• Korean Management Science Review
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• v.28 no.2
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• pp.63-74
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• 2011

As business environment has become more competitive, the R&D strategies of firms have been regarded more important. Patent has information about technology which affects a firm's profit and it is considered as resources which have provided appropriate data for research of innovations and trends in technology. And patent indicators are known as qualitative representation of technology quality in an objective view. Also, they are available for the continuous and systematic analysis. However, most previous studies have focused on developing patent indicators to investigate patent value and characteristics. Furthermore they have limitations that most results is not significant that patent indicators have effect on firm performance-Tobin's q, Intangible assets based on balance sheet, sales and etc. Thus, the purpose of this paper is to propose proper a factor to represent a firm performance and to analyze causal relationship between patent indicators and firm performance. Intangible assets based on market value are employed as one of most significant firm performance indicator. The results indicate that intangible assets are appropriate for analyzing causal relation between patent and a firm performance with 7 significant indicators among 10 patent indicators. Considering firm's exogenous factors, regression analysis of each data for five years is performed. This result is similar to regression analysis of full data for all years.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.517-523
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• 2008

The microwave dielectric properties of $LiNb_3O_8-TiO_2$ based ceramics with low firing agents, CuO, $Bi_2O_3$, $B_2O_3$, $SiO_2$, $TiO_2$, were investigated to improve the sintering condition for the LTCC system. According to the X-ray diffraction and SEM, the ceramics of $LiNb_3O_8-TiO_2$ with low firing agents showed no significant second phases within a range of experiments, and fine microstructures. By adding the low firing agents, the sintering temperature decreased from $1200^{\circ}C$ to $925^{\circ}C$. Based on the results of electrical measurements, the $LiNb_3O_8-TiO_2$ ceramics showed a promising microwave dielectric properties for LTCC applications, those are ${\varepsilon}_r$ (dielectric constant) = 44, Q f (quality factor) = 18000, and ${\tau}_f$ (the temperature coefficient of resonant frequency) = $-1.5\;ppm/^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.684-688
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• 2001

The structural, piezoelectric and dynamic range characteristics of modified PbTi $O_3$ceramics were investigated as a function of Mn $O_2$addition. With the increase of Mn $O_2$addition, Curie temperature was decreased. As the increase of Mn $O_2$addition, mechanical quality factor ( $Q_{mt3}$) in the third over tone thickness mode was increased. Dynamic range in the third over tone thickness mode was also increased with the increase of Mn $O_2$addition. The composition ceramics added to 0.075wt% Mn $O_2$showed the best properties for SMD type resonator using third over tone thickness vibration in terms of high Curie temperature more than 31$0^{\circ}C$ and dynamic range of 49.38dB.B.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.597-600
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• 2002

Electrical properties of $\{(Sr_xCa_{1-x})_{0.95-y-z}Bi_2Pb_{0.05+y}\})Ti_{1.02}O_3$ ceramic were studied as a function of Sr/Ca ratio and Bi, Pb contents. Dielectric properties of specimens with different x, y, z values were explained in terms of ionic polarizability with Molecular Additionally Rules and Clausius-Mosotti equation. For the composition of $\{(Sr_{0.62}Ca_{0.38})_{0.90}Bi_{0.01}Pb_{0.09}\})Ti_{1.02}O_3$ and $\{(Sr_{0.62}Ca_{0.38})_{0.905}Bi_{0.015}Pb_{0.08}\})Ti_{1.02}O_3$, dielectric constant$({\varepsilon}_r)$, quality factor(Q) and temperature coefficient(TC) were 389, 3048, -1490 and 394, 1869, -1340 at 1MHz, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.646-649
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• 2002

The microwave dielectric properties and the structure of $Sb_2O_5$ modified $BiNb_xSb_{1-x}O_4$ ceramics were investigated. The structure of these ceramics were orthohombic phase at all sintering temperatures and there were not the second phase. These ceramics added sintering additive such as CuO and $V_2O_5$ were sinterable at a low temperature$(880^{\circ}C{\sim}960^{\circ}C)$ by liquid phase. Dielectric properties of $BiNb_xSb_{1-x}O_4$ ceramics were also improved than these of $BiNbO_4$ ceramics. The content of modified atom controlled the microstructure, dielectric constant and quality factor. As a result, We could obtain following result; ${\varepsilon}r$=42~44, $Q{\cdot}f_0$=20,000~42,000GHz, $\tau_f=-7{\sim}-28ppm/^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.541-544
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• 2002

In this study, a new LTCC material using $ZnWO_4$-LiF system was attempted with respect to use as a capacitor layer in Front-End Module. Pure $ZnWO_4$ must be sintered above $1050^{\circ}C$ in order to obtain up to 98% of full density. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. LiF addition resulted in an liquid phase formation at $810^{\circ}C$ due to interaction between $ZnWO_4$ and LiF. Therefore $ZnWO_4$ with 0.5~1.5wt% LiF could be densified at $850^{\circ}C$. Addition of LiF slightly lowered the dielectric constant from 15.5 to 14.2~15. In the given LiF addition range, the sintering shrinkage increased with increasing LiF content. $Q{\times}fo$ value, however, decreased with increasing LiF content(or increasing densification). This is originated from the interaction between the liquid phase and $ZnWO_4$ and inhomogeneity of grain morphology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1136-1139
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• 2002

The circular cavity resonator which can measure the dielectric properties of dielectrics in the Ka-band(26.5GHz~40GHz) frequency range was designed and fabricated. A structure of the resonator is divided into two equal parts of the length and the dielectric plate sample is placed between two halves. Exciting and detecting of the resonator is performed by WR28 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample, whose permittivity is known to be 13 in millimeter wave range, was used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant $TE_{011}$ mode, the permittivity and $Q{\times}f_0$ were measured as 26.69GHz, 12.9 and 124,000GHz, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.9-13
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• 2001

The effects of glass addition on the densification and the microwave properties of $(Ba_{0.5}Pb_{0.5})Nd_2Ti_5O_{14}$ dielectric system were studied. When 2~3 wt% of borosilicate glass were added, the density increased and the better microwave properties were obtained. When a sample was sintered at $950^{\circ}C$ with 3 wt% of glass, the quality factor and the temperature coefficient of the resonant frequency of the specimen were 4500 and +10 $ppm/^{\circ}C$, respectively. The dielectric constant, however, decreased from 90 to 75 with glass addition.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.6 no.2
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• pp.27-34
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• 1995

In this paper, an X-band TDRO(transistor dielectric resonator oscillator) is designed and experimented with the oscillator constructed. Design of the TDRO is carried out by deriving analycally the coupling parameters between a microstrip line and a dielectric resonator. The coupling parameters take account of the relations among substrate material, ground plane, metallic boundaries surrounding the resonator, distance between a microstrip line and a resonator. Two criteria, external quality factor and coupling coefficient, have been chosen in order to evaluate the performance of the TDRO designed. TDRO studed in this paper may be useful for the application of a microwave system requiring a stable and effective oscillator frequency.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.895-900
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• 1996

Ba(Ti1-xSnx)4O9 powder was synthesized by oxalate method. With the substitution of Sn into Ti site the sintered BaTiO4 crystal phase was stabilized due to the formation of solid solution. The optimal amounts of Sn solutbility for formation of BaTi4O9 crystalline phase was 0.16mole and of Sn was substituted and sintering was done at 135$0^{\circ}C$ for 30 minutes long rod type crystal was well developed and the highest Q value was obtained. But dielectric constant wasnearly constant without regarding to the Sn addition and the sintering time.