• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.72-72
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• 2001

Plasma polymerized thin films have been deposited on Si(lOO) substrates at $25-400^{\circ}C$ using thiophene ($C_4H_4S$) precursor by plasma assisted chemical vapor deposition (PACVD) method for low-dielectric device application. In order to compare physical properties of the as-grown thin films, the effects of the plasma power, gas flow ratio and deposition temperature on the dielectric constant and thermal stability were mainly studied. XRD and TED studies revealed that the as-grown thin films have highly oriented amorphous polymer structure. XPS data showed that the polymerized thin films that grown under different RF power and deposition temperature as well as different gas ratio of $Ar:H_2$ have different stoichiometric ratio of C and S compared with that of monomer, indicating a formation of mixture polymers. Moreover, we also realized that oxygen free and thermally stable polymer thin films could be grown at even $400^{\circ}C$. The results of SEM, AFM and TEM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current were obtained to be about 3.22 and $10-11{\;}A/\textrm{cm}^2$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.88-88
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• 2007

• 한국전기화학회:학술대회논문집
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• 2001.10a
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• pp.19-19
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.101-101
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.126-126
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.187-187
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• 2006

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.258-258
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.79-79
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• 2012

A high temperature and a low temperature plasma process technologies were developed and demonstrated for synthesis, hybrid formation, surface treatment and CVD engineering of nano powder. RF thermal plasma is used for synthesis of spherical nano particles in a diameter ranged from 10 nm to 100 nm. A variety of nano particules such as Si, Ni, has been synthesized. The diameter of the nano-particles can be controlled by RF plasma power, pressure, gas flow rate and raw material feed rate. A modified RF thermal plasma also produces nano hybrid materials with graphene. Hemispherical nano-materials such as Ag, Ni, Si, SiO2, Al2O3, size ranged from 30 to 100 nm, has been grown on graphene nanoplatelet surface. The coverage ranged from 0.1 to 0.7 has been achieved uniformly over the graphene surface. Low temperature AC plasma is developed for surface modification of nano-powder. In order to have a three dimensional and lengthy plasma treatment, a spiral type of reactor has been developed. A similar plasma reactor has been modfied for nano plasma CVD process. The reactor can be heated with halogen lamp.

• Macromolecular Research
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• v.12 no.1
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• pp.134-140
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• 2004

Semi-crystalline poly(ethylene terephthalate) (PET) film surfaces were modified with argon and oxygen plasmas by radio-frequency (RF) glow discharge at 240 mTorr/40 W; the changes in topography and surface structure were investigated by atomic force microscopy (AFM) in conjunction with specular reflectance of infrared microspectroscopy (IMS). Under our operating conditions, analysis of the AFM images revealed that longer plasma treatment results in significant ablation on the film surface with increasing roughness, regardless of the kind of plasma used. The basic topographies, however, were different depending upon the kind of gas used. The specular reflectance analysis showed that the ablative mechanisms of the argon and oxygen plasma treatments are entirely different with one another. For the Ar-plasma-treated PET surface, no observable difference in the chemical structure was observed before and after plasma treatment. On the other hand, the oxygen-plasma-treated PET surface displays a significant decrease in the number of aliphatic C-H groups. We conclude that a constant removal of material from the PET surface occurs when using the Ar-plasma, whereas preferential etching of aliphatic C-H groups, with respect to, e.g. , carbonyl and ether groups, occurs upon oxygen plasma.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.206-213
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• 2003

Effects of plasma nitriding on the surface characteristics of tool steels have been investigated using wear tester, micro-hardness tester and scanning electron microscope (SEM) Commercial SKD 11 and SM45 alloy were used as specimens and were plasma nitrided using a plasma nitriding equipment for 5 hr and 10hr at $500^{\circ}C$. Microstructure and phase analysis were performed using SEM and XRD. It was found that plasma nitriding for lour at $500^{\circ}C$, compared with plasma nitriding for 10hr at $500^{\circ}C$, had a thick nitrided layer and produced a layer with good wear resistance and hardness as nitriding time increased. SKD11 alloy showed that wear resistance and hardness decreased, whereas surface roughness increased, compared with SM45 alloy.