• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.521-524
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• 1996

A new zero voltage and nero current switching(ZVZCS) full bridge(FB) PWM converter b proposed to improve the performance of the previously presented ZVZCS-FB-PWM converters [7,8]. By adding a secondary active clamp and controlling the clamp switch moderately, ZVS(for leading-leg switches) are ZCS(for lagging-leg switches) are achieved without nay lossy components, the reverie avalanche break down of leading-leg IGBTs[7] or the saturable reactor in the primary[8]. Many advantages including simple circuit topology, high efficiency, and low cost mate the new converter attractive for high voltage and high power(> 10 kW) applications. The principle of operation is explained and analyzed. The features and design considerations of the new converter are also illustrated and verified on an 1.8 kW, 100 kHz IGBT based experimental circuit.

• Journal of Power Electronics
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• v.11 no.4
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• pp.606-611
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• 2011

Power electronics is a key technology for electric, hybrid, plug-in hybrid, and fuel cell vehicles. Typical power electronics converters used in electric drive vehicles include dc/dc converters, inverters, and battery chargers. New semiconductor materials such as silicon carbide (SiC) and novel topologies such as the Z-source inverter (ZSI) have a great deal of potential to improve the overall performance of these vehicles. In this paper, a Z-source inverter for fuel cell vehicle application is examined under three different scenarios. 1. a ZSI with Si IGBT modules, 2. a ZSI with hybrid modules, Si IGBTs/SiC Schottky diodes, and 3. a ZSI with SiC MOSFETs/SiC Schottky diodes. Then, a comparison of the three scenarios is conducted. Conduction loss, switching loss, reverse recovery loss, and efficiency are considered for comparison. A conclusion is drawn that the SiC devices can improve the inverter and inverter-motor efficiency, and reduce the system size and cost due to the low loss properties of SiC devices. A comparison between a ZSI and traditional PWM inverters with SiC devices is also presented in this paper. Based on this comparison, the Z-source inverter produces the highest efficiency.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1063-1066
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• 1992

As the adjustable speed drives by means of PWM inverter are applied to a wider field of industries, the demands for lower acoustic noise caused by modulation is becoming more intense. With the development of high speed power semiconductor device such as the IGBTs, a higher carrier frequency can be adopted to increase the switching frequency to the supersonic range. The optimal magnitude of this signal is determined so that the sideband components near the carrier frequency are minimized

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1066-1071
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• 2005

This paper presents the two lossless auxiliary inductors-assisted voltage source type half bridge (single ended push pull: SEPP) series resonant high frequency inverter for induction heated fixing roller in copy and printing machines. The simple high-frequency inverter treated here can completely achieve stable zero current soft switching (ZCS) commutation for wide its output power regulation ranges and load variations under its constant high frequency pulse density modulation (PDM) scheme. Its transient and steady state operating principle is originally described and discussed for a constant high-frequency PDM control strategy under a stable ZCS operation commutation, together with its output effective power regulation characteristics-based on the high frequency PDM strategy. The experimental operating performances of this voltage source SEPP ZCS-PDM series resonant high frequency inverter using IGBTs are illustrated as compared with computer simulation results and experimental ones. Its power losses analysis and actual efficiency are evaluated and discussed on the basis of simulation and experimental results. The feasible effectiveness of this high frequency inverter appliance implemented here is proved from the practical point of view.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.11a
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• pp.415-420
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• 2005

This paper presents the two lossless auxiliary inductors-assisted voltage source type half bridge (single ended push pull: SEPP) series resonant high frequency inverter for induction heated king roller in copy and printing machines. The simple high-frequency inverter treated here can completely achieve stable zero current soft switching (ZCS) commutation for wide its output power regulation ranges and load variations under its constant high frequency pulse density modulation (PDM) scheme. Its transient and steady state operating principle is originally described and discussed for a constant high-frequency PDM control strategy under a stable ZCS operation commutation, together with its output effective power regulation characteristics-based on the high frequency PDM strategy. The experimental operating performances of this voltage source SEPP ZCS-PDM series resonant high frequency inverter using IGBTs are illustrated as compared with computer simulation results and experimental ones. Its power losses analysis and actual efficiency are evaluated and discussed on the basis of simulation and experimental results. The feasible effectiveness of this high frequency inverter appliance implemented here is proved from the practical point of view.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.11
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• pp.22-27
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• 2009

This paper presents a two-paralleled four quadrant DC chopper type PWM power conversion circuit in order to generate a gradient magnetic field in the Magnetic Resonance Imaging (MRI) system. This circuit has 8-IGBTs at their inputs/outputs to realize further high-power density, high speed current tracking control, and to get a low switching ripple amplitude in a controlled current in the Gradient Coils (GCs). Moreover, the power conversion circuit has to realize quick rise/fall response characteristics in proportion to various target currents in GCs. It is proposed in this paper that a unique control scheme can achieve the above objective DSP-based control system realize a high control facility and accuracy. It is proved that the new control system will greatly enlarge the diagnostic target and improve the image quality of MRI.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.208-211
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• 2018

This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

• Journal of IKEEE
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• v.11 no.4
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• pp.158-164
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• 2007

In this study, three types of a novel Trench IGBTs(Insulated Gate Bipolar Transistor) are proposed. The first structure has P-collector which is isolated by $SiO_2$ layer to enhance anode-injection-efficiency and enable the device to have a low on-state voltage drop(Von). And the second structure has convex P-base region between both gates. This structure may be effective to distributes electric-field crowded to gate edge. So this structure can have higher breakdown voltage(BV) than conventional trench-type IGBT(TIGBT). The process and device simulation results show improved on-state, breakdown and switching characteristics in each structure. The first one was presented lower on state voltage drop(2.1V) than that of conventional one(2.4V). Also, second structurehas higher breakdown voltage(1220V) and faster turn off time(9ns) than that of conventional structure. Finally, the last one of the proposed structure has combined the two structure (the first one and second one). This structure has superior electric characteristics than conventional structure about forward voltage drop and blocking capability, turnoff characteristics.