• Macromolecular Research
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• v.11 no.3
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• pp.133-145
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• 2003

We have developed novel lanthanide-cored supramolecular systems with highly efficient light-harvesting dendritic arrays for integrated planar waveguide-typed amplifiers. Er$^{3+}$ ions were encapsulated by the supramolecular ligands, such as porphyrins and macrobicyclics. The supramolecular ligands have been designed and synthesized to provide enough coordination sites for the formation of stable Er(III)-chelated complexes. For getting a higher optical amplification gain, also, the energy levels of the supramolecular ligands were tailored to maintain the effective energy transfer process from supramolecular ligands to erbium(III) ions. Furthermore, to maximize the light-harvesting effect, new aryl ether-functionalized dendrons as photon antennas have been incorporated into lanthanide-cored supramolecular systems. In this paper, molecular design, synthesis and luminescent properties of novel lanthanide-cored integrated supramolecular systems with highly efficient light-harvesting dendritic arrays will be discussed.d.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.635-639
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• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.45-50
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• 2014

In this paper, we propose a super-junction MOSFET (SJ MOSFET) fabricated through a simple pillar forming process by varying the Si epilayer thickness and doping concentration of pillars using SILVACO TCAD simulation. The design of the SJ MOSFET structure is presented, and the doping concentration of pillar, breakdown voltage ($V_{BR}$) and drain current are analyzed. The device performance of conventional Si planar metal-oxide semiconductor field-effect transistor(MOSFET), Si SJ MOSFET, and SiGe SJ MOSFET was investigated. The p- and n-pillars in Si SJ MOSFET suppressed the punch-through effect caused by drain bias. This lead to the higher $V_{BR}$ and reduced on resistance of Si SJ MOSFET. An increase in the thickness of Si epilayer and decrease in the former is most effective than the latter. The implementation of SiGe epilayer to SJ MOSFET resulted in the improvement of $V_{BR}$ as well as drain current in saturation region, when compared to Si SJ MOSFET. Such a superior device performance of SiGe SJ MOSFET could be associated with smaller bandgap of SiGe which facilitated the drift of carriers through lower built-in potential barrier.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.728-732
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• 2011

In this study, piezoelectric and dielectric properties of Lead-free $0.97[(K_{0.5}Na_{0.5})(Nb_{0.97}Sb_{0.03})O_3]+0.03[(Bi_{0.5}K_{0.5})TiO_3]$ (abbreviated as 0.97NKNS-0.03BKT)ceramics synthesized by conventional solid-state reaction process were investigated as a function of $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ addition. The results indicated that the $K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ addition significantly improved the sinterability, grain growth and piezoelctric properties of 0.97NKNS-0.03BKT ceramics. The optimum values as planar piezoelectric coupling coefficient ($k_p$= 0.355), piezoelectric constant ($d_{33}$= 207 pC/N) and mechanical quality factor ($Q_m$= 128) were obtained when 0.009KCT was added. The electromechanical coupling factor($k_p$) was slightly decreased according to the increasing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.164-165
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• 2005

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.18-23
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• 2009

The influence of various surface morphologies on the mechanical strength of silicon substrates was investigated in this study. The yield for the solar cell industry is mainly related to the fracturing of silicon wafers during the manufacturing process. The flexural strengths of silicon substrates were influenced by the density of the pyramids as well as by the size and the rounded surface of the pyramids. To characterize and optimize the relevant texturing process in terms of mechanical stability and the fabrication yield, the mechanical properties of textured silicon substrates were investigated to optimize the size and morphology of random pyramids. Several types of silicon substrates were studied, including the planar type, a textured surface with large and small pyramids, and a textured surface with rounded pyramids. The surface morphology and a cross-section of the as-textured and fractured silicon substrates were investigated by scanning electron microscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.296-300
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• 2021

The performance of devices has been improved with fine processes from planar to three-dimensional transistors (e.g., FinFET, NWFET, and MBCFET). There are some problems such as a short channel effect or a self-heating effect occur due to the reduction of the gate-channel length by miniaturization. To solve these problems, we compare and analyze the electrical and thermal characteristics of FinFET and GAAFET devices that are currently used and expected to be further developed in the future. In addition, the optimal structure according to the Fin shape was investigated. GAAFET is a suitable device for use in a smaller scale process than the currently used, because it shows superior electrical and thermal resistance characteristics compared to FinFET. Since there are pros and cons in process difficulty and device characteristics depending on the channel formation structure of GAAFET, we expect a mass-production of fine processes over 5 nm through structural optimization is feasible.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.420-426
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• 2024

This study proposes an innovative methodology for developing flexible printed circuit boards (FPCBs) capable of conforming to three-dimensional shapes, meeting the increasing demand for electronic circuits in diverse and complex product designs. By integrating a traditional flat plate-based fabrication process with a subsequent three-dimensional thermal deformation technique, we have successfully demonstrated an FPCB that maintains stable electrical characteristics despite significant shape deformations. Using a modified polyimide substrate along with Ag flake-based conductive ink, we identified optimized process variables that enable substrate thermal deformation at lower temperatures (~130℃) and enhance the stretchability of the conductive ink (ε ~30%). The application of this novel FPCB in a prototype 3D-shaped sensor device, incorporating photosensors and temperature sensors, illustrates its potential for creating multifunctional, shape-adaptable electronic devices. The sensor can detect external light sources and measure ambient temperature, demonstrating stable operation even after transitioning from a planar to a three-dimensional configuration. This research lays the foundation for next-generation FPCBs that can be seamlessly integrated into various products, ushering in a new era of electronic device design and functionality.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.183-194
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• 1992

Some silicon micromechanical structures useful in sensors and actuators have been fabricated by electropolishing or porous silicon formation technique by anodic reaction in HF solution. The microstructures were lightly doped single crystal silicon and the formation was isotropic independent of crystal directions. Porous silicon layer(PSL) was formed selectively in $n^{+}$ region of $n^{+}/n$ silicon structure by anodic reaction in concentrated HF(20-48%) solution. Characteristics of the formed PSL were investigated along with change of the reaction voltage, HF concentration and the reaction time. PSL was formed only in $n^{+}$ region. The porosity of the PSL was decreased with the increase of HF concentration and independent of reaction voltage. For the case of $n/n^{+}/n$ structures, the etched surface of silicon was fairly smooth and a cusp was not found. The thickness of the microstructures was the same as that of the epitaxial n-Si layer and good uniformity. We have fabricated acceleration sensors by anodic reaction in HF solution(5 wt%) and planar technology. The process was compatible with conventional It fabrication technique. Various micromechanical structures, such as rotors of motor, gears and linear actuator, were also fabricated by the technique and examined by SEM photographs.

• Economic and Environmental Geology
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• v.42 no.4
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• pp.357-366
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• 2009

Since weathering weakens the rock fabric and exaggerates any structural weakness, it affects mechanical properties as well as physical and chemical properties of rock. Weathering leads to a decrease in density, strength, friction angle and cohesion, and subsequently it affects negatively on the stability of rock slope. The purpose of the study is to investigate the changes of the rock slope stability caused by discontinuities which have different weathering grades. For that, the discontinuity samples which are divided into two different weathering grades are obtained from the field and tested their mechanical properties such as JCS, JRC and residual friction angle. In order to evaluate the effects on the stability of slope due to weathering, the deterministic analysis is carried out. That is, the factors of safety for planar failure are calculated for rock masses which have two different weathering grades, such as fresh and weathered rock mass. However, since the JRC and friction angle values are widely scattered and the deterministic analysis cannot consider the variation, the factors of safety cannot represent properly the stability of the rock slope. Therefore, the probabilistic analysis has been used to consider the scattered values. In the deterministic analysis, the factors of safety for the fresh discontinuity and weathered discontinuity are 1.25 and 1.0, respectively. The results indicate the fresh discontinuities are stable for planar failure and the weathered discontinuities are marginally stable. However, the probabilities of failure for the fresh discontinuity and weathered discontinuity are 25.6% and 45.9%, respectively. This shows that both discontinuities are analyzed as unstable in the probabilistic analysis.