• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.163-163
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• 2012

We observed strain evolution of P3HT crystals in P3HT:PCBM films and the effect of Al electrode on the evolution during real time annealing process. Based on simple assumptions, both relaxed lattice parameters and thermal expansion coefficient could be quantitatively determined. P3HT:PCBM films displayed tensile strain in as-prepared samples regardless of the presence of an Al layer. In the absence of Al layer, P3HT crystals showed only strain relaxation at an annealing temperature of $180^{\circ}C$. Meanwhile In the presence of an Al layer, the strain was relaxed and changed to compressive strain at around 120C annealing temperature, which indicated a tightening of the thiophene ring packing. These behaviors support the improved performance of devices fabricated by post annealing process.

• Korean Journal of Materials Research
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• v.34 no.2
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• pp.79-84
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• 2024

Thin films of yttria-stabilized zirconia (YSZ) nanoparticles were prepared using a low-temperature deposition and crystallization process involving successive ionic layer adsorption and reaction (SILAR) or SILAR-Air spray Plus (SILAR-A+) methods, coupled with hydrothermal (175 ℃) and furnace (500 ℃) post-annealing. The annealed YSZ films resulted in crystalline products, and their phases of monoclinic, tetragonal, and cubic were categorized through X-ray diffraction analysis. The morphologies of the as-prepared films, fabricated by SILAR and SILAR-A+ processes, including hydrothermal dehydration and annealing, were characterized by the degree of surface cracking using scanning electron microscopy images. Additionally, the thicknesses of the YSZ thin films were compared by removing diffusion layers such as spectator anions and water accumulated during the air spray plus process. Crack-free YSZ thin films were successfully fabricated on glass substrates using the SILAR-A+ method, followed by hydrothermal and furnace annealing, making them suitable for application in solid oxide fuel cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.631-636
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• 2017

The degradation mechanism of $Mo_xW_{1-x}Si_2$ ultrahigh-temperature heating elements fabricated by self-propagating high-temperature synthesiswas investigated. The $Mo_xW_{1-x}Si_2$ specimens (with and without post-annealing) were subjected to ADTs (accelerated degradation tests) at temperatures up to $1,700^{\circ}C$ at heating rates of 3, 4, 5, 7, and $14^{\circ}C/min$. The surface loads of all the specimen heaters were increased with the increase in the target temperature. For the $Mo_xW_{1-x}Si_2$ specimens without annealing, many pores and secondary-phase particles were observed in the microstructure; the surface load increased to $23.9W/cm^2$ at $1,700^{\circ}C$, while the bending strength drastically reduced to 242 MPa. In contrast, the $Mo_xW_{1-x}Si_2$ specimens after post-annealing retained $single-Mo_xW_{1-x}Si_2$ phases and showed superior durability after the ADT. Consequently, it is thought that the formation of microcracks and coarse secondary phases during the ADT are the main causes for the degraded performance of the $Mo_xW_{1-x}Si_2$ heating elements without post-annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.203-203
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• 2015

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nano-belts, and nano-dots. In contrast to typical vapor-liquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nano-structures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 nanowires (NWs) were synthesized by using radio-frequency magnetron sputtering method. The NWs were then coated by Au thin films and annealed under Ar or N2 gas enviroment with no supply of Gallium and Oxygen source. Several samples were prepared with varying the post annealing parameters such as gas environment annealing time, annealing temperature. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of branched Ga2O3 NWs will be reported.

• Journal of Ceramic Processing Research
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• v.20 no.4
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• pp.388-394
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• 2019

In this study, high-purity single-walled carbon nanotubes (SWCNTs) were prepared by removing the unreacted metal constituents and amorphous carbon impurities using a post-annealing process. Unlike conventional thermal processing techniques, this technique involved different gas atmospheres for efficient removal of impurities. A heat treatment was conducted in the presence of chlorine, oxygen, and chlorine + oxygen gases. The nanotubes demonstrated the best characteristics, when the heat treatment was conducted in the presence of a mixture of chlorine and oxygen gases. The scanning electron microscopy, transmission electron microscopy, ultraviolet absorbance, and sheet resistance measurements showed that the heat treatment process efficiently removed the unreacted metal and amorphous carbon impurities from the as-synthesized SWCNTs. The high-purity SWCNTs exhibited improved electrical conductivities. Such high-purity SWCNTs can be used in various carbon composites for improving the sensitivity of gas sensors.

• Composites Research
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• v.26 no.2
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• pp.123-128
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• 2013

The PVDF (polyvinylidene fluoride) fibers were prepared using the wet spinning processing. To improve ${\beta}$-phase crystalline which closely related piezoelectric property PVDF wet spun fibers conducted post treatment. Post treatment is consisted of heat stretching and annealing process. The heat stretching and annealing conditions were controlled by changing temperature between glass transition temperature and melting temperature. From these experimental data, the resulting crystal structure of the ${\beta}$-phase crystalline was confirmed by FT-IR and XRD experiments. From these analysis results, optimum stretching and annealing conditions of the wet spun PVDF fibers were founded to increase high ${\beta}$-phase crystalline. Furthermore results showed that thermal processing had a direct effect on modifying the crystalline microstructure and also confirmed that heat stretching and annealing could increase the degree of crystallinity and ${\beta}$-phase crystalline. Finally, piezoelectric constant ($d_{11}$) of the post heat treated PVDF fibers reinforced composite were measured to investigate the feasibility for the sensing materials.

• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.96-100
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• 2017

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been extensively studied as the active material in ammonia gas sensor because of its fast response time, high conductivity and environmental stability. It is well known that a post annealing process for organic devices based on PEDOT:PSS significantly increases the device performance. In this study, we propose the solvent annealing of PEDOT:PSS and investigated its effects. As a results, post solvent annealing on PEDOT:PSS lead to the surface chemical and physical properties change. These changes result in improved conductivity of the PEDOT:PSS. In additional, ammonia sensitivity of solvent annealed PEDOT:PSS become higher than pristine polymer film. The enhancement is mainly caused by the depletion of gas barrier PSS and structural re-forming PEDOT networks. We believe that the post solvent annealing is a promising method to achieve highly sensitivity PEDOT:PSS films for applications in efficient, low-cost and flexible ammonia gas sensor.

• Proceedings of the Korean Vacuum Society Conference
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• 1992.02a
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• pp.93-94
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• 1992

2X1018 ions/cmz at 180 keV and post-implantation annealing at 12500C for 6 hours in nitrogen ambient. The oxygen redistribution process during post-implantation annealing was examined by AES and TEM. The electrical property of the structure was investigated by SRP method. We could find oxygen precipitates in SOl layer after high temperature annealing. The influence of the precipitates to the electrical property of the SOl layer was discussed. And the Iimiting factor to the decrease of the precipi tates during post-implantation anneal ing was discussed also.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1483-1484
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• 2000

Dielectric thin films of PLT(Pb(La.Ti)O3) for the application of highly integrated memory devices have been deposited on Pt/Ti/SiO2/Si substrates in situ by pulsed laser deposition(PLD). We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. Both in-situ annealing and ex-situ annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)$O_3$ films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.567-571
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• 2009

Polycrystalline ZnO and Ga doped ZnO (GZO) films are deposited on glass substrate by RF magnetron sputtering at room temperature. The characteristics of ZnO and GZO films are investigated with X-ray diffraction measurement, UV-VIS-NIR spectrophotometer $(250{\sim}1200nm)$ and hall measurement. The post-growth thermal treatment of these films is carried out in N2 ambient at $500^{\circ}C$ for 30 min and an hour. ZnO and GZO films have different changing behavior of structural and optical properties by annealing. To use transparent conductive films for solar cell, films should have not only high transmittance but also good electrical property. Although as deposited GZO films have electrical properties than ZnO films, GZO films have not good transmittance properties. Consequently, we succeed that the high transmittance of GZO films is improved by annealing process.