Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process

  • Woo, Jong-Chang (Nano Convergence Sensor Research Section, Electronics and Telecommunications Research Institute) ;
  • Choi, Chang-Auck (Nano Convergence Sensor Research Section, Electronics and Telecommunications Research Institute) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • Received : 2013.10.08
  • Accepted : 2014.01.14
  • Published : 2014.02.25
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Abstract

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

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References

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