• Journal of the Korean Society for Nondestructive Testing
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• v.21 no.6
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• pp.612-617
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• 2001

A nondestructive evaluation technique for detecting internal defects of an hot forged Al-Si alloy part is established in this study. Ultrasonic characteristics of various internal planar defects are investigated by experiments for establishing a reliable test procedure. The effect of the angle between ultrasonic energy propagation directions and planar defects on the ultrasonic signal configuration is evaluated in the pulse-echo technique. A characteristic of ultrasonic signal for the internal planar defect located near the edge is also evaluated. The applicability of the through-transmission technique is also discussed. Reliability of the presented approach is validated by the destructive testing for more than 500 specimens.

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.699-702
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• 2009

Due to the importance of the SiGe/Si heterostructure in the fields of thermoelectric and electronic applications, SiGe/Si heterostructures have been extensively investigated. For practical applications, thermal stability of the heterostructure during the thermoelectric power generation or fabrication process of electronic devices is of great concern. In this work, we focused on the effect of thermal annealing on the defect configuration in the SiGe/Si heterostructure. The formation mechanism of planar defects in an annealed SiGe/Si heterostructure was investigated by transmission electron microscopy. Due to the interdiffusion of Si and Ge, interface migration phenomena were observed in annealed heterostructures. Because of the strain gradient in the migrated region between the original interface and the migrated interface, the glide of misfit dislocation was observed in the region and planar defects were produced by the interaction of the gliding misfit dislocations. The planar defects were confined to the migrated region, and dislocation pileup by strain gradient was the origin of the confinement of the planar defect.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.558-562
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• 1999

For 6H-SiC crystals which was obtained by sublimation growth, the formation of micropipes and internal planar defects was discussed in consideration of the inter-relationship between mass adsorption behavior and the defects origin on the growth interface on the basis of KSV theory and the the step growth pattern on the vicinal plane. Micropipes and planar defects was formed in the region which the step could not be grown by impurities impinging. It was realized that the internal defects formation was related to the crystallographic step planes formed on the growth interface and the migration of the molecules adsorbed on it.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.373-377
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• 2000

For 6H-SiC single crystals which was obtained by sublimation growth (modified Lely process), the relation between the defects and the etch pits to be formed at the site of dislocations were discussed. Typical hexagonal etch pits were formed on (0001) basal plane. The similar hexagonal etch pit shapes were formed on the site of micropipe defects and it was realized that internal planar defects was formed with the same matrix crystal structure as grown crystals, through the observation of the etching morphology at those internal defects.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.2 s.95
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• pp.225-233
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• 1999

This paper describes a versatile finite element technique which has been used to investigate of wide range of structural defects of practical importance. The procedure automatically remeshes the three-dimensional finite element model during the stages of crack growth. Problems analyzed to date include the surface cracks in leak-before-break situations, the development of quarter-elliptical corner defects, planar semi-elliptical surface defects and the fatigue growth of defects.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.13 no.5
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• pp.87-95
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• 2004

From the results of AE(Acoustic Emission) source location occurred by the spot exciting as suggested in this research, it has been confirmed that AE technique is quite fruitful in figuring out the location of the occurrence, form, size and direction of the defects. As the results of examining the distribution of event for the angle of crack $\alpha$ to Xs and Ys, as the increases from $0^{\circ}$ ~ $90^{\circ}$, gradually changes its width from the axis Xs to the axis Ys. So event appears approximately similar in its size at the angle of crack $\alpha$=$45^{\circ}$, yet opposite when $\alpha$ is lager. It is believed that this is a phenomenon where its crack legnth $\alpha$, assumed as a planar defect, is to be prcjected toward the direction with a larger size. Thus, it is expected that the application of the experimental method suggested in this study would make it possible to identify the location of the defect in the material in the nondestructive way.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.35-40
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• 1998

There have two kinds of defects, planar defects and vertical defects which were called micropipes in SiC bulk crystals grown by a sublimation method. We could decrease these defects by adding a little piece of Si in the SiC powder or using Ta cylinder in the crucible. so were report the dependence of these defects in a wafer on silicon/carbon ratio in this paper. The chemical species sublimed from SiC powder is affected by carbon from the graphite wall of the crucible. It is important to control the chemical species on the substrate.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.04a
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• pp.369-375
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• 2002

The results of source location in terms of AE signal occurred by the spot exciting as suggested in this research, it has been confirmed that AE technique is quite fruitful in figuring out the location of the occurrence, form, size and direction of the defects. Thus, it is expected that the application of the experimental method suggested in this study would make it possible to identify, in the nondestructive way, the location of the defect in the material.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.15 no.2
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• pp.87-92
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• 2006

This paper supplements shortcoming of radioactivity check by detecting defect of SWP weld zone using ultrasonic wave. Manufacture 2 stage robot detection systems that can follow weld bead of SWP by method to detect weld defects of SWP that shape of weld bead is complex for this as quantitative. Also, through signal processing ultrasonic wave defect signal system of GUI environment that can grasp easily existence availability of defect because do videotex compose. Ultrasonic wave signal of weld defects develops artificial intelligence style sightseeing system to enhance pattern recognition of weld defects and the classification rate using neural net. Classification of weld defects that do fan Planar defect and that do volume defect of by classify.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.29-35
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• 1998

Substrates, SiC raw materials and graphite crucibles were purified for growing the high quality 6H-SiC single crystal ingot. Especially, XRD data of raw materials were analyzed before and after purification. We have grown 6H-SiC single crystal ingot up to 33 mm in diameter and 11 mm in length and SiC wafer for using the substrate and observing the internal defects was about 33 mm in diameter and 0.5 mm in thickness. Utilizing optical microscpe and Raman spectroscopy, internal defects density and crystallinity of the SiC wafer obtained by purification processes before crystal growth were measured. As a result, micropipe density and planar defect density were 100/$\textrm{cm}^2$ and 30/$\textrm{cm}^2$ respectively. Therefore, high quality 6H-SiC single crystal could be grown because internal defects density of 6H-SiC single crystal ingot was decreased by the purification processes before crystal growth.