• 전기전자학회논문지
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• 제25권2호
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• pp.350-355
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• 2021

IGBT는 MOSFET과 BJT의 구조를 동시에 포함하고 있는 전력반도체 소자이며, MOSFET의 빠른 스위칭 속도와 BJT의 고 내압, 높은 전류내량 특성을 갖고 있다. GBT는 높은 항복전압, 낮은 V_CE-SAT, 빠른 스위칭 속도, 고 신뢰성의 이상적인 파워 반도체 소자의 요구사항을 목표로 하는 소자이다. 본 논문에서는 1,200V 급 Trench Gate Field Stop IGBT의 상단 공정 파라미터인 Gate oxide thickness, Trench Gate Width, P+ Emitter width를 변화시키면서 변화하는 Eoff, V_CE-SAT을 분석하였고, 이에 따른 최적의 상단 공정 파라미터를 제시하였다. Synopsys T-CAD Simulator를 통해 항복전압 1,470V와 V_CE-SAT 2.17V, Eon 0.361mJ, Eoff 1.152mJ의 전기적 특성을 갖는 IGBT 소자를 구현하였다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2005년도 전력전자학술대회 논문집
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• pp.106-108
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• 2005

High accuracy and stability digital controlled power supply for magnet is developed at PLS. This power supply has three sections. The first section is digital controller including DSP&FPGA and precision ADC, the second section consists of IGBT driver and four quad IGBT switch, and the third section is LC output filter section. AC input voltage of power supply is 3-phase 21V, output current is 0 ${\sim}$ 150 A dc. Switching frequency of four quad IGBT switch is 25 kHz. The output current of power supply has very high accuracy of 100 A step resolution at full range and the stability of +/- 1.5 ppm for short term and +/- 5 ppm for long term. This paper describes characteristics of filter and output current performance improvement after LC output filter at four quad digital power supplies.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권8호
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• pp.415-419
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• 2004

A pulse power supply using IGBTs and MPC (magnetic pulse compression) circuit was developed for a metal vapor laser. The life time of the pulse power supply is expected to be much longer than that of a vacuum tube or thyratron type pulse power supply. A series-connected IGBT array generated a long pulse of its pulse width 2 ${\mu}\textrm{s}$ md then it was compressed to less than 100 ns by a three stage MPC circuit. This pulse power supply was applied to a laser plasma tube of 10 mm inner diameter and 0.5 m discharge length. and successfully operated.

• 설비공학논문집
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• 제30권1호
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• pp.1-9
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• 2018

Thermal performance of a heat sink for an inverter power stack was analyzed in terms of array and installation location of an Insulated Gate Bipolar Transistor (IGBT). Thermal flow around the heat sink was calculated with a numerical model that could simulate forced convection. Thermal performance was calculated depending on the array and location of high- and low-power IGBTs considering the maximum temperature of IGBT. The optimum array and installation location were found and causes were analyzed based on results of numerical analysis. For the numerical analysis, experiment design considered the installation location of IGBT, ratio of heat generation rates of high- and low-power IGBTs, and velocity of the inlet air as design variables. Based on numerical results, a correlation that could calculate thermal performance of the heat sink was suggested and the maximum temperature of the IGBT could be predicted depending on the installation method.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.346-349
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• 1996

In application of high power IGBT PWM inverters, the treatable power range is considerably limited due to the overvoltage caused by the stray inductance components within the power circuit. This paper proposes a new gate drive circuit for IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off and the overvoltage across the opposite IGBT at turn-on while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage is limited much effectively at the larger collector current. The turn-on scheme is to decrease the rising rate of the collector current by increasing input capacitance during turn-on transient when the gate-emitter voltage is greater than threshold voltage. The experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

• 전자공학회지
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• 제35권7호
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• pp.57-71
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• 2008

The last decade has witnessed great improvements in power semiconductor devices thanks to the advanced design and process, which have made it possible to significantly improve the electrical performances of electronic systems while simultaneously reducing their site, weight and perhaps most importantly reducing their cost. Among the power semiconductor devices, IGBT will be a key semiconductor component for power industry since it has a huge potential to cover large areas of power electronics from small home appliances to heavy industries. Currently, only a few limited power semiconductor manufacturers supply most of the industrial consumptions of power IGBT and its modules. Therefore, a large portion of technology in the power industry is dependent on other advanced countries. In this regard, to independently build power IGBT devices and the relevant power module technology, Korean government initiated a new 5-year project 'Power IT,' which also aimed at booming the business of the power semiconductor and the allied industries. With the success of this power IT project, it is expected that the power semiconductor technology will be a basis to foster the high power semiconductor industry and moreover, there will be more innovative developments in the Korea region and globally Also, forming the channel between the customers and suppliers, it is possible to effectively develop the customized power products, which could strengthen the competitiveness of Korean power industry. Furthermore, the power industry including semiconductor manufacturers will be technologically self-supporting and be able to obtain good business opportunities, and eventually increase the share in the growing power semiconductor market, which could be positioned as a major industry in Korea.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2013년도 전력전자학술대회 논문집
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• pp.455-456
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• 2013

모터 가변속 구동장치나 계통연계 전력변환 장치, 무정전 전원장치(UPS)등 스위칭 주파수가 수 ~ 20kHz 정도의 중용량 장치에 IGBT가 주로 사용된다. 최근에는 소용량 가전제품부터 대용량의 전철의 모터 구동장치 등 다양한 전기기기에 IGBT가 사용되고 있다. IGBT의 성능은 게이트 드라이브 회로에 의해 결정되며, 스위칭 특성, 파형 컨트롤과도 밀접한 관련이 있다. 본 논문에서는 IGBT의 안정적인 스위칭 동작에 영향을 끼치는 요인과 Turn-on 시퀀스를 분석하였고 IGBT의 물리적 특성을 고려하여 불안정한 게이트-에미터 전압을 안정화시킬 수 있는 게이트 드라이버의 설계 요소에 대하여 고찰하였다.

• Journal of Power Electronics
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• 제14권6호
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• pp.1272-1280
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• 2014

This paper presents solutions for fault detection and diagnosis of two-level, three phase voltage-source inverter (VSI) topologies with IGBT devices. The proposed solutions combine redundant standby VSI structures and contactors (or relays) to improve the fault-tolerant capabilities of power electronics in applications with safety requirements. The suitable combination of these elements gives the inverter the ability to maintain energy processing in the occurrence of several failure modes, including short-circuit in IGBT devices, thus extending its reliability and availability. A survey of previously developed fault-tolerant VSI structures and several aspects of failure modes, detection and isolation mechanisms within VSI is first discussed. Hardware solutions for the protection of power semiconductors with fault detection and diagnosis mechanisms are then proposed to provide conditions to isolate and replace damaged power devices (or branches) in real time. Experimental results from a prototype are included to validate the proposed solutions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.3-6
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• 2004

반도체 디자인, 공정 기술 및 패기지 기술의 발달에 따라 전력용 반도체는 소형화, 고성능화, 지능화하고 있다. 고속 구동이 용이한 때문에 MOSFET이나 IGBT등의 MOS-gate형 전력 반도체의 발전이 두드려지며, trench, charge balance, NPT 기술등이 패키지 기술과 더불어 이를 위한 주요 기술이 될것으로 보인다. SiC나 GaN등의 Wide Band Gap 물질들을 사용한 차세대 전력 반도체 연구도 활발히 진행되고 있다.

• 전력전자학회논문지
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• 제5권5호
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• pp.515-521
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• 2000

본 논문은 전동차용 추진장치인 IGBT VVVF 인버터의 현차시험에 관한 것이다. IGBT VVVF인버터는 1,650kVA급으로 개발되었다. 추진 인버터의 신뢰성과 성능을 확인하기 위하여 서울시 지하철 6호선에서 본선시험을 하였다. 시험 차량구성은 4M4T로 구성되었으며, 전장품은 4대의 VVVF인버터, 16대의 견인전동기 및 2대의 SIV로 구성하였다. 추진장치는 1C4M으로 구성하였다. 현차시험을 통하여 추진용 인버터의 우수한 가·감속 능력과 가가속도 특성 및 구배에서의 등판능력을 확인 할 수 있었다.