Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Dry Etching Characteristics of Indium Zinc Oxide Thin Films in Adaptive Coupled Plasma

  • Woo, Jong-Chang (Nano Convergence Sensor Research Section, Electronics and Telecommunications Research Institute) ;
  • Choi, Chang-Auck (Nano Convergence Sensor Research Section, Electronics and Telecommunications Research Institute) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • Received : 2013.05.20
  • Accepted : 2013.07.03
  • Published : 2013.08.25
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Abstract

The etching characteristics of indium zinc oxide (IZO) in $Cl_2/Ar$ plasma were investigated, including the etch rate and selectivity of IZO. The IZO etch rate showed non-monotonic behavior with increasing $Cl_2$ fraction in the $Cl_2/Ar$ plasma, and with increasing source power, bias power, and process pressure. In the $Cl_2/Ar$ (75:25%) gas mixture, a maximum IZO etch rate of 87.6 nm/min and etch selectivity of 1.09 for IZO to $SiO_2$ were obtained. Owing to the relatively low volatility of the by-products formation, ion bombardment was required, in addition to physical sputtering, to obtain high IZO etch rates. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. These data suggested that the IZO etch mechanism was ion-enhanced chemical etching.

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References

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