to H-mode was observed. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.79-79
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• 2012

A high temperature and a low temperature plasma process technologies were developed and demonstrated for synthesis, hybrid formation, surface treatment and CVD engineering of nano powder. RF thermal plasma is used for synthesis of spherical nano particles in a diameter ranged from 10 nm to 100 nm. A variety of nano particules such as Si, Ni, has been synthesized. The diameter of the nano-particles can be controlled by RF plasma power, pressure, gas flow rate and raw material feed rate. A modified RF thermal plasma also produces nano hybrid materials with graphene. Hemispherical nano-materials such as Ag, Ni, Si, SiO2, Al2O3, size ranged from 30 to 100 nm, has been grown on graphene nanoplatelet surface. The coverage ranged from 0.1 to 0.7 has been achieved uniformly over the graphene surface. Low temperature AC plasma is developed for surface modification of nano-powder. In order to have a three dimensional and lengthy plasma treatment, a spiral type of reactor has been developed. A similar plasma reactor has been modfied for nano plasma CVD process. The reactor can be heated with halogen lamp.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2010년도 제34회 춘계학술대회논문집
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• pp.417-420
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• 2010

전북대학교 고온 플라즈마 응용연구센터 구축사업은 교육과학기술부의 기초연구사업으로 진행되고 있다. 사업기간은 2009년 7월1일부터 2014년 6월 30일까지 총 5년에 걸쳐 이루어 지고 있으며, 총 사업비는 393억원이다. 플라즈마 응용연구센터에서 구축하고자 하는 장비는 0.4MW급 Enhanced Huels 형 플라즈마 장비 1 set, 2.4MW 급 Enhanced Huels 형 플라즈마 장비 1 set, 그리고 RF 플라즈마 장비 60KW 및 200 KW 각각 1 Set 이다.

• 한국진공학회지
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• 제22권2호
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• pp.66-78
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• 2013

80 kW RF 플라즈마 토치 시스템을 개발하기 위하여, 토치 시스템에 대한 온도, 유체 거동 분석 등의 보다 많은 정보의 추출을 위하여 3차원 시뮬레이션을 진행했다. 파우더 주입관 위치, 입력 전류 변화에 따른 플라즈마 생성 특성, 세라믹 원통관 길이에 따른 플라즈마 방전 특성, 및 공정가스 유량에 따른 플라즈마 온도특성 등을 시뮬레이션 했다. 시뮬레이션을 통해 설계 제작된 RF 열 플라즈마 토치의 경우, 최대 89.3 kW까지 파워 인가가 측정되었다. 개발된 80 kW급 RF 열 플라즈마 토치 시스템의 양산성 평가로 Si 나노분말을 제조하고 특성을 고찰하였다. Si 나노분말의 생산량이 평균 539 g/hr의 양산 수준과 71.6%의 높은 수율을 달성했으며, 제조된 나노 분말은 $D_{99}/D_{50}$가 1.98의 좋은 입경 균일 분포도를 나타내었다.

• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.607-612
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• 1998

RF HPCVD(Helicon Plasma Chemical Vapor Deposition) has been successfully constructed for diamond thin films. The system consists of plasma generation tube, deposition chamber, pumping lines for gas system. A mixture of $CH_4 and H_2$is used for reaction. Two thermocouples, a quartz tube surrounded by a RF antenna and a magnet, and a high temperature heater were set up in the deposition chamber. The process for the thin film diamond deposition has been carried put in a high vacuum system at a substrate temperature of $800^{\circ}C$, and pressure of 5 mtorr. It is also demonstrated. that the RF HPCVD system has advantages for controlling deposition parameters easily.

• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.95-100
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• 1998

A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.