• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.11
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• pp.101-106
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• 2014

This paper presents a wide dynamic range radio-frequency (RF) root-mean-square (RMS) power detector using an automatic gain control (AGC) loop. The AGC loop consists of a variable gain amplifier (VGA), RMS conversion block and gain control block. The VGA exploits dB-linear gain characteristic of the cascade VGA. The proposed circuit utilizes full-wave squaring and generates a DC voltage proportional to the RMS of an input RF signal. The proposed RMS power detector operates from 500MHz to 5GHz. The detecting input signal range is from 0 dBm to -70 dBm or more with a conversion gain of -4.53 mV/dBm. The proposed RMS power detector is designed in a 65-nm 1.2-V CMOS process, and dissipates a power of 5 mW. The total active area is $0.0097mm^2$.

• Journal of IKEEE
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• v.26 no.3
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• pp.456-461
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• 2022

In this paper, a two-stage single-ended power amplifier (PA) with broadband gain characteristics was presented by utilizing a radio frequency (RF) transformer (TF), which is essential for a differential amplifier. The bandwidth of a PA can be improved by designing TF to have broadband characteristics and then applying it to the inter-stage matching network (IMN) of a PA. For broadband gain characteristics while maintaining the performance and area of the existing PA, an IMN was implemented on an monolithic microwave integrated circuit (MMIC) and a multi-layer printed circuit board (PCB), and the simulation results were compared. As a result of simulating the PA module designed using InGaP/GaAs HBT model, it has been confirmed that the PA employing the proposed design method has an improved fractional bandwidth of 19.8% at a center frequency of 3.3GHz, while the conventional PA showed that of 11.2%.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1009-1014
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• 2012

This paper has proposed a 2,500 MHz ~ 2,570 MHz 0.13-${\mu}m$ CMOS RF front-end transmitter for LTE-Advanced systems. The proposed RF front-end transmitter is composed of a quadrature up-conversion mixer and a driver amplifier. The measurement results show the maximum output power level is +6 dBm and the suppression ratio for the image sideband and LO leakage are better than -40 dBc respectively. The fabricated chip consumes 36 mA from a 1.2 V supply voltage.

• Journal of Advanced Information Technology and Convergence
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• v.10 no.1
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• pp.37-43
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• 2020

This paper presents analysis of passive metal interconnection of the LNA block in CMOS integrated circuit. The performance of circuit is affected by the geometry of RF signal path. To investigate the effect of interconnection lines, a cascode LNA is designed, and circuit simulations with full-wave electromagnetic (EM) simulations are executed for different positions of a component. As the results, the position of an external capacitor (C_ex) changes the parasitic capacitance of electric coupling; the placement of component affects the circuit performance. This analysis of interconnection line is helpful to analyze the amount of electromagnetic coupling between the lines, and useful to choose the signal path in the layout design. The target of this work is the RF LNA enabling the seamless connection of wireless data network and the following standards have to be supported in multi-band (WCDMA: 2.11~ 2.17 GHz, CDMA200 1x : 1.84~1.87 GHz, WiBro : 2.3~2.4GHz) mobile application. This work has been simulated and verified by Cadence spectre RF tool and Ansoft HFSS. And also, this work has been implemented in a 0.13um RF CMOS technology process.

• Journal of Navigation and Port Research
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• v.27 no.1
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• pp.81-86
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• 2003

In the paper, the power amplifier using active biasing for LDMOS MRF-21060 is designed and fabricated. Driving amplifier using AH1 and parallel power amplifier AH11 is made to drive the LDMOS MRF 21060 power amplifier. The variation of current consumption in the fabricated 5 Watt power amplifier has an excellent characteristics of less than 0.1A, whereas passive biasing circuit dissipate more than 0.5A. The implemented power amplifier has the gain over 12 dB, the gain flatness of less than $\pm$0.09dB and input and output return loss of less than -19dB over the frequency range 2.11~2.17GHz. The DC operation point of this power amplifier at temperature variation from $0^{\circ}C$ to $60^{\circ}C$ is fixed by active circuit.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1429-1435
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• 2004

In this work, high performance broadband amplifier MMIC including all the matching and biasing components, and electrostatic discharge (ESD) protection circuit was developed for K/Ka band applications. Therefore, external biasing or matching components were not required for the operation of the MMIC. STO (SrTiO3) capacitors were employed to integrate the DC biasing components on the MMIC, and miniaturized LC parallel ESD protection circuit was integrated on MMIC, which increased ESD breakdown voltage from 10 to 300 V. A pre-matching technique and RC parallel circuit were used for the broadband design of the amplifier MMIC. The amplifier MMIC exhibited good RF performances and good stability in a wide frequency range. The chip size of the MMICs was $1.7{\pm}0.8$ mm2.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2003.05a
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• pp.92-96
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• 2003

In this paper, 30 W power Amplifier for IMT-2000 repeater was developed gain flatness and the third IMD (Intermodulation distortion) by Microwave absorber. The absorption ability of the absorber is measured up to -10 ㏈ and -4 ㏈ at 3.6 ㎓, 2.3 ㎓ band respectively. Non using absorber power amplifier has the gain over 57 ㏈, the gain flatness of ${\pm}$0.33 ㏈ and the third IMD of 27 ㏈c at 33.3 W output. Otherwise, using absorber power amplifier has the gain over 58㏈, the gain flatness of less than ${\pm}$0.9, the third IMD over 29 ㏈c at the same output power. As a result, the characteristic of the different type show improvement of 1 ㏈ in gain, 0.3 ㏈ in Gain flatness and 1.77 ㏈c in IMD.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.817-820
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• 1999

In this paper, we describes RF receiver module for IMT-2000 handset with 5MHz channel bandwidth. The fabricated RF receiver module consists of Low Noise Amplifier-, RF SAW filter, Down-converter, IF SAW filter, AGC and PLL Synthesizer. The NF and IIP3 of LNA is 0.8㏈, 3㏈m at 2.14㎓, conversion gain of downconverter is l0㏈, dynamic range of AGC is 80㏈, and phase noise of PLL is -100 ㏈m, at 100KHz. The receiver sensitivity is -110㏈m, adjacent channel selectivity is -48㏈m.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.2
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• pp.281-290
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• 1999

This paper presents the development of a high power amplifier for a transmitter of INMARSAT-C operating at L-band(1626.5∼1646.5 MHz). To simplify the fabrication process, the whole system is designed of two parts composed of a driving amplifier and a high power amplifier The HP's AT-41486 is used for driving part and the SGS-THOMSON microelectronics' STM1645 is used the high power amplifier. The SSPA(Solid State Power Amplifier) was fabricated by the both circuits of RF and temperature compensation in aluminum housing. The realized SSPA has more than 36 dB for small signal within 20MHz bandwidth, and the voltage standing wave ratios(VSWR) of input and output Port are less than 1.5:1, respectively. The output Power of 42.2 dBm is achieved at the 1636.5 MHz. These results reveal a high power amplifier of 20 Watt which is the design target.

• Journal of electromagnetic engineering and science
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• v.5 no.3
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• pp.112-116
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• 2005

This paper presents a broadband two-stage low noise amplifier(LNA) operating from 3 to 10 GHz, designed with 0.18 ${\mu}m$ RF CMOS technology, The cascode feedback topology and broadband matching technique are used to achieve broadband performance and input/output matching characteristics. The proposed UWB LNA results in the low noise figure(NF) of 3.4 dB, input/output return loss($S_{11}/S_{22}$) of lower than -10 dB, and power gain of 14.5 dB with gain flatness of $\pm$1 -dB within the required bandwidth. The input-referred third-order intercept point($IIP_3$) and the input-referred 1-dB compression point($P_{ldB}$) are -7 dBm and -17 dBm, respectively.