• Proceedings of the KIPE Conference
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• 2012.11a
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• pp.67-68
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• 2012

최근 스마트폰 시장은 기하급수적인 성장세를 지속하고 있다. 또한 소비자들의 사용패턴 또한 기존의 음성통화에서 데이터 통신으로 변화되면서 소비전류 및 사용시간이 증대되고 있는 실정이다. 이러한 사용자의 불만을 해소하기 위해서는 배터리의 용량 증대가 필요하나 공간상의 제약으로 인해 한계점에 도달한 상태이다. 따라서 제한된 체적내에서 최대의 용량을 사용하기 위해 배터리팩의 과충전 차단전압은 점차 높아지고 과방전 차단전압은 점차 낮아져서 배터리팩의 가용영역을 확대하고 있는 추세에 있다. 이러한 사용전압영역의 확대는 배터리팩의 안전성 및 수명 등에 악영향을 미치나 배터리의 신소재 개발, 보호회로의 채용 등으로 이러한 단점을 보완하고 있다.

• Journal of the Semiconductor & Display Technology
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• v.2 no.3
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• pp.25-30
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• 2003

In this study, the controller using TMS320LF2407 low voltage DSP for motor control is designed and realized. It has 40 MIPS calculating ability and its driving voltage is 3.3 V for low power. The peripheral elements, however usually use 5 V and they need voltage transfer interface. In this study, voltage transformation and reducing noise are studied and space vector PWM is adopted as a motor control scheme. According to these methods, the efforts for software programming and calculation processes are reduced. In addition, the hardware is also simplified by substituting the current control part with software programming. Through this study, the DSP based servo controller increases its ability for high performance multi-function on semiconductor transportation equipments..

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.106-111
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• 2016

Thermal noise generated in the electrolyte is modeled for the electrolyte-oxide-semiconductor field-effect transistors. Two noise sources contribute to output noise currents. One is the thermal noise generated in the bulk electrolyte region, and the other is the thermal noise from the double-layer region at the electrolyte-oxide interface. By employing two slightly-different equivalent circuits for two noise current sources, the power spectral density of output noise current is calculated. From the modeling and simulated results, the bulk electrolyte thermal noise dominates the double-layer thermal noise. Electrolyte thermal noise are computed for three different concentrations of NaCl electrolyte. The derived formulas give a good agreement with the published experimental data.

• Ceramist
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• v.22 no.4
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• pp.429-451
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• 2019

Quartz glass is a key material for making semiconductor process components because of its purity, low thermal expansion, high UV transmittance and relatively low cost. Domestic quartz glass has a market worth about 500 billion won in 2018, and the market power of Japanese materials is very high. Quartz glass for semiconductor process can be divided into general process and exposure. For general process, molten quartz glass is mainly used, but synthetic quartz glass with higher purity is preferred. Synthetic quartz glass is used as the photomask for the exposure process. Recently, as semiconductors started the sub-nm process, the transition from the transmission type using ArF ultraviolet (194 nm) to the reflection type using EUV ultraviolet (13.5 nm) began. Therefore, the characteristics required for the synthetic quartz glass substrates used so far are also rapidly changing. This article summarizes the current technical trends of quartz glass and recent technical issues. Lastly, the present situation and development possibility of quartz glass technology in Korea were diagnosed.

• Journal of the Korea Safety Management & Science
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• v.8 no.1
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• pp.17-26
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• 2006

Basis frame-work's base in a semiconductor industry have gas, chemical, electricity and various facilities in bring to it. That it is a foundation by fire, power failure, blast, spill of toxicant huge by large size accident human and physical loss and damage because it can bring this efficient, connect with each kind mechanical, physical thing to prevent usefully need that control finding achievement factor of human factor of human action. Large size accident in a semiconductor industry to machine and human and it is involved that present, in system by safety interlock defect of machine is conclusion for error of behaviour. What is not construing in this study, do safety in a semiconductor industry to do improvement. Control human error analyzes in human control with and considers mechanical element and several elements. Also, apply achievement factor using O'conner Model by control method of human error. In analyze by failure mode effect using actuality example.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.112-117
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• 2020

NAND flash memory is a non-volatile memory that retains stored data even without power supply. Internal memory used as a data storage device and solid-state drive (SSD) is used in portable devices such as smartphones and digital cameras. However, NAND flash memory carries the risk of electric shock, which can cause errors during read/write operations, so use error correction codes to ensure reliability. It efficiently recovers bad block information, which is a defect in NAND flash memory. BBT (Bad Block Table) is configured to manage data to increase stability, and as a result of experimenting with the error correction code algorithm, the bit error rate per page unit of 4Mbytes memory was on average 0ppm, and 100ppm without error correction code. Through the error correction code algorithm, data stability and reliability can be improved.

• Journal of the Optical Society of Korea
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• v.16 no.2
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• pp.157-161
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• 2012

This work reports the stability of the resonant characteristics in multimode interferometer coupled square ring semiconductor cavities. Based on the analysis of single square ring cavities, the single mode operations in the multimode interferometer coupled ring cavities are analyzed and the devices are demonstrated on the semiconductor multiple quantum well epitaxial structure. By varying the lasing conditions such as substrate temperature and input pump power, single resonant mode operations are also observed.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.332-333
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• 2018

This paper presents an advanced abnormal over-current protection with $SuperFET^{(R)}$ 800V MOSFET in Flyback converter. In advanced abnormal over-current protection, digital pattern generator is proposed to detect a steep di/dt current condition when secondary rectifier diode or the transformer is shorted. If current sensing signal is larger than current limit during consecutive switching cycle, Gate signal will be stopped for 7 internal switching periods. If the abnormal over-current maintains pattern, the controller goes into protection mode. The Advanced over-current protection has been implemented in a 0.35um BCDMOS process (ON Semiconductor process).

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1204-1207
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• 2009

We investigated the device performance of bulk heterojunction solar cells depending on the active layer thickness. For the systematic comparison, the polymer solar cells comprising RR-P3HT:PCBM (1:0.8 (wt%:wt%)) blend films with different thickness were characterized by impedance spectroscopy, and J-V measurement in dark and solar simulated illumination. The device with 120 nm thickness of active layer exhibited maximum power conversion efficiency of 3.5 % under AM 1.5 100mW/$cm^2$ illumination condition.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.99-102
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• 2006

The electrical characteristics of CMOS inverter with LDMOSFET are studied for high power and digital circuit application by using two dimensional MEDICI simulator. The simulation is done in terms of voltage transfer characteristic and on-off switching properties of CMOS inverter with variation of channel length and channel doping levels. The channel which surrounds a junction-type source in LDMOSFET is considered to be an important parameter to decide a circuit operation of CMOS inverter. The digital logic levels of input voltage show to increase with increase of n-channel length and doping levels while the logic output levels show to the almost constant.