• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.3
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• pp.233-240
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• 2005

In this paper, AC electric vehicle propulsion system(Converter/Inverter) using high power semiconductor, IPM is proposed. 2-Parallel operation of two PWM converter is adopted for increasing capacity of system and the harmonic content is eliminated by the phase shaft between two PWM converters switching phase. VVVF inverter control is used a mixed control algorithm, where the vector control strategy at low speed region and slip-frequency control strategy at high speed region. The proposed propulsion system is verified by experimental results with a 1,350kW converter and 1,100kVA inverter with four 210kW traction motors.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.297-304
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• 2017

The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

• The Transactions of the Korean Institute of Power Electronics
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• v.15 no.3
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• pp.199-206
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• 2010

Matrix converter is an energy conversion device of controlled power semiconductor switches that directly connects the three-phase source to the three-phase load. With no dc-link components for energy storage in the matrix converter the input current depends directly upon the load currents and the switch state of the converter. Therefore the unbalanced and distorted input voltages can result in unwanted output harmonic currents. This paper presents a current compensator based on neural network to improving output current quality for matrix converter under abnormal input voltage conditions. The effectiveness and feasibility of the proposed technique has been proven through numerical simulations and experimental tests.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.354-362
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• 2017

We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of $114{\mu}A$ at -15 V, a breakdown voltage of 794 V.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.2
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• pp.89-96
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• 2000

This paper describes the forward type pulse power supply which is the simple circuit configuration and easy to be managed using a power semiconductor switching device(Power-MOSFET) in the view of commercialization. The maximum value of output pulse voltage of the proposed pulse power supply system can be realized by the variation of phase angle($\phi$) of bridge rectifier circuit and also its pulse period is determined by the duty ratio of Power-MOSFET. The principle of basic operating and the operating characteristics of the forward type pulse power supply are estimated by the switching frequency, the variation of phase angle($\phi$)It is shown that theoretical and experimental results are in good agreement by comparing simulation and experimental results of proposed pulse power supply when a lamp type ozonizer can be used as a load. This proposed pulse power system shows that it can be practically used in the future as a power source system in various fields.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.172-178
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• 2016

In this paper, we propose a sub-10 nm Ge/GaAs heterojunction-based tunneling field-effect transistor (TFET) with vertical band-to-band tunneling (BBT) operation for ultra-low-power (LP) applications. We design a stack structure that is based on the Ge/GaAs heterojunction to realize the vertical BBT operation. The use of vertical BBT operations in devices results in excellent subthreshold characteristics with a reduction in the drain-induced barrier thinning (DIBT) phenomenon. The proposed device with a channel length ($L_{ch}$) of 5 nm exhibits outstanding LP performance with a subthreshold swing (S) of 29.1 mV/dec and an off-state current ($I_{off}$) of $1.12{\times}10^{-11}A/{\mu}m$. In addition, the use of the highk spacer dielectric $HfO_2$ improves the on-state current ($I_{on}$) with an intrinsic delay time (${\tau}$) because of a higher fringing field. We demonstrate a sub-10 nm LP switching device that realizes a good S and lower $I_{off}$ at a lower supply voltage ($V_{DD}$) of 0.2 V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.9
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• pp.685-697
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• 2017

In this paper, it is presented the result of design and fabrication for C-band solid state high power amplifier unit and components using in search radar. The solid state power amplifier(SSPA) assembly was fabricated using GaN(Gallium Nitride), which is semiconductor device, and the transmit signal output power of the solid state high power amplifier unit is generated by combining the transmit signal power of the solid state power amplifier configured in parallel through a design and fabricated waveguide type transmit signal combine assembler. Designed solid state high power amplifier unit demonstrated C-band 500 MHz bandwidth, maximum 10.5% duty cycle, transmit pulse width from $0.0{\mu}s{\sim}000{\mu}s$, and transmit signal power is 44.98 kW(76.53 dBm).

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.111-115
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• 2001

Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strain-relaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content. The fabricated metamorphic HEMT with $0.2\mu\textrm{m}$T-gate and 40% indium content shows the excellent DC and microwave characteristics of $V_{th}-0.65V,{\;}g_{m,max}=620{\;}mS/mm,{\;}f_T120GHZ{\;}and{\;}f_{max}=210GHZ$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.278-285
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• 2012

A digital readout IC for capacitive sensors is presented. Digital capacitance readout circuits suffer from static capacitance of sensors, especially single-ended sensors, and require large passive elements to cancel such DC offset signal. For this reason, to maximize a dynamic range with a small die area, the proposed circuit features digital filters having a coarse and fine compensation steps. Moreover, by employing switched-capacitor circuit for the front-end, correlated double sampling (CDS) technique can be adopted to minimize low-frequency device noise. The proposed circuit targeted 8-kHz signal bandwidth and oversampling ratio (OSR) of 64, thus a $3^{rd}$-order ${\Delta}{\Sigma}$ modulator operating at 1 MH was used for pulse-density-modulated (PDM) output. The proposed IC was designed in a 0.18-${\mu}m$ CMOS mixed-mode process, and occupied $0.86{\times}1.33mm^2$. The measurement results shows suppressed DC power under about -30 dBFS with minimized device flicker noise.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.270-275
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• 2017

Current progress in the development of semiconductor technology in applications involving high electron mobility transistors (HEMT) and power devices is hindered by the lack of adequate ways todissipate heat generated during device operation. Concurrently, electronic devices that use gallium nitride (GaN) substrates do not perform well, because of the poor heat dissipation of the substrate. Suggested alternatives for overcoming these limitations include integration of high thermal conductivity material like diamond near the active device areas. This study will address a critical development in the art of GaN on diamond (GOD) structure by designing for ideal heat dissipation, in order to create apathway with the least thermal resistance and to improve the overall ease of integrating diamond heat spreaders into future electronic devices. This research has been carried out by means of heat transfer simulation, which has been successfully demonstrated by a finite-element method.