• Information Display
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• v.18 no.1
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• pp.20-26
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• 2017

앞서 살펴본 것처럼, QLED의 풀컬러 디스플레이 적용을 위해서는 QD의 RGB 패터닝이 핵심 기술이고, 이를 위해 최근 프린팅 기반의 다양한 패터닝 기술이 연구개발 되고 있다. 아직까지 QLED 소자 기술도 완전히 성숙하지는 않은 상황이므로 풀컬러 디스플레이 실현 시기를 논하기는 조금 이를지도 모르겠다. 하지만 OLED 등의 유사 기술에 비해 발전 속도가 훨씬 빠르기에 긍정적인 시각에서 바라볼 수 있다. LCD 이후 OLED에 이르기까지 국내 디스플레이 산업은 세계 시장에서 주도권을 잃지 않고 있다. OLED의 뒤를 이을 차세대 디스플레이 기술로 QLED가 가장 유망하고, QLED에 대한 정부 및 기업도 큰 관심을 갖는 만큼, 국내 디스플레이 산업의 발전과 세계시장 주도권 유지를 위해 보다 적극적인 R&D 투자, 연구 확대 등이 필요한 상황이다. 이를 바탕으로 머지않은 미래에 QLED가 디스플레이로 활용되기를 기대해 본다.

• Information Display
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• v.22 no.2
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• pp.22-29
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• 2021

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.449-469
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• 2017

The development of quantum dots (QDs) has had a significant impact on various applications, such as solar cells, field-effect transistors, and light-emitting diodes (LEDs). Through successful engineering of the core/shell heterostructure of QDs, their photoluminescence (PL) quantum yield (QY) and stability have been dramatically enhanced. Such high-quality QDs have been regarded as key fluorescent materials in realizing next-generation display devices. Particularly, electrically driven (or electroluminescent, EL) QD light-emitting diodes (QLED) have been highlighted as an alternative to organic light-emitting diodes (OLED), mostly owing to their unbeatably high color purity. Structural optimizations in QD material as well as QLED architecture have led to substantial improvements of device performance, especially during the past decade. In this review article, we discuss QDs with various semiconductor compositions and describe the mechanisms behind the operation of QDs and QLEDs and the primary strategies for improving their PL and EL performances.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.455-461
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• 2023

We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electron transport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the density of states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energy levels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reduced leakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low driving voltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs could be achieved.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.69-72
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• 2020

In this study, the inverted structured electroluminescence (EL) devices were fabricated with double electron transport layers (ETLs). The conduction band minimum (CBM) of TiO₂ NPs is lower than SnO₂ NPs. Therefore, it is expected that inserting TiO₂ NPs between the SnO₂ layer and the emission layer (EML) will reduce the energy barrier and transport electrons smoothly. The quantum dot light emitting diodes (QLEDs) with double ETLs showed the enhanced emission characteristics than those with only SnO₂ layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.393-398
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• 2019

A poly[bis(4-butypheny)-bis(phenyl)benzidine] (poly-TPD) and poly(9-vinylcarbazole) (PVK) bilayer was employed as a hole transport layer (HTL) in solution-processed CdSe/ZnS quantum dot light-emitting diodes (QLEDs). The thickness of the PVK layer spin-coated onto the poly-TPD layer, whose thickness was fixed to 40 nm, was varied, with PVK layer thicknesses of 0 nm, 35 nm, 45 nm, and 55 nm. Because the thickness of the PVK can determine the hole transport properties of the HTL, a PVK thickness that maximizes the performance of the HTL for the QLEDs was investigated. By employing the optimized PVK thickness of 45 nm, the current efficiency of the QLED exhibited a 1.74 times improvement when compared with that of the QLED with poly-TPD based HTL without PVK. This was mainly attributed to the decrease in the energy barrier between the HTL and the quantum dot (QD) emitting layer (EML).

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.69-72
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• 2021

Various studies for QLEDs using inkjet printing has been actively conducted. Multilayers in QLEDs need an orthogonal process inevitably using different solvents and it makes the inkjet printing process more difficult and expensive. Therefore, coating two layers in a single process can reduce the fabrication step, resulting in the process time. In this study, we fabricated QLEDs of standard structure using a mixture of emission layer and hole transport layer. The mixed layer was fabricated by dissolving TFB and QDs in chlorobenzene, and the maximum luminance of the device was 45,850 cd/m². It shows the bright future of the electroluminescence devices applied with inkjet printing process.

• Journal of Information Display
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• v.13 no.2
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• pp.91-95
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• 2012

Indium phosphide (InP) quantum dots (QDs) are considered alternatives to Cd-containing QDs for application in light-emitting devices. The multishell coating with ZnSe/ZnS was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. Structural proof for this system was provided by X-ray diffraction and transmission electron microscopy. QY values in the range of 50-70% along with peak widths of 45-50 nm can be routinely achieved, making the optical performance of InP/ZnSe/ZnS QDs comparable to that of Cd-based QDs. The fabrication of a working electroluminescent light-emitting device employing the reported material demonstrated the feasibility of the desired application.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.466-466
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• 2013

Quantum-dot materials have introduced novel applications in organic light-emitting diodes and solar cells. The size controllability and structure modifications have continuously been upgrading the applicability to optoelectronic and flat-panel displays. In particular, quantum-dot organic light-emitting diodes (QLEDs) are a device driven through the electrical field applied to the electrical diodes. The QLEDs are affected by the constituent materials and the corresponding device structures. Conventionally, the electrical properties are characterized only in terms of dc-based current-voltage characteristics. The dynamic change in light-emitting diodes should be characterized in emitted and non-emitted states. Therefore, the frequency-dependent impedance can offer different information on the electrical performance in QLED. The current work reports an auxiliary information on the electrical and optical features originating from quantum-dot organic light-emitting diodes. The empirical characterizations are discussed towards an experimental tool in optimizing the light-emitting diodes.

• Current Optics and Photonics
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• v.4 no.3
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• pp.161-173
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• 2020

Colloidal quantum dots (QDs) have gained tremendous attention as a key material for highly advanced display technologies. The performance of QD light-emitting diodes (QLEDs) has improved significantly over the past two decades, owing to notable progress in both material development and device engineering. The brightness of QLEDs has improved by more than three orders of magnitude from that of early-stage devices, and has attained a value in the range of traditional inorganic LEDs. The emergence of high-luminance (HL) QLEDs has induced fresh demands to incorporate the unique features of QDs into a wide range of display applications, beyond indoor and mobile displays. Therefore it is necessary to assess the present status and prospects of HL-QLEDs, to expand the application domain of QD-based light sources. As part of this study, we review recent advances in HL-QLEDs. In particular, based on reports of brightness exceeding 10⁵ cd/㎡, we have summarized the major approaches toward achieving high brightness in QLEDs, in terms of material development and device engineering. Furthermore, we briefly introduce the recent progress achieved toward QD laser diodes, being the next step in the development of HL-QLEDs. This review provides general guidelines for achieving HL-QLEDs, and reveals the high potential of QDs as a universal material solution that can enable realization of a wide range of display applications.