Proceedings of the Korea Association of Crystal Growth Conference (한국결정성장학회:학술대회논문집)
- 1998.09a
- /
- Pages.35-40
- /
- 1998
Defect formation mechanism of 6H-SiC crystals grown by sublimation method
- Kim, Hwa-Mok (Dept. of Ceramic Engineering, Hanyang Univ.) ;
- Kyung Joo (Dept. of Ceramic Engineering, Hanyang Univ.) ;
- Auh, Keun-Ho (Dept. of Ceramic Engineering, Hanyang Univ.)
- Published : 1998.09.01
Abstract
There have two kinds of defects, planar defects and vertical defects which were called micropipes in SiC bulk crystals grown by a sublimation method. We could decrease these defects by adding a little piece of Si in the SiC powder or using Ta cylinder in the crucible. so were report the dependence of these defects in a wafer on silicon/carbon ratio in this paper. The chemical species sublimed from SiC powder is affected by carbon from the graphite wall of the crucible. It is important to control the chemical species on the substrate.
Keywords