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A Study on the Corner Effect of Fin-type SONOS Flash Memory Using TCAD Simulation

TCAD 시뮬레이션을 이용한 Fin형 SONOS Flash Memory의 모서리 효과에 관한 연구

  • Yang, Seung-Dong (Department of Electronics Engineering, Chungnam National University) ;
  • Oh, Jae-Sub (Nano Patterning Process Team, National Nanofab Center) ;
  • Yun, Ho-Jin (Department of Electronics Engineering, Chungnam National University) ;
  • Jeong, Kwang-Seok (Department of Electronics Engineering, Chungnam National University) ;
  • Kim, Yu-Mi (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Sang-Youl (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Hee-Deok (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University)
  • 양승동 (충남대학교 전자전파정보통신공학과) ;
  • 오재섭 (나노종합팹센터 나노패턴팀) ;
  • 윤호진 (충남대학교 전자전파정보통신공학과) ;
  • 정광석 (충남대학교 전자전파정보통신공학과) ;
  • 김유미 (충남대학교 전자전파정보통신공학과) ;
  • 이상율 (충남대학교 전자전파정보통신공학과) ;
  • 이희덕 (충남대학교 전자전파정보통신공학과) ;
  • 이가원 (충남대학교 전자전파정보통신공학과)
  • Received : 2012.01.19
  • Accepted : 2012.01.23
  • Published : 2012.02.01

Abstract

Fin-type SONOS (silicon-oxide-nitride-oxide-silicon) flash memory has emerged as novel devices having superior controls over short channel effects(SCE) than the conventional SONOS flash memory devices. However despite these advantages, these also exhibit undesirable characteristics such as corner effect. Usually, the corner effect deteriorates the performance by increasing the leakage current. In this paper, the corner effect of fin-type SONOS flash memory devices is investigate by 3D Process and device simulation and their electrical characteristics are compared to conventional SONOS devices. The corner effect has been observed in fin-type SONOS device. The reason why the memory characteristic in fin-type SONOS flash memory device is not improved, might be due to existing undesirable effect such as corner effect as well as the mutual interference of electric field in the fin-type structure as reported previously.

Keywords

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