Fabrication of Single-Crystal Silicon Microstructure by Anodic Reaction in HF Solution

HF 양극반응을 이용한 단결정 실리콘 미세구조의 제조

Some silicon micromechanical structures useful in sensors and actuators have been fabricated by electropolishing or porous silicon formation technique by anodic reaction in HF solution. The microstructures were lightly doped single crystal silicon and the formation was isotropic independent of crystal directions. Porous silicon layer(PSL) was formed selectively in $n^{+}$ region of $n^{+}/n$ silicon structure by anodic reaction in concentrated HF(20-48%) solution. Characteristics of the formed PSL were investigated along with change of the reaction voltage, HF concentration and the reaction time. PSL was formed only in $n^{+}$ region. The porosity of the PSL was decreased with the increase of HF concentration and independent of reaction voltage. For the case of $n/n^{+}/n$ structures, the etched surface of silicon was fairly smooth and a cusp was not found. The thickness of the microstructures was the same as that of the epitaxial n-Si layer and good uniformity. We have fabricated acceleration sensors by anodic reaction in HF solution(5 wt%) and planar technology. The process was compatible with conventional It fabrication technique. Various micromechanical structures, such as rotors of motor, gears and linear actuator, were also fabricated by the technique and examined by SEM photographs.

실리콘 기판을 HF용액 내에서 양극반응을 시켜 electropolishing법 또는 PSL 형성법으로 센서와 actuator에 유용한 다양한 모양의 실리콘 미세 기계구조를 제조하였다. 미세구조는 시편의 결정면에 관계없이 형성되었으며, 저농도 도핑된 단결정 실리콘이다. $n^{+}/n$ 실리콘 시편을 HF용액(20-48%)내에서 양극반응시켜 $n^{+}$ 영역에 선택적으로 PSL을 형성하였으며, HF농도, 반응전압 및 반응시간에 따른 PSL 형성의 특성을 조사였다. $n^{+}$ 영역에만 PSL이 형성되었으며 PSL의 다공도는 HF 농도 증가에 따라 감소하였으며, 반응전압에는 무관하였다. $n/n^{+}/n$형 구조를 이용하여 미세구조를 제조한 경우, 식각된 실리콘 표면이 균일하고 cusp가 제거되었으며, 미세구조의 두께는 전 영역을 통하여 n-epi.층의 두께로 일정하였다. HF용액(5 wt%)에서의 양극반응과 planar기술을 이용하여 가속도센서를 제조하여 기존의 IC 공정기술과 함께 사용이 가능함을 확인하였다. 또 모터의 회전자, 기어 등의 미세 기계구조를 PSL 형성법으로 제조하고 SEM 사진으로 조사하였다.