• Convergence Security Journal
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• v.12 no.3
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• pp.19-26
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• 2012

In this study, software products developed in the course of testing, software managers in the process of testing software and tools for effective learning effects perspective has been studied using the NHPP software. The log type hazard function applied to distribution was based on finite failure NHPP. Software error detection techniques known in advance, but influencing factors for considering the errors found automatically and learning factors, by prior experience, to find precisely the error factor setting up the testing manager are presented comparing the problem. As a result, the learning factor is greater than autonomous errors-detected factor that is generally efficient model could be confirmed. This paper, a failure data analysis of applying using time between failures and parameter estimation using maximum likelihood estimation method, after the efficiency of the data through trend analysis model selection were efficient using the mean square error and $R^2$(coefficient of determination).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.4B
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• pp.162-169
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• 2005

Network traffic measurements show that the data traffic on packet switched networks has the self-similar features which is different from the traditional traffic models such as Poisson distribution or Markovian process model. Most of the call admission control researches have been done on the performance analysis of a single network switch. It is necessary to consider the performance analysis of the proposed admission control scheme under interconnected switch environment because the data traffic transmits through switches in networks. From the simulation results, it is shown that the call admission control scheme may not operate properly on the interconnected switch even though the scheme works well on a single switch. In this parer, we analyze the cell loss probability, utilization and self-similarity of output ports of the interconnected networks switch by using shared buffer memory management schemes and propose the new call admission control scheme considering the interconnected network switches under self-similar traffic environments.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2183-2188
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.

• KIPS Transactions on Computer and Communication Systems
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• v.1 no.2
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• pp.109-118
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• 2012

As a result of the prevalence of smartphone, various mobile services became faster by LTE networks. Because many mobile devices are used more wireless services, heavy signaling traffic for authentication could be generated. Authentication is an important factor in wireless networks to identify devices; it is the start of wireless networks. This paper analyzes previous patterns for more effective authentication in accessing of another external networks. We propose a fast authentication scheme for minimizing of signaling cost between the authentication server and external networks. And we calculate the rate of authentication occurrence in LTE networks using mathematical modeling as well as the change of signaling cost for authentication in various network environments. Finally, we calculate the optimized number of authentication data and show the effectiveness for authentication signaling costs.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.44 no.1
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• pp.1-11
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• 2016

The information about the deformations of high-aspect-ratio wings is needed for the real-time monitoring of structural responses. Wing deformation in flight can be predicted by using relationship between the curvatures and the strains on the wing skin. It is also necessary to consider geometric nonlinearity when the large deformation of wing is occurred. The strain distribution on fixed-end is complex in the chordwise direction because of the geometric shape of fixed-wings on fuselages. Hence, the wing displacement can be diversely predicted by the location of the strain sensing lines in the chordwise direction. We conducted a study about prediction method of displacements regardless of the chordwise strain sensing locations. To correct spanwise strains, the ratio of spanwise strain to chordwise strain, Poisson's ratio, and the ratio of the plate strain to the beam strain were used. The predicted displacements using the strain correction were consistent with those calculated by the FEA and verified through the bending testing.

• Industrial Engineering and Management Systems
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• v.4 no.1
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• pp.75-81
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• 2005

Borror et al. discussed the EWMA(Exponentially Weighted Moving Average) chart to monitor the count of defects which follows the Poisson distribution, referred to the $EWMA_c$ chart, as an alternative Shewhart c chart. In the $EWMA_c$ chart, the Markov chain approach is used to calculate the ARL (Average Run Length). On the other hand, in order to monitor the process fraction defectives P in high-yield processes, Xie et al. presented the CCC(Cumulative Count of Conforming)-r chart of which quality characteristic is the cumulative count of conforming item inspected until observing $r({\geq}2)$ nonconforming items. Furthermore, Ohta and Kusukawa presented the $CS(Confirmation Sample)_{CCC-r}$ chart as an alternative of the CCC-r chart. As a more superior chart in high-yield processes, in this paper we present an $EWMA_{CCC-r}$ chart to detect more sensitively small or moderate shifts in P than the $CS_{CCC-r}$ chart. The proposed $EWMA_{CCC-r}$ chart can be constructed by applying the designing method of the $EWMA_C$ chart to the CCC-r chart. ANOS(Average Number of Observations to Signal) of the proposed chart is compared with that of the $CS_{CCC-r}$ chart through computer simulation. It is demonstrated from numerical examples that the performance of proposed chart is more superior to the $CS_{CCC-r}$ chart.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.156-162
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• 2015

This paper has analyzed how conduction path and electron concentration for the device parameters such as oxide thickness, channel doping, and top and bottom gate voltage influence on subthreshold swing of asymmetric double gate MOSFET. Compared with symmetric and asymmetric double gate MOSFET, asymmetric double gate MOSFET has the advantage that the factors to be able to control the short channel effects increase since top and bottom gate oxide thickness and voltages can be set differently. Therefore the conduction path and electron concentration for top and bottom gate oxide thickness and voltages are investigated, and it is found the optimum conditions that the degradation of subthreshold swing, severe short channel effects, can reduce. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation. As a result, conduction path and electron concentration are greatly changed for device parameters, and subthreshold swing is influenced by conduction path and electron concentration of top and bottom.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1196-1202
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• 2013

This paper have analyzed the change of breakdown voltage for channel doping concentration and device parameters of double gate(DG) MOSFET using two dimensional potential model. The low breakdown voltage becomes the obstacle of power device operation, and breakdown voltage decreases seriously by the short channel effects derived from scaled down device in the case of DGMOSFET. The two dimensional analytical potential distribution derived from Poisson's equation have been used to analyze the breakdown voltage for device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. Resultly, we could observe the breakdown voltage has greatly influenced on device dimensional parameters as well as channel doping concentration, especially the shape of Gaussian function used as channel doping concentration.

• Structural Engineering and Mechanics
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• v.71 no.6
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• pp.627-641
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• 2019

The paper focuses on bending analysis of the functionally graded (FG) plates with arbitrary shapes and boundary conditions. The material property of FG plates is modelled by using the power law distribution. Based on the first order shear deformation plate theory (FSDT), the governing equations as well as boundary conditions are formulated and obtained by using the principle of virtual work. The coupled Boundary Element-Radial Basis Function (BE-RBF) method is established to solve the complex FG plates. The proposed methodology is developed by applying the concept of the analog equation method (AEM). According to the AEM, the original governing differential equations are replaced by three Poisson equations with fictitious sources under the same boundary conditions. Then, the fictitious sources are established by the application of a technique based on the boundary element method and approximated by using the radial basis functions. The solution of the actual problem is attained from the known integral representations of the potential problem. Therefore, the kernels of the boundary integral equations are conveniently evaluated and readily determined, so that the complex FG plates can be easily computed. The reliability of the proposed method is evaluated by comparing the present results with those from analytical solutions. The effects of the power index, the length to thickness ratio and the modulus ratio on the bending responses are investigated. Finally, many interesting features and results obtained from the analysis of the FG plates with arbitrary shapes and boundary conditions are demonstrated.

• Journal of IKEEE
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• v.23 no.1
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• pp.29-34
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• 2019

We investigated on-off voltage ${\Delta}V_{on-off}$ of sub-10 nm JLCSG (Junctionless Cylindrical Surrounding Gate) MOSFET. The gate voltage was defined as ON voltage for the subthreshold current of $10^{-7}A$ and OFF voltage for the subthreshold current of $10^{-12}A$, and the difference between ON and OFF voltage was obtained. Since the tunneling current was not negligible at 10 nm or less, we observe the change of ${\Delta}V_{on-off}$ depending on the presence or absence of the tunneling current. For this purpose, the potential distribution in the channel was calculated using the Poisson equation and the tunneling current was calculated using the WKB approximation. As a result, it was found that ${\Delta}V_{on-off}$ was increased due to the tunneling current in JLCSG MOSFETs below 10 nm. Especially, it increased rapidly with channel lengths less than 8 nm and increased with increasing channel radius and oxide thickness.