Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis of Electrical Characteristics According to the Pillar Spacing of 4.5 kV Super Junction IGBT

4.5 kV급 Super Junction IGBT의 Pillar 간격에 따른 전기적 특성 분석

  • Lee, Geon Hee (Department of Energy IT Engineering, Far East University) ;
  • Ahn, Byoung Sup (Department of Energy IT Engineering, Far East University) ;
  • Kang, Ey Goo (Department of Energy IT Engineering, Far East University)
  • 이건희 (극동대학교 에너지IT공학과) ;
  • 안병섭 (극동대학교 에너지IT공학과) ;
  • 강이구 (극동대학교 에너지IT공학과)
  • Received : 2020.02.12
  • Accepted : 2020.03.10
  • Published : 2020.05.01
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Abstract

This study focuses on a pillar in which is implanted a P-type maneuver under a P base. This structure is called a super junction structure. By inserting the pillar, the electric field concentrated on the P base is shared by the pillar, so the columns can be dispersed while maintaining a high breakdown voltage. Ten pillars were generated during the multi epitaxial process. The interval between pillars is varied to optimize the electric field to be concentrated on the pillar at a threshold voltage of 6 V, a yield voltage of 4,500 V, and an on-state voltage drop of 3.8 V. The density of the filler gradually decreased when the interval was extended by implanting a filler with the same density. The results confirmed that the size of the depletion layer between the filler and the N-epitaxy layer was reduced, and the current flowing along the N-epitaxy layer was increased. As the interval between the fillers decreased, the cost of the epitaxial process also decreased. However, it is possible to confirm the trade-off relationship that deteriorated the electrical characteristics and efficiency.

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References

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