• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.212-215
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• 1999

High-speed device is essential to optoelectric IC for optical storage system such as CD-ROM, DVD, and to ADC for high-speed communication system. This paper represents the BiCMOS process which contains high-speed SAVEN bipolar transistor and analyzes the frequency and switching characteristics of it briefly. Finally, to prove that the SAVEN device is adequate for high-speed system, latched comparator operating at 500MHz is designed with the SPICE parameter extracted from BiCMOS device simulation.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.12
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• pp.1017-1021
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• 2015

Induction heating has been applied to the preheating process in various industrial fields. It has been used as a simple device structure, limiting the heating zone through controlled variables, and free-welding positions. It would be helpful to weld thick plates with arc welding such as GMAW. The induction heating process is well suited to this process. In this study, in order to find suitable induction heating parameters, a simulation was conducted with multi physics S/W. Three kinds of material were heated by induction coils designed specially for thick plate. Consequently, steel and nimonic alloy were the most efficient materials for preheating by induction. It can be concluded that the induction heating process is a good method for preheating the thick plate.

• Journal of the Korea Society for Simulation
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• v.18 no.4
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• pp.219-225
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• 2009

The primary purpose of this study is to build computer models referring overall flow of complex and various semiconductor wafer manufacturing process and to implement a educational model which operates with a presentation tool showing device design. It is important that Korean semiconductor industries secure high competitive power on efficient manufacturing management and to develop technology continuously. Models representing the FAB processes and the functions of each process are developed for Seoul National University Semiconductor Research Center. However, it is expected that the models are effective as visually educational tools in Korean semiconductor industries. In addition, it is anticipated that these models are useful for semiconductor process courses in academia. Scalability and flexibility allow semiconductor manufacturers to customize the models and perform simulation education. Subsequently, manufacturers save budget.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.210-213
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• 2017

In this paper, we analyzed the structural design and electrical characteristics of a 3.3 kV super junction FS IGBT as a next generation power device. The device parameters were extracted by design and process simulation. To obtain optimal breakdown voltage, we researched the breakdown characteristics. Initially, we confirmed that the breakdown voltage decreased as trench depth increased. We analyzed the breakdown voltage according to p pillar dose. As a result of the experiment, we confirmed that the breakdown voltage increased as p pillar dose increased. To obtain more than 3.3 kV, the p pillar dose was $5{\times}10^{13}cm^{-2}$, and the epi layer resistance was $140{\Omega}$. We extracted design and process parameters considering the on state voltage drop.

• Journal of Electrical Engineering and Technology
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• v.4 no.3
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• pp.401-404
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• 2009

A simple analytical expression for a current gain of IGBT is derived in terms of the device parameters as well as a gate length dependent parameter, which allows for the determination of the current components of the device as a function of its gate length. The analytical results are compared with those from simulation results. A good agreement is found.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2003.11a
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• pp.291-298
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• 2003

Recently, load/unload(L/UL) process is applied to a computer information storage device due to its advantages such as lower power consumption, larger data zone, simpler fabrication of disk for no bumped parking zone, and rarer contact between the slider and media. An analysis of the transient motion for the slider is very important to design an air bearing surface (ABS) of the slider to secure the stable performance of the system. During the L/UL process, however, there are several issues occurred such as contact or collision between slider and media. Sometimes this will cause the system failure. In this study, the dynamics of the slider during the loading process are investigated through a numerical simulation using FEM analysis and experiment.

• Journal of Korea Society of Industrial Information Systems
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• v.22 no.2
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• pp.71-78
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• 2017

In This Paper, A DC-DC Boost Converter for Portable Device has been Proposed. The Converter Which is Operated with 1 MHz High Switching Frequency is Capable of Reducing Mounting Area of Passive Devices Such as Inductor and Capacitor, Consequently is Suitable for Portable Device. This Boost Converter Consists of a Power Stage and a Control Block and a Protect Block. Proposed DC-DC Boost Converter has been Designed a 0.18 um Magnachip CMOS Process Technology, we Examined Performances of the Fabricated Chip and Compared its Measured Results with SPICE Simulation Data. Simulation Results Show that the Output Voltage is 4.8 V in 3.3 V Input Voltage, Output Current 95 mA Which is Larger than 20~50 mA.

• Journal of the Korea Society for Simulation
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• v.18 no.4
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• pp.67-79
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• 2009

Because a product in the car industry has a short life cycle in recent years, the process planning and the manufacturing lines have to be changed frequently. Most of time, repositioning an existing facility and modifying used control information are faster than making completely new process planning. However, control information and control code such as PLC code are difficult to understand. Hence, industries prefer writing a new control code instead of using the existing complex one. It shows the lack of information reusability in the existing process planning. As a result, to reduce this redundancy and lack of reusability, we propose a SOS-Net modeling method. SOS-Net is a standard methodology used to describe control information. It is based on the Device Structure which consists of sensor information derived from device hardware information. Thus, SOS-Net can describe a real control state for automated manufacturing systems. The SOS-Net model is easy to understand and can be converted into PLC Code easily. It also enables to modify control information, thus increases the reusability of the new process planning. Proposed model in this paper plays an intermediary role between the process planning and PLC code generation. It can reduce the process planning and implementation time as well as cost.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.13 no.11
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• pp.875-881
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• 2003

The received signal of a mobile phone is normally sensed through two independent means which are the sound generation of a speaker and vibration generation of a vibration motor. As an improvement scheme to meet the consumer's demand on weight reduction and miniaturization of a mobile phone, the design and development of an integrated vibration and sound generating device are performed in this research. To this purpose, the optimal shapes of the voice coil. the permanent magnet and the vibration plate are designed, and the excitation force applied to the vibration system of the new device is estimated and verified through theoretical analyses, computer simulation, and experiments using an expanded model. In addition, vibration performance comparison of the device with the existing vibration motor is performed, and from the overall process, therefore, the method and procedure for the vibration performance analysis of the integrated vibration and sound generating device are established.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.100-104
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• 2012

Fin-type SONOS (silicon-oxide-nitride-oxide-silicon) flash memory has emerged as novel devices having superior controls over short channel effects(SCE) than the conventional SONOS flash memory devices. However despite these advantages, these also exhibit undesirable characteristics such as corner effect. Usually, the corner effect deteriorates the performance by increasing the leakage current. In this paper, the corner effect of fin-type SONOS flash memory devices is investigate by 3D Process and device simulation and their electrical characteristics are compared to conventional SONOS devices. The corner effect has been observed in fin-type SONOS device. The reason why the memory characteristic in fin-type SONOS flash memory device is not improved, might be due to existing undesirable effect such as corner effect as well as the mutual interference of electric field in the fin-type structure as reported previously.