Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Suggestion and Design of GaN on Diamond Structure for an Ideal Heat Dissipation Effect and Evaluation of Heat Transfer Simulation as Different Adhesion Layer

이상적인 열방산 효과를 위한 GaN on Diamond 구조의 제안과 접합매개층 종류에 따른 열전달 시뮬레이션 비교

  • Kim, Jong Cheol (Institute of Mechanical Engineering Technology, Kyungpook National University) ;
  • Kim, Chan Il (Institute of Mechanical Engineering Technology, Kyungpook National University) ;
  • Yang, Seung Han (School of Mechanical Engineering, Kyungpook National University)
  • Received : 2017.02.17
  • Accepted : 2017.03.08
  • Published : 2017.05.01
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Abstract

Current progress in the development of semiconductor technology in applications involving high electron mobility transistors (HEMT) and power devices is hindered by the lack of adequate ways todissipate heat generated during device operation. Concurrently, electronic devices that use gallium nitride (GaN) substrates do not perform well, because of the poor heat dissipation of the substrate. Suggested alternatives for overcoming these limitations include integration of high thermal conductivity material like diamond near the active device areas. This study will address a critical development in the art of GaN on diamond (GOD) structure by designing for ideal heat dissipation, in order to create apathway with the least thermal resistance and to improve the overall ease of integrating diamond heat spreaders into future electronic devices. This research has been carried out by means of heat transfer simulation, which has been successfully demonstrated by a finite-element method.

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