Journal of electromagnetic engineering and science

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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An Ultra Wideband Low Noise Amplifier in 0.18 μm RF CMOS Technology

  • Jung Ji-Hak (Department of Electronics and Computer Engineering, Hanyang University) ;
  • Yun Tae-Yeoul (Department of Electronics and Computer Engineering, Hanyang University) ;
  • Choi Jae-Hoon (Department of Electronics and Computer Engineering, Hanyang University)
  • Published : 2005.09.01
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Abstract

This paper presents a broadband two-stage low noise amplifier(LNA) operating from 3 to 10 GHz, designed with 0.18 ${\mu}m$ RF CMOS technology, The cascode feedback topology and broadband matching technique are used to achieve broadband performance and input/output matching characteristics. The proposed UWB LNA results in the low noise figure(NF) of 3.4 dB, input/output return loss($S_{11}/S_{22}$) of lower than -10 dB, and power gain of 14.5 dB with gain flatness of $\pm$1 -dB within the required bandwidth. The input-referred third-order intercept point($IIP_3$) and the input-referred 1-dB compression point($P_{ldB}$) are -7 dBm and -17 dBm, respectively.

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