• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.7-12
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• 2006

Local minority carrier lifetime control by means of particle irradiation is an useful technology for Production of modern silicon Power devices. Crystal damage due to ion irradiation can be easily localized by choosing appropriate irradiation energy and minority tarrier lifetime can be reduced locally only in the damaged layer. In this work, proton irradiation technology was used for improving the switching characteristics of a un diode. The irradiation was carried out with various energy and dose condition. The device was characterized by current-voltage, capacitance-voltage, and reverse recovery time measurements. Forward voltage drop was increased to 1.1 V at forward current of 5 A, which was $120\%$ of its original device. Reverse leakage current was 64 nA at reverse voltage of 100 V, and reverse breakdown voltage was 670 V which was the same voltage as original device without irradiation. The reverse recovery time of device was reduced to about $20\%$ compared to that of original device without irradiation.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.49-49
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• 2006

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.57-57
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• 2006

• Microbiology and Biotechnology Letters
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• v.38 no.3
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• pp.235-243
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• 2010

For decades, traditional mutation breeding technologies using spontaneous mutation, chemicals, or conventional radiation sources have contributed greatly to the improvement of crops and microorganisms of agricultural and industrial importance. However, new mutagens that can generate more diverse mutation spectra with minimal damage to the original organism are always in need. In this regard, ion beam irradiation, including proton-, helium-, and heavier-charged particle irradiation, is considered to be superior to traditional radiation mutagenesis. In particular, it has been suggested that ion beams predominantly produce strand breaks that often lead to mutations, which is not a situation frequently observed in mutagenesis induced by gamma-ray exposure. In this review, we briefly describe the general principles and history of particle accelerators, and then introduce their successful application in ion beam technology for the improvement of crops and microbes. In particular, a 100-MeV proton beam accelerator currently under construction by the Proton Engineering Frontier Project (PEFP) is discussed. The PEFP accelerator will hopefully prompt the utilization of ion beam technology for strain improvement, as well as for use in nuclear physics, medical science, biology, space technology, radiation technology and basic sciences.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2022.10a
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• pp.623-625
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• 2022

In this paper, the proton induced attenuation characteristics were evaluated for 5 types of commercial single-mode optical fibers using a proton accelerator. The proton beam used in the irradiation test has a high energy of 100 MeV class, and the test was performed by setting the uniformity of the beam irradiation area to 10% or less. According to the type of optical fiber (internal material, impurities), the radiation induced attenuation by the proton irradiation showed a noticeable difference.

• Journal of Radiation Industry
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• v.10 no.1
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• pp.1-5
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• 2016

In this study, the effect of high-energy proton irradiation on the optical properties of polyacrylonitrile (PAN) films was investigated. PAN thin films spin-coated on a substrate were irradiated 150 keV proton ions at various fluences. The changes in the chemical structure and optical properties were investigated by FT-IR and UV-vis spectroscopy. The results of the FT-IR analysis revealed that the cyclization reaction took place by proton irradiation and the degree of cyclization increased with an increasing fluence. Based on the UV-vis analysis, the optical band gap of PAN decreased from 2.84 to 2.52 eV with an increasing fluence due to the formation of carbon clusters by proton irradiation. In addition, the number of carbon atoms per carbon cluster and the number of carbon atoms per conjugation length were found to be increased with an increasing fluence.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.1015-1020
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• 2023

A multi-layer design is applied to mitigate single event effect (SEE) in a 28 nm System-on-Chip (SoC). It depends on asymmetric multiprocessing (AMP), redundancy and system watchdog. Irradiation tests utilized 70 and 90 MeV proton beams to examine its performance through comparative analysis. Via examining SEEs in on-chip memory (OCM), compared with the trial without applying the multi-layer design, the test results demonstrate that the adopted multi-layer design can effectively mitigate SEEs in the SoC.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.192-194
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• 2002

We present the results on the calibration of iso-center positions using the quality assurance system established at PMRC for determination of center position in X-ray and proton irradiation fields. Details on the system are presented in another presentation in this session. The equipment in the system is mounted on a patient treatment bed in each proton exposure room, G1 or G2. A center of a stainless ball on the equipment is set at a cross of laser markers located around the iso-center and fixed on the room and on the snout in the gantry. A proton beam or an X-ray beam is exposed onto the ball through a brass collimator of 100 mm ${\times}$ 100 mm and projected onto the imaging plate set at I cm behind the ball. On the axis perpendicular to the thrust axis of the gantry on the imaging plate, a distance between a center of the collimator image and a center of the ball image varies as a cosine function of gantry angles unless the ball is set on the iso-center. An amplitude of the cosine curve shows the distance between the ball and the iso-center, an offset the offset of the collimator, and a phase shift at a zero crossing point the ball direction viewed from the iso-center. We present the relation among the iso-center position, the laser maker position, and the center of proton and X-ray irradiation fields. Its stability and its reproducibility are discussed.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.53 no.2
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• pp.150-155
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• 2008

This experiment was carried out to investigate the effect of proton ion and gamma-ray irradiation on microspore culture of the flower buds of $M_2$ generation in winter type of Brassica napus L. ssp. oleifera. The seeds of three rape varieties, 'Halla', 'Naehan' and 'Tammi' were pretreated with proton ion and gamma-ray 400 Gy and 600 Gy, respectively. When microspore culture techniques were used, embryogenesis was increased in some varieties by proton ion and gamma-ray irradiation treated flower buds of $M_2$ generation than control. In genotypes 'Naehan' showed the highest embryo production frequency, but 'Tammi' showed lowest embryo production frequency. Some of the embryoids developed directly into plantlets, whereas others developed abnormally multilobe. Plants were regenerated and successfully acclimatized in pots.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.307-311
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• 2010

Positron annihilation lifetime spectroscopy is applied to BaSrFBr : Eu film which is used for the phosphore layer, and afterwards the reliability and self-consistency of source corrections in the positron lifetime spectroscopy is investigated using a $^{22}Na$ positron emitter covered by thin foils. The positron lifetime showed no significant change through the various proton irradiation energies. It is unusual that the measurements of the defects indicate that most of the defects were likely to have been generated by X-ray radiation. This may have resulted from the Bragg peaks of the proton characteristics. The Bragg peak does not affect the defect signals enough to distinguish the lifetimes and intensities in a material that is includes multi-grains. The lifetime ($\tau_1$) associated with positron annihilations in the Ba, Br, and Eu of the sample was about 250 ps, and due to the annihilations at F-centers or defects from the irradiated protons in sample, the lifetime ($\tau_2$) was about 500 ps.