• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.27-31
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• 2002

Thin film diode with reliable interfacial structure was fabricated by using multi-step anodic oxidation. The thickness of the oxide layer was preciously controlled with anodic voltage. Also, interfacial structure between oxide layer and top electrode was improved by applying post heat-treatment. The thin film diode showed symmetric and stable I-V characteristics after the post heat-treatment.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.180-184
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• 2002

In this paper, the electrical properties of PVD Ta and $TaN_x$ gate electrodes on $SiO_2$ and their thermal stabilities are investigated. The results show that the work functions of $TaN_x$ gate electrode are modified by the amount of N, which is controlled by the flow rate of $N_2$during reactive sputtering process. The thermal stability of Ta and $TaN_x$ with RTO-grown $SiO_2$ gate dielectrics is examined by changes in equivalent oxide thickness (EOT), flat-band voltage ($V_{FB}$), and leakage current after post-metallization anneal at high temperature in $N_2$ambient. For a Ta gate electrode, the observed decrease in EOT and leakage current is due to the formation of a Ta-incorporated high-K layer during the high temperature annealing. Less change in EOT and leakage current is observed for $TaN_x$ gate electrode. It is also shown that the frequency dispersion and hysteresis of high frequency CV curves are improved significantly by a post-metallization anneal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.329-332
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• 1999

In this paper, BST((Bao.&o,dTi0:3) thin films were deposited by the rf magnetron sputtering method on Pt/$SiO_2$/Si substrate. Pt, $RuO_2$, Ag, Cu films for the formation of top electrode were deposited on BST thm films. And then Top Electrodes/BST/Pt capacitors were annealed with rapid thermal annealing(RTA) at various temperature. We have investigated effect of post-annealing on the electrical properties such as dielectric constant and leakage current of the capacitors. It was found that electrical properties of the capacitors were greatly depended on the annealing temperatures as well as the materials of top electrodes. In BST thin films with Pt top electrode was annealed at $700^{\circ}C$. the dielectric constant was measured to the value of 346 at l[kHzl and the leakage current was obtained to the value of $8.76\times10^8$[A/$\textrm{cm}^2$] at the forward bias of 2[V].

• Transactions of the Korean hydrogen and new energy society
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• v.32 no.4
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• pp.256-262
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• 2021

A carbon felt electrode was prepared using ozone and ammonia sequential treatment and applied as an electrode for a vanadium redox flow battery (VRFB). The physical and electrochemical analyses demonstrate that the oxygen groups facilitate nitrogen doping in the carbon felt. Carbon felt (J5O3+NH3), which was subjected to ammonia heat treatment after ozone treatment, showed higher oxygen and nitrogen contents than carbon felt (J5NH3+O3), which was subjected to ammonia heat treatment first and then ozone treatment. From the charging/discharging of VRFB, the J5O3+NH3 carbon felt electrode showed 14.4 Ah/L discharge capacity at a current density of 150 mA /cm², which was 15% and 33% higher than that of J5NH3+O3 and non-activated carbon felt (J5), respectively. These results show that ozone and ammonia sequential treatment is an effective carbon felt activation method to increase the performance of the vanadium redox flow battery.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.32-35
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• 2002

In this work, we test electrode material of TFD (Thin Film Diode) device subject to flexible substrate. Al, that is ductile metal, was proper for flexible electrode to fabricate flexible display. The fabricated devices had symmetric electrode structure on both sides of insulation layer. The electrode was made of ductile Al so as to reduce the mismatch of properties between the electrode and substrate. The TFD device was successfully fabricated applying our own etch-free process. Electrical properties were improved by post-annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.364-368
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• 1997

We have investigated Pt and RuO$_2$as a bottom electrode for a device application of PZT thin film. The bottom electrodes were prepared by using an RF magnetron sputtering method. We studied some of the property influencing factors such as substrate temperature, gas flow rate, and RF power. An oxygen partial pressure from 0 to 50% was investigated. The results show that only Ru metal was grown without supp1ying any O$_2$gas. Both Ru and RuO$_2$phases were formed for O$_2$partial pressure between 10∼40%. A Pure RuO$_2$ phase was obtained with O$_2$partial pressure of 50%. A substrate temperature from room temperature to 400$^{\circ}C$ was investigated with XRD for the film crystallinity examination. The substrate temperature influenced the surface morphology and the resistivity of Pt and RuO$_2$as well as the film crystal structure. From the various considerations, we recommend the substrate temperature of 300$^{\circ}C$ for the bottom electrode growth. Because PZT film growth on top of bottom electrode requires a temperature process higher than 500$^{\circ}C$, bottom electrode properties were investigated as a function of post anneal temperature. As post anneal temperature was increased, the resistivity of Pt and RuO$_2$was decreased. However, almost no change was observed in resistivity for an anneal temperature higher than 700$^{\circ}C$. From the studies on resistivity and surface morphology, we recommend a post anneal temperature less than 600$^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.945-952
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• 1998

Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.

• Journal of International Academy of Physical Therapy Research
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• v.5 no.2
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• pp.718-722
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• 2014

The cerebellum is known to control balance, equilibrium, and muscle tone. If the cerebellum becomes damaged, the body is unable to retain its balancing functions or involuntary muscle movement. This is why, in stroke patients, there is a high risk of functional disability, as well as a myriad of other disabilities secondary to stroke. Ischemia was induced in SD mice by occluding the common carotid artery for 5 minutes, after which blood was reperfused. Needle electrode electrical stimulation(NEES) was applied to acupuncture points, at 12, 24, and 48 hours post-ischemia on the joksamri. Protein expression was investigated through caspase-3 antibody immuno-reactive cells in the cerebral nerve cells and Western blotting. The results were as follows: The number of caspase-3 reactive cells in the corpus cerebellum 12 and 24 hours post-ischemia was significantly (p<.05) smaller in the NEES group compared to the GI group. caspase-3 expression 12 and 24 hours post-ischemia was significantly(p<.05) smaller in the NEES group compared to the GI group. Based on these results, NEES seems to have a significant effect on Caspase-3 in the cerebellum in an ischemic state at 12 and 24 hours post ischemia, NEES delays the occurrence of early stage apoptosis-inducing Caspase-3, delaying and inhibiting apoptosis. Further systematic studies will have to be conducted in relation to the application of this study's results on stroke patients.

• Journal of International Academy of Physical Therapy Research
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• v.3 no.2
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• pp.429-434
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• 2012

Ischemia, the leading cause of strokes, is known to be deeply related to synaptic plasticity and apoptosis in tissue damage due to ischemic conditions or trauma. The purpose of this study was to research the effects of NEES(needle electrode electrical stimulation) in brain cells of ischemia-induced rat, more specifically the effects of Poly[ADP-ribose] polymerase(PARP) on the corpus striatum. Ischemia was induced in SD mice by occluding the common carotid artery for 5 minutes, after which blood was re-perfused. NEES was applied to acupuncture points, at 12, 24, and 48 hours post-ischemia on the joksamri, and at 24 hours post-ischemia on the hapgok. Protein expression was investigated through PARP antibody immuno-reactive cells in the cerebral nerve cells and western blotting. The number of PARP reactive cells in the corpus striatum 24 hours post-ischemia was significantly(p<.05) smaller in the NEES group compared to the global ischemia(GI) group. PARP expression 24 hours post-ischemia was very significantly smaller in the NEES group compared to the GI group. Results show that ischemia increases PARP expression and stimulates necrosis, making it a leading cause of death of nerve cells. NEES can decrease protein expression related to cell death, protecting neurons and preventing neuronal apoptosis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.202-203
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• 2007

Ferroelectric SBT($SrBi_2Ta_2O_9$) thin films were deposited on Pt/Ti/$SiO_2$/Si substrate using R.F. magnetron sputtering method. The ferroelectric and electric characteristics were investigated with various post-annealing of Pt at $200{\sim}600^{\circ}C$. Compared with SBT thin film which had not post-annealed, the electrical properties and crystallizations of the SBT thin films were relatively improved by the post-annealing of Pt bottom electrode. The crystallization were characterized by X-ray diffraction (XRD). The electrical properties characteristics were observed by HP 4192A and precision LC.