Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Research for Hot Carrier Degradation in N-Type Bulk FinFETs

  • Park, Jinsu (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Showdhury, Sanchari (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Yoon, Geonju (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Kim, Jaemin (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Kwon, Keewon (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Bae, Sangwoo (Technology Quality & Reliability Foundry Division, Samsung Electronics Co., LTD.) ;
  • Kim, Jinseok (Technology Quality & Reliability Foundry Division, Samsung Electronics Co., LTD.) ;
  • Yi, Junsin (Department of Electrical and Computer Engineering, Sungkyunkwan University)
  • Received : 2019.12.12
  • Accepted : 2020.01.09
  • Published : 2020.05.01
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Abstract

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is VG=VD, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

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References

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