• Structural Engineering and Mechanics
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• v.6 no.2
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• pp.185-200
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• 1998

Space truss design usually involves two main assumptions: that truss members are pin-ended, and compression members possess brittle post-buckling characteristics. The validity of these assumptions in the design of a new group of space trusses with continuous chords and eccentric joints is questionable. With chord member continuity and the consequent improvement in compression member behaviour, current design practice might be too conservative. In this paper, it is shown that substantial improvements in overall truss strength have resulted when the true member end conditions are considered, thus indicating potential savings in truss weight with considerable magnitudes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.7-8
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• 2006

The effects of heat treatment on the electrical properties of SGOI were examined. We proposed the optimized heat treatments for improving the interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA(rapid thermal annealing) before gate oxidation and post-RTA after dopant activation, the driving current, the transconductance, and the leakage current were improved significantly.

• Journal of Forest and Environmental Science
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• v.30 no.4
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• pp.393-404
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• 2014

With consideration of proximate and intricate relationships among rural livelihood, farm land and forestry; this paper examined impact of land tenure reform on local peoples' forest dependency by taking Ethiopia as case study. The post 1975 major land tenure reform and associated activities such as land distribution and forest demarcation were found to be short of minimizing pressure on the forest as has been evidenced by percentage of new households established inside the forest and current level of dependency on the forest. With most of recently established households all making up the poor and very poor categories, together with overall of household composition which is dominated by dependent members coupled by current land tenure system that tie farmers with their land, future dependency on the already diminished forest seems to increase unabated. Reconsidering the existing land tenure system backed by policy for livelihood diversification, improvement in rural education and awareness on demographic issues can minimize future dependency on the forest.

• The Journal of Pediatrics of Korean Medicine
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• v.28 no.4
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• pp.157-165
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• 2014

Objectives Purpose of this study is to investigate the current usage of Ha-Taedok Method in postpartum women. Methods 36 questionnaires were statistically analyzed by using PASW Statistics 18. Results Only 2 women knew Ha-Taedok Method (5.6%). Women tend not to use Ha-Taedok Method because their children were too young to take herbal medicine (27.8%). However, when being educated about Ha-Taedok Method, they were more likely to take this method than before (13.2%${\rightarrow}$75%). Conclusions The utilization of Ha-Taedok Method will improve up on educating post-partum women.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.44-50
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• 1993

In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9${\times}10^{8}\;A/cm^{2}$ respectively in these films whose thickness was about 180.angs.. With annealing at rectangular waveguides with a slant grid are investigated here. In particular, 900.deg. C in oxygen ambient for 100 minutes, breakdown field and leakage current density were improved to be 4.8 MV/cm and 1.61.6${\times}10^{8}\;A/cm^{2}$ respectively. It turned out that the electrical characteristics could also be improved by oxygen plasma post-treatment and the conduction mechanism at high electric field proved to be Schottky emission in these double-layered films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.399-402
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• 2007

The effects of heat treatment on the electrical properties of strained-Si/SiGe-on-insulator (SGOI) devices were examined. We proposed the optimized heat treatment processes for improving the back interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA (rapid thermal annealing) before gate oxidation step and the post-RTA after source/drain dopant activation step, the electrical properties of strained-Si channel on $Si_{1-x}Ge_x$ layer were greatly improved, which resulting the improvement of the driving current, transconductance, and leakage current of SGOI-MOSFET.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.316-319
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• 2017

A new approach to improving the electrical characteristics and optical response of a polysilicon-based metal-semiconductor-metal (MSM) photodetector is proposed. To understand the cause of current restriction in the MSM photodetector, modified trap mechanisms are suggested, which include interfacial electron traps at the metal/polysilicon interface and silicon dangling bonds between silicon crystallite grains. Those traps were passivated using hydrogen ion implantation with subsequent post-annealing. Photodetectors that were ion-implanted under optima conditions exhibited improved photoconductivity and reduced dark current instability, implying that the hydrogen bonds in the polysilicon influence the simultaneous decreases in the density of dangling bonds at grain boundaries and the trapped positive charges at the contact interface.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1670-1674
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• 1998

Now and then there are many electrical accidents between cable and line post insulator which is degraded by long time using, causing leakage current on the surface of insulator. In this paper it is denied that the 22.9 KV-y distribution lines are protected by binding cover which is needed from fog or rainy moisture, surges occurring by swiching or lightening pulse. It is analyzed to investgate the unballanced transfer characteristics and reflection coefficient by using bidding cover and non-cover. It was tested the radio interference voltage in the test room. In the factory it was tested the amount of leakage current causing on the surface of insulator in the state of no load and 70(%) load.

• Earthquakes and Structures
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• v.6 no.3
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• pp.317-334
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• 2014

The work is concerned with an investigation of the advantages stemming from the use of lightweight aggregate concrete in earthquake-resistant reinforced concrete construction. As the aseismic clauses of current codes make no reference to lightweight aggregate concrete beams made of lightweight aggregate concrete but designed in accordance with the code specifications for normal weight aggregate concrete, together with beams made from the latter material, are tested under load mimicking seismic action. The results obtained show that beam behaviour is essentially independent of the design method adopted, with the use of lightweight aggregate concrete being found to slightly improve the post-peak structural behaviour. When considering the significant reduction in deadweight resulting from the use of lightweight aggregate concrete, the results demonstrate that the use of this material will lead to significant savings without compromising the structural performance requirements of current codes.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.124-127
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• 2004

W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.