• Title/Summary/Keyword: X-ray photoelectron spectroscopy

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Recognition of Plasma- Induced X-Ray Photoelectron Spectroscopy Fault Pattern Using Wavelet and Neural Network (웨이블렛과 신경망을 이용한 플라즈마-유도 X-Ray Photoelectron Spectroscopy 고장 패턴의 인식)

  • Kim, Soo-Youn;Kim, Byung-Whan
    • Proceedings of the KIEE Conference
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    • 2006.04a
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    • pp.135-137
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    • 2006
  • To improve device yield and throughput, faults in plasma processing equipment should be quickly and accurately diagnosed. Despite many useful information of ex-situ sensor measurements, their applications to recognize plasma faultshave not been investigated. In this study, a new technique to identify fault causes by recognizing X-ray photoelectron spectroscopy (XPS) using neural network and continuous wavelet transformation (CWT). The presented technique was evaluated with the plasma etch data. A totalof 17 experiments were conducted for model construction. Model performance was investigated from the perspectives of training error, testing error, and recognition accuracy with respect to various thresholds. CWT-based BPNN models demonstrated a higher prediction accuracy of about 26%. Their advantages over pure XPS-based models were conspicuous in all three measures at small networks.

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Monitoring of semiconductor plasma process using wavelet and X-ray photoelectron spectroscopy (웨이브릿과 X-ray 광전자 분광법을 이용한 반도체 플라즈마 공정 감시 기법)

  • Park, Kyoung-Young;Kim, Byung-Whan
    • Proceedings of the KIEE Conference
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    • 2005.05a
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    • pp.281-283
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    • 2005
  • Processing Plasmas are very sensitive to a variation in process parameters, To maintain process quality and device field, plasma malfunction should be tightly monitored with high sensitivity. A new monitoring method is presented and this was accomplished by applying discrete wavelet transformation to X-ray photoelectron spectroscopy. XPS data were collected during a plasma etching of silicon carbide. Various effects of DWT factor on fault sensitivity were optimized experimentally. Compared to raw data, total percent sensitivity for DWT data demonstrated a significantly improved sensitivity to plasma faults induced by bias power.

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Effect of a Laser Ablation on High Voltage Discharge Plasma Area for Carbon Nitride Film Deposition (고전압 방전 플라즈마에 의한 질화탄소 박막 증착 시 플라즈마 영역에 가한 레이저 애블레이션의 효과)

  • 김종일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.6
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    • pp.551-557
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    • 2002
  • Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with the without the presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor plume plasma expending into th ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The nitrogen content of the films was found to increase drastically with an increase of nitrogen pressure. The surface morphology of the films was studied using a scanning electron microscopy. Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtained films.

Effect of a Laser Ablation for Carbon Nitride Film Deposition (고전압 방전 플라즈마에 의한 질화탄소 박막 층착 시 레이저 애블레이션 효과)

  • 김종일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.240-243
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    • 2002
  • Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with and without the Presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor Plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films was studied using a scanning electron microscopy Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtain films.

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Photoelectron spectro-microscopy/Scanning photoelectron microscopy (SPEM) (광전자 분광현미경학)

  • Shin, Hyun-Joon
    • Vacuum Magazine
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    • v.3 no.4
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    • pp.8-13
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    • 2016
  • The need of space-resolved x-ray photoelectron spectroscopy (XPS) has developed scanning photoelectron microscopy (SPEM). SPEM provides space-resolved XPS data from a spot of a sample as well as images of specific element, chemical state, valency distribution on the surface of a sample. Based on technical advancement of tight x-ray focusing, sample positioning accuracy, and electron analyzer efficiency, SPEM is now capable of providing ~100 nm space resolution for typical XPS functionality, and SPEM has become actively applied for the investigation of chemical state, valency, and electronic structure on the surface of newly discovered materials, such as graphene layers, dichalcogenide 2D-materials, and heterogenous new functional materials.

Interfacial electronic structures of metallic nanoparticles on bare- and functionalized-Au nanoisland templates, and on transition metal oxide supports

  • Son, Yeong-Gu;Pradhan, Debabrata;Leung, K.T.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.348-348
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    • 2011
  • We present the interfacial electronic structures of electrodeposited Cu and Fe on bare and 1,4-phenylene diisocyanide (PDI)-functionalized Au nanoisland templates (NITs), and Au and Ag nanoparticles on transition metal oxide supports. Our discussion is based on the depth-profiling X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM).

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The introduction of X-ray spectroscopy for surface and interface electronic structures (X선을 이용한 표면 및 계면의 전자구조 측정방법 소개)

  • Cho, Sang Wan
    • Vacuum Magazine
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    • v.1 no.1
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    • pp.17-20
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    • 2014
  • This article introduces the basic concepts of various soft X-ray spectroscopies in the study of surface and interface electronic structures. Especially, recent results of X-ray photoelectron spectroscopy experiments on organic/inorganic thin films and a lead-free solder alloys will be discussed. Soft X-ray spectroscopies to understand the chemical and electrical properties would be of broad interest in the vacuum science communities.

Surface Analysis of Cold Rolled Steel Sheets by X-ray Photoelectron Spectroscopy (X-ray Photoelectron Spectroscopy를 이용한 냉연 강판의 표면 분석 연구)

  • Lee, Do Hyung;So, Jae Choon
    • Analytical Science and Technology
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    • v.7 no.1
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    • pp.115-124
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    • 1994
  • The corroded surface of cold rolled steel sheet in the process of rinsing after alkali-cleaning was examined by means of X-ray Photoelectron Spectroscopy(XPS). In addition, the surface-treated cold rolled steel with 0.05wt% $Na_5P_3O_{10}$ solution for the purpose of preventing the corrosion was examined by means of XPS and the results were compared with those for the non-treated cold rolled steel. It was found that the corroded surface consists of $Fe_2O_3$, FeO and $Fe(OH)_3$ and the thickness of the oxide layer is about $1500{\AA}$. On the other hand, in the case of surface-treated cold rolled steel, the phosphate layer of $60{\AA}$ thickness was found to act as a protective film over the relatively thin Fe oxide layer.

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Study on the Degradation Mechanism of FKM O-ring by X-ray Photoelectron Spectroscopy (X-ray Photoelectron Spectroscopy(XPS) 분석법을 이용한 FKM 오링의 노화 메카니즘 분석 연구)

  • Lee, Jin Hyok;Bae, Jong Woo;Yoon, Yu Mi;Choi, Myung Chan;Jo, Nam-ju
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2017.05a
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    • pp.168-171
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    • 2017
  • In this study, we observed degradation mechanism of FKM O-ring by X-ray photoelectron spectroscopy(XPS) at atmosphere condition. FKM O-ring had 3.53mm of cross-sectional diameter and 91.67mm of inner diameter. After thermal degradation, oxygen atom concentration of FKM O-ring was increased to 20.39%, and fluorine atom concentration was decreased to 8.29%. We observed that degradation reaction occurred by oxidation reaction. By C1s and F1s peak analysis, we confirmed that oxidation reaction usually occurred at C-F bonding of FKM main chain. Also, carboxyl group(C-OH, C=O, O=C-O) produced by oxidation reaction from O1s peak analysis.

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