• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.618-618
• /
• 2013

Graphene is only one atom thick planar sheet of sp2-bonded carbon atoms arranged in a honeycomb crystal lattice, which has flexible and transparent characteristics with extremely high mobility. These noteworthy properties of graphene have given various applicable opportunities as electrode and/or channel for various flexible devices via suitable physical and chemical modifications. In this work, for the development of all-graphene devices, we performed to synthesize alternately patterned structure of mono- and multi-layer graphene by using the patterned Ni film on Cu foil, having much different carbon solid solubilities. Depending on the process temperature, Ni film thickness, introducing occasion of methane and gas ratio of CH4/H2, the thickness and width of the multi-layer graphene were considerably changed, while the formation of monolayer graphene on just Cu foil was not seriously influenced. Based on the alternately patterned structure of mono- and multi-layer graphene as a channel and electrode, respectively, the flexible TFT (thin film transistor) on SiO2/Si substrate was fabricated by simple transfer and O2 plasma etching process, and the I-V characteristics were measured. As comparing the change of resistance for bending radius and the stability for a various number of repeated bending, we could confirm that multi-layer graphene electrode is better than Au/Ti electrode for flexible applications.

• Proceedings of the Korean Society for Agricultural Machinery Conference
• /
• 1993.10a
• /
• pp.1222-1229
• /
• 1993

An advanced design environment , which is based on adaptive and knowledge -based finite elements (INTELMESH), has been developed. Unlike other approaches, INTEMMESH incorporates the information about the object geometry as well as the boundary and loading conditions to generate an ${\alpha}$-priori finite element mesh which is more refined around the critical regions of the problem domain. INTEMMESH is designed for planar domains and axisymmetric 3-D structures of elasticity and heat transfer subjected to mechanical and thermal loading . It intelligently identifies the critical regions/points in the problem domain and utilize the new concepts of substructuring and wave propagation to choose the proper mesh size for them. INTEMMESH generates well-shaped triangular elements by applying trangulartion and Laplacian smoothing procedures. The adaptive analysis involves the intial finite elements analyze and an efficient ${\alpha}$-posteriori error analysis involves the initial finite element anal sis and an efficient ${\alpha}$-posteriori error analysis and estimation . Once a problem is defined , the system automatically builds a finite element model and analyzes the problem though automatic iterative process until the error reaches a desired level. It has been shown that the proposed approach which initiates the process with an ${\alpha}$-priori, and near optimum mesh of the object , converges to the desired accuracy in less time and at less cost. Such an advanced design/analysis environment will provide the capability for rapid product development and reducing the design cycle time and cost.

• Transactions of Materials Processing
• /
• v.12 no.8
• /
• pp.710-717
• /
• 2003

The implicit, finite element analysis program for analyzing the springback in the warm forming process of aluminum alloy sheets was developed. For the description of planar anisotropy in warm forming temperatures, Barlat's yield function is employed, and the power law type constitutive equation is used in terms of working temperatures for the depiction of work hardening in high temperatures. Also, Jetture's 4-node shell elements are introduced for reflecting the mechanical behavior of aluminum alloy sheet and the non-steady heat balance equations are solved for considering heat gain and loss during the forming process. For the springback evaluation, Newton-Raphson iteration method is introduced for overcoming the geometric nonlinearlity problem. In order to verify the validity of the FEM program developed, the stretching bending and springback processes are simulated. Though springback analysis results are slightly bigger than experimental ones, they have the same trend of the decreasing springback as the forming temperature increases.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.211.1-211.1
• /
• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2003.08a
• /
• pp.13-20
• /
• 2003

The implicit, finite element analysis program for analyzing the springback in the warm forming process of aluminum alloy sheets was developed. For the description of planar anisotropy in warm forming temperatures, Barlat's yield function is employed, and the power law type constitutive equation is used in terms of working temperatures fur the depiction of work hardening in high temperatures. Also, Jetture's 4-node shell elements are introduced for reflecting the mechanical behavior of aluminum alloy sheet and the non-steady heat balance equations are solved for considering heat gain and loss during the forming process. For the springback evaluation, Newton-Raphson iteration method is introduced for overcoming the geometric nonlinearlity problem. In order to verify the validity of the FEM program developed, the stretching bending and springback processes are simulated. Though springback analysis results are slightly bigger than experimental ones, they have the same trend of the decreasing springback as the forming temperature increases.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.11 no.6
• /
• pp.969-975
• /
• 2000

New class of three dimensional (3-D) micromachined microwave planar filters at K and Ka-band are presented using LIGA micro-machined process. The K-and Ka-band filters show wide bandpass characteristics of~36% and ~39% with the insertion loss 1.26dB at 19.11GHz and 1.7dB at GHz, respectively. These filters can be applicable in high power MMIC of MIMIC.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.5 no.1
• /
• pp.44-49
• /
• 1995

Abstract The surface of 6H - SiC bulk crystal grown by sublimation process was investigated by optical microscope observation. Since, in the 6H crystal growing, the crystal had the habitual step growth attitude such that the lateral growth rate along the random a - axis orientation was higher than that along the c - axis of the growth direction, then many steps were developed. There were, also, many micropipes on the surface in the form of as-like large voids. However, they were differenciated with pores and cross- sectional shape of them were close to the circle. In this study, many micropipes, planar defects and the growth steps appeared on the grown crystal surface were investigated.

• Journal of the Korean Vacuum Society
• /
• v.19 no.3
• /
• pp.230-235
• /
• 2010

In this paper, we controlled the deposition rate and reflective index with process conditions that are TCP power, gas flow ratio and bias for optical properties of $SiO_2$ thin film using TCP-CVD equipment. We obtained a excellent $SiO_2$ thin film which has a excellent uniformity (<1 [%]), deposition rate (0.28 [${\mu}m$/ min]) and reflective index (1.4610-1.4621) within 4" wafer with process conditions ($SiH_4:O_2$=50 : 100 [sccm], TCP power 1 [kW], bias 200 [W]) at [$300^{\circ}C$].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.3
• /
• pp.173-176
• /
• 2020

This study focuses on a pillar in which is implanted a P-type maneuver under a P base. This structure is called a super junction structure. By inserting the pillar, the electric field concentrated on the P base is shared by the pillar, so the columns can be dispersed while maintaining a high breakdown voltage. Ten pillars were generated during the multi epitaxial process. The interval between pillars is varied to optimize the electric field to be concentrated on the pillar at a threshold voltage of 6 V, a yield voltage of 4,500 V, and an on-state voltage drop of 3.8 V. The density of the filler gradually decreased when the interval was extended by implanting a filler with the same density. The results confirmed that the size of the depletion layer between the filler and the N-epitaxy layer was reduced, and the current flowing along the N-epitaxy layer was increased. As the interval between the fillers decreased, the cost of the epitaxial process also decreased. However, it is possible to confirm the trade-off relationship that deteriorated the electrical characteristics and efficiency.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.10a
• /
• pp.498-501
• /
• 2005

Photonic crystals, periodic structure with a high refractive index contrast modulation, have recently become very interesting platform for manipulation of light. The existence of a photonic bandgap, a frequency range in which propagation of light is prevented in all direction, makes photonic crystal very useful in application where spatial localization of light is required for waveguide, beam splitter, and cavity. But fabrication of 3 dimensional photonic crystal is still difficult process. a concept that has recently attracted a lot of attention is a planar photonic crystal based on a dielectric membrane, suspended in the air, and perforated with 2 dimensional lattice of hole. We show that the polymer slabs suspended in air with triangular lattice of air hole can exhibit the in-plane photonic bandgap for TE-like modes. The fabrication of Si master with pillar structure using hot embossing process was investigated for 2 dimensional low-index-contrast photonic crystal waveguide.