• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.321-324
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• 2001

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade in response to the constant demand for increased speed, decreased power, and increased packing density. This paper has compared Micro-Tec with ISE-TCAD. This paper investigates LDD MOSFET using two simulators. Bias condition is applied to the devices with gate lengths 180nm. We have presented MOSF ET's characteristics such as I-V characteristic, electric field. and compared with Micro-Tec and ISE-TCAD.

• Proceedings of the KSR Conference
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• 2005.11a
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• pp.665-670
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• 2005

This paper introduces the propulsion system(Motor Block) stabilization test result for Korean High Speed Railway(HSR). The developed propulsion system using high power semiconductor, IGCT(Integrated Gate Commutated Thyristor) consists of two PWM converter and VVVF inverter. In this paper, overall configuration of propulsion system is briefly described and stabilization tests are made to verify the developed propulsion system. The presented test results shows beatless control method of inverter output current at the 200km/h and performance test of BCH.

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.1084-1086
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• 2003

3-Phase BLDC Motor, which is generally used, has limited usage in high speed, due to pulsation torque occurring commutation and variable speed. To solve this problem, it is necessary to increase invariable, pole number, or the number of slots. Currently, due to rapid growth of semiconductor technology and trend toward smaller and cheaper production of switching device, multi-phase BLDC Motor for high speed, high output power is being actively pursued to produce. In this paper 7-Phase BLDC Motor drive system is designed and Vector modulator is studied.

• Electronics and Telecommunications Trends
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• v.33 no.6
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• pp.1-11
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• 2018

Several industrial applications such as space exploration, aerospace, automotive, the downhole oil and gas industry, and geothermal power plants require specific electronic systems under extremely high temperatures. For the majority of such applications, silicon-based technologies (bulk silicon, silicon-on-insulator) are limited by their maximum operating temperature. Silicon carbide (SiC) has been recognized as one of the prime candidates for providing the desired semiconductor in extremely high-temperature applications. In addition, it has become particularly interesting owing to a Si-compatible process technology for dedicated devices and integrated circuits. This paper briefly introduces a variety of SiC-based integrated circuits for use under extremely high temperatures and covers the technology trend of SiC CMOS devices and processes including the useful implementation of SiC ICs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.394-400
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• 2014

In this study, we fabricated ITZO thin films on glass substrates with various RF power from 30 to 60W and investigated the electrical, optical and structural properties. ITZO thin film deposited at 50W exhibited the largest figure of merit ($10.52{\times}10^{-3}{\Omega}^{-1}$) and then its resistivity and sheet resistance were $3.08{\times}10^{-4}{\Omega}-cm$ and $11.41{\Omega}/sq.$, respectively. As results of optical characterization, average transmittance of all ITZO thin films were over 80%. ITZO thin films had amorphous structure regardless of the RF power. The FESEM and AFM results showed that all ITZO thin films have a very smooth surface having no cracks and defects and the film deposited at 50W exhibit the smallest surface roughness of 0.254nm. We found that a amorphous ITZO thin film is a very promising material for replacing ITO in the next display device such as OLED.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.3
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• pp.35-42
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• 2021

The research of amplifier have been actively conducted to replace the Traveling Wave Tube Amplifier (TWTA) in the mmWave. For Solid State Power Amplifiers (SSPA), which combine semiconductor-type devices to obtain high output, Low-loss, high-efficiency combination techniques are required to meet the required output as the output of a single relatively low device is relatively low. In this paper, we design and produce an 8-way waveguide combiner and a reflective loss of more than 20dB and a binding efficiency of 85% or more were identified. Field analysis calculates the critical power inside the combiner. It secured stable Power Ratings and built-in coupler for power monitoring to achieve miniaturization and light weight.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.107-116
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• 2012

In this paper, the trade-off related to bandwidth of high-speed common-mode logic frequency divider is analyzed in detail. A method to optimize the operating frequency, band-width as well as power consumption is proposed. This method is based on bipolar device characteristics, whereby a negative resistance model can be used to estimate the optimal normalized upper frequency and lower frequency of frequency dividers under different conditions, which is conventionally ignored in literatures. This method provides a simple but efficient procedure in designing high performance frequency dividers for different applications. To verify the proposed method, a static divide-by-2 at millimeter wave ranges is implemented in 180 nm SiGe technology. Measurement results of the divider demonstrate significant improvement in the figure of merit as compared with literatures.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.4
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• pp.327-331
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• 2014

LED(Light Emitting Diode) is a semiconductor device utilizing electroluminescent effect is a phenomenon in which a type of P-N junction diode, the light of short wavelength which a voltage is applied in the forward direction is released. LED is advantageous in reducing the energy as environmentally materials that can greatly reduce the carbon emissions, recent it has attracted attention IT(Information Technology) and GT(Green Technology) industry. In addition, there are advantages long life, high efficiency, and excellent response speed, LED have come into the spotlight as the illumination means to replace the existing fluorescent light and incandescent light bulb. When connecting to MR16 electronic transformer for existing LED driver circuit, due to malfunction of the dimmer and the electronic transformer, flicker occurs and linear dimming is not possible. Therefore, in this paper, we suggest an LED drive circuit there is no flicker with the corresponding dimming MR16 electronic transformer. Further, we explain the principles of the LED current control technique and the principle of the drive circuit of the LED, in order to validate the proposed circuit through prototyping and simulation.

• Progress in Superconductivity and Cryogenics
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• v.8 no.2
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• pp.20-24
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• 2006

Recently, utility network is becoming more and more complicated and huge due to IT and OA devices. In addition to, demands of power conversion devices which have non-linear switching devices are getting more and more increased. Consequently, because of the non-linear power semiconductor devices, current harmonics are unavoidable. Sometimes those current harmonics flow back to utility network and become one of the main reasons which can make the voltage distortion. Also, it makes noise and heat loss. On the other hands, voltage sag from sudden increasing loads is also one of the terrible problems inside of utility network. In order to compensate the current harmonics and voltage sag problem, AF(active filter) systems could be a good solution method. SMES is a very good promising source due to it's high response time of charge and discharge. Therefore, the combined AF and SMES system can be a wonderful device to compensate both harmonics current and voltage sag. However, SMES needs a superconducting magnetic coil. Because of using this superconducting magnetic coil, quench problem caused by unexpected reasons have always been unavoidable. Therefore, to solve out mentioned above, this paper presents a decisive method using shunt and series active filter system combined with SMES. Especially, authors analyzed the change of original energy capacity of SMES regarding to the size of resistance caused by quench of superconducting magnetic coil.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.411-418
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• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.