• International journal of advanced smart convergence
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• v.6 no.3
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• pp.59-64
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• 2017

A wireless sensor network is a network in which nodes equipped with sensors capable of collecting data from the real world are configured wirelessly. Because the sensor nodes are configured wirelessly, they have limited power such as batteries. If the battery of the sensor node is exhausted, the node is no longer usable. If more than a certain number of nodes die, the network will not function. There are many wireless sensor network protocols to improve energy efficiency, among which LEACH Protocol is a typical example. The LEACH protocol is a cluster-based protocol that divides sensor space into clusters and transmits and receives data between nodes. Therefore, depending on how the cluster is structured, the shape of the energy cow may decrease or increase. We compare the network lifetimes of the existing LEACH protocols and the three types of protocols that have been improved using fuzzy methods for cluster selection.

• Carbon letters
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• v.27
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• pp.50-63
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• 2018

An imprinted potentiometric sensor was developed for direct and selective determination of gabapentin. Sensor is based on carbon paste electrode adapted by graphene oxide that is decorated with silver nanoparticles and mixed with molecularly imprinted polymers nanoparticles using gabapentin as a template molecule. The synthesized nanoparticles were characterized by Fourier transmission infrared spectroscopy, transmission electron microscopy and X-ray diffraction. Under optimal experimental conditions, the studied sensor exhibited high selectivity and sensitivity with LOD of $4.8{\times}10^{-11}mol\;L^{-1}$. It provided a wide linearity range from $1{\times}10^{-10}$ to $1{\times}10^{-3}mol\;L^{-1}$ and high stability for more than 3 mo. The sensor was effectively used for the determination of gabapentin in pharmaceutical tablets and spiked plasma samples.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.216-220
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• 2013

The etching characteristics of indium zinc oxide (IZO) in $Cl_2/Ar$ plasma were investigated, including the etch rate and selectivity of IZO. The IZO etch rate showed non-monotonic behavior with increasing $Cl_2$ fraction in the $Cl_2/Ar$ plasma, and with increasing source power, bias power, and process pressure. In the $Cl_2/Ar$ (75:25%) gas mixture, a maximum IZO etch rate of 87.6 nm/min and etch selectivity of 1.09 for IZO to $SiO_2$ were obtained. Owing to the relatively low volatility of the by-products formation, ion bombardment was required, in addition to physical sputtering, to obtain high IZO etch rates. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. These data suggested that the IZO etch mechanism was ion-enhanced chemical etching.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.49-54
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• 2014

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.67-70
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• 2013

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

• Proceedings of the KSME Conference
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• 2001.11a
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• pp.791-796
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• 2001

Welding using lasers can be mass-produced in high speed. In the laser welding, performing real-time evaluation of the welding quality is very important in enhancing the efficiency of welding. In this study, the plasma and molten metal which are generated during laser welding were measured using the UV sensor and IR sensor. The results of laser welding were classified into five categories such as optimal heat input, little low heat input, low heat input, focus off, and nozzle change. Also, a system was formulated which uses the measured signals with a fuzzy pattern recognition method which is used to perform real-time evaluation of the welding quality and the defects which can occur in laser welding. Weld quality prediction program was developed using previous weld results and statistical program which could show the trend of weld quality and signal was developed.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.214-217
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• 2022

The effect of inductively coupled plasma (ICP) treatment with O₂ gas on the surface properties of poly(ether sulfone) (PES) was investigated. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical characteristics of the O₂ plasma-treated PES films. The surface roughness of the pristine and O₂ plasma-treated PES films for different RF powers of the ICP was determined using an atomic force microscope (AFM). The contact angles of the PES films were also measured, using which the surface free energies were calculated. The O1s XPS spectra of the PES films revealed that the number of polar functional groups increased following the O₂ plasma treatment. The AFM analysis showed the average surface roughness increased from 1.01 to 4.48 nm as the RF power of the ICP was increased. The contact angle measurements revealed that the PES films became more hydrophilic as the RF power of the ICP was increased. The total surface energy increased with the RF power of the ICP, resulting from the increased polar energy component.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.499-503
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• 2004

This application-oriented paper describes an automated welding carriage system to weld a thin corrugated workpiece with welding seam tracking function. Hyundai Heavy Industries Corporation has developed an automatic welding carriage system, which utilizes pulsed plasma arc welding process for corrugated sheets. It can obtain high speed welding more than 2 times faster than traditional TIG based welding system. The aim of this development is to increase the productivity by using automatic plasma welding carriage systems, to track weld seam line using vision sensor automatically, and finally to provide a convenience to operator in order to carry out welding. In this paper a robust image processing and a distance based tracking algorithms are introduced for corrugated workpiece welding. The automatic welding carriage system is controlled by the programmable logic controller(PLC), and the automatic welding seam tracking system is controlled by the industrial personal computer(IPC) equipped with embedded OS. The system was tested at actual workpiece to show the feasibility and performance of proposed algorithm and to confirm the reliability of developed controller.

• International journal of advanced smart convergence
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• v.5 no.2
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• pp.24-37
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• 2016

This paper proposes to increase the efficiency of energy in nodes, which rapidly drops during the transmission of the Low Energy Adaptive Clustering Hierarchy (LEACH), through the use of dual-hop layered application in the sensor field. Along with introducing the dual-hop method in the data transmission, the proposed single-hop method for short-range transmission and multi-hop transmission method between the cluster heads for remote transmission were also introduced. Additionally, by introducing a partial multi-hop method in the data transmission, a single-hop method for short range transmission method between the cluster heads for remote transmission was used. In the proposed DL-LEACH, the energy consumption of the cluster head for remote transmission reduced, as well as increased the energy efficiency of the sensor node by reducing the transmission distance and simplifying the transmission route for short-range transmission. As compared the general LEACH, it was adapted to a wider sensor field.

• Journal of information and communication convergence engineering
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• v.5 no.2
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• pp.116-120
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• 2007

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that $I_{dark}\;is\;{\sim}10^{-13}\;A,\;I_{photo}\;is\;{\sim}10^{-9}\;A\;and\;I_{photo}/I_{dark}\;is\;{\sim}10^4$, respectively. In the case of a-Si:H TFT, it indicates that $I_{on}/I_{off}\;is\;10^6$, the drain current is a few ${\mu}A\;and\;V_{th}\;is\;2{\sim}4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 volts in ITO of photodiode and $70 {\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.