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Thermal Performance of a Heat Sink According to Insulated Gate Bipolar Transistor Array and Installation Location

IGBT 배열과 설치 위치에 따른 히트 싱크 방열 성능

  • Park, Seung-Jae (School of Mechanical Engineering, Hanyang Univeristy) ;
  • Yoon, Youngchan (School of Mechanical Engineering, Hanyang Univeristy) ;
  • Lee, Tae-Hee (Department of Building Technology, Suwon Science College) ;
  • Lee, Kwan-Soo (School of Mechanical Engineering, Hanyang Univeristy)
  • 박승재 (한양대학교 기계공학부) ;
  • 윤영찬 (한양대학교 기계공학부) ;
  • 이태희 (수원과학대학교 건축기계설비과) ;
  • 이관수 (한양대학교 기계공학부)
  • Received : 2017.09.30
  • Accepted : 2017.11.08
  • Published : 2018.01.10

Abstract

Thermal performance of a heat sink for an inverter power stack was analyzed in terms of array and installation location of an Insulated Gate Bipolar Transistor (IGBT). Thermal flow around the heat sink was calculated with a numerical model that could simulate forced convection. Thermal performance was calculated depending on the array and location of high- and low-power IGBTs considering the maximum temperature of IGBT. The optimum array and installation location were found and causes were analyzed based on results of numerical analysis. For the numerical analysis, experiment design considered the installation location of IGBT, ratio of heat generation rates of high- and low-power IGBTs, and velocity of the inlet air as design variables. Based on numerical results, a correlation that could calculate thermal performance of the heat sink was suggested and the maximum temperature of the IGBT could be predicted depending on the installation method.

Keywords

References

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