• Title, Summary, Keyword: Photomask

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The comparative algorithm of the design data in the photomask inspection machine with high resolution (Photomask 고해상도 검사기에서 설계 데이터 비교 알고리즘)

  • Kim, Hoi-Sub;Oh, Chang-Seog;Ahn, Tae-Wan
    • Journal of the Korean Society for Industrial and Applied Mathematics
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    • v.10 no.1
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    • pp.1-9
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    • 2006
  • Three categories such as the design of a machine, control and software are necessary in the development of the photomask inspection machine with high resolution. Among them, the design of a software detects inferiority through the comparison of CAD data and real data read by camera from photomask. The block matching algorithm is used since the domain is large and the comparison of data by pixel is accomplished. To correct the error arising from the assembly of a machine, calibration algorithm is used and prefocusing algorithm is suggested to correct the surface of the photomask.

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Laser Process Proximity Correction for Improvement of Critical Dimension Linearity on a Photomask

  • Park, Jong-Rak;Kim, Hyun-Su;Kim, Jin-Tae;Sung, Moon-Gyu;Cho, Won-Il;Choi, Ji-Hyun;Choi, Sung-Woon
    • ETRI Journal
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    • v.27 no.2
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    • pp.188-194
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    • 2005
  • We report on the improvement of critical dimension (CD) linearity on a photomask by applying the concept of process proximity correction to a laser lithographic process used for the fabrication of photomasks. Rule-based laser process proximity correction (LPC) was performed using an automated optical proximity correction tool and we obtained dramatic improvement of CD linearity on a photomask. A study on model-based LPC was executed using a two-Gaussian kernel function and we extracted model parameters for the laser lithographic process by fitting the model-predicted CD linearity data with measured ones. Model-predicted bias values of isolated space (I/S), arrayed contact (A/C) and isolated contact (I/C) were in good agreement with those obtained by the nonlinear curve-fitting method used for the rule-based LPC.

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Self-Inspection for Photomask Defect Extraction (자체 검사를 이용한 포토마스크 결점 추출)

  • Choi, Ji-Hee;Jeong, Hong
    • Proceedings of the IEEK Conference
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    • pp.933-934
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    • 2008
  • This paper describes the process of extracting defect from optical photomask images. We introduce a new method of finding photomask detects with a single optical photomask damaged image. The proposed algorithm is efficient when an original undamaged image is unavailable. The experiment showed that even a small and discontinuous photomask defect was extracted as well as continuous type of defects.

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나노초 광 매개 발진기의 동작 특성

  • 이성우;이해웅;고도경;최성운;한우성;손정민
    • Proceedings of the Optical Society of Korea Conference
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    • pp.40-41
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    • 2000
  • 광 매개 발진기(Optical Parametric Oscillators)는 그림 1 에서 보는 것처럼 다른 어떤 파장 가변 레이저보다도 넓은 범위(0.3-3$mu extrm{m}$)에서 연속적으로 파장 변환이 가능하고 높은 변환 효율과 양질의 광선 특성을 얻을 수 있기 때문에 가간섭성을 지닌 고체 광원으로 널리 쓰이고 있고, 현재 연구가 활발히 진행되고 있다. (중략)

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Application of Transmittance-Controlled Photomask Technology to ArF Lithography (투과율 조절 포토마스크 기술의 ArF 리소그래피 적용)

  • Lee, Dong-Gun;Park, Jong-Rak
    • Korean Journal of Optics and Photonics
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    • v.18 no.1
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    • pp.74-78
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    • 2007
  • We report theoretical and experimental results for application of transmittance-controlled photomask technology to ArF lithography. The transmittance-controlled photomask technology is thought to be a promising technique fo critical dimension (CD) uniformity correction on a wafer by use of phase patterns on the backside of a photomask. We could theoretically reproduce experimental results for illumination intensity drop with respect to the variation of backside phase patterns by considering light propagation from the backside to the front side of a photomask at the ArF lithography wavelength. We applied the transmittance-controlled photomask technology to ArF lithography for a critical layer of DRAM (Dynamic Random Access Memory) having a 110-nm design rule and found that the in-field CD uniformity value was improved from 13.8 nm to 9.7 nm in $3{\sigma}$.

Modified Illumination by Binary Phase Diffractive Patterns on the Backside of a Photomask (마스크 뒷면에 2 위상 회절 격자를 구현한 변형 조명 방법)

  • 이재철;오용호;고춘수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.7
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    • pp.697-700
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    • 2004
  • We propose a method that realizes the modified illumination by implementing a binary phase grating at the backside of a photomask. By modeling the relationship between the shape of a grating on the photomask and the light intensity at the pupil plane, we developed a program named MIDAS that finds the optimum grating pattern with a stochastic approach. After applying the program to several examples, we found that the program finds the grating pattern for the modified illumination that we want. By applying the grating at the backside of a photomask, the light efficiency of modified illumination may be improved.

Transmittance controlled photomasks by use of backside phase patterns (후면 위상 패턴을 이용한 투과율 조절 포토마스크)

  • Park, Jong-Rak;Park, Jin-Hong
    • Korean Journal of Optics and Photonics
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    • v.15 no.1
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    • pp.79-85
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    • 2004
  • We report on a transmittance controlled photomask with phase patterns on the back quartz surface. Theoretical analysis for changes in illumination pupil shape with respect to the variation of size and density of backside phase patterns and experimental results for improvement of critical dimension uniformity on a wafer by using the transmittance controlled photomask are presented. As phase patterns for controlling transmittance of the photomask we used etched contact-hole type patterns with 180" rotative phase with respect to the unetched region. It is shown that pattern size on the backside of the photomask must be made as small as possible in order to keep the illumination pupil shape as close as possible to the original pupil shape and to achieve as large an illumination intensity drop as possible at a same pattern density. The distribution of illumination intensity drop suitable for correcting critical dimension error was realized by controlling pattern density of the contact-hole type phase patterns. We applied this transmittance controlled photomask to a critical layer of DRAM (Dynamic Random Access Memory) having a 140nm design rule and could achieve improvement of the critical dimension uniformity value from 24.0 nm to 10.7 nm in 3$\sigma$.TEX>.

Improved performance of multi tone masks by advanced compensation methods

  • Ekberg, Peter;Sydow, Axel Von
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.520-523
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    • 2009
  • The drive towards lowering costs and increasing frame rates results in new panel designs and thereby new photomasks designs. One common way to reduce cost is to reduce the number of production steps. For this multi tone photomasks (MTM) are needed. MTMs contain more information and increases photomask placement requirements. Increasing frame rates lead to shrinking geometries. The combination of HTM and shrinking geometries drastically increases the requirements imposed on the pattern generators used to print the photomasks. New methods are therefore needed to enable future photomask manufacturing. This paper introduces three advanced image quality enhancing methods.

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Selective surface modification for biochip with micromirror array (마이크로미러를 사용한 바이오칩의 선택적 표면 개질을 위한 광변조 실험)

  • Lee, Kook-Nyung;Sin, Dong-Sik;Lee, Yoon-Sik;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • pp.2257-2259
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    • 2000
  • This paper reports on the design, fabrication and driving experiment of micro mirror array(MMA) for lithography process to apply to biochip fabrication Photolithography technology is applied to activate specific area on the surface of modified glass surface, DNA monomers are bound on the activated area of the glass surface. After repeat of DNA monomer synthesizing process, DNA single strand probes could be solid-synthesized on the glass substrate. Without using photomask, photolithography process is tried using micro mirror array(MMA). Photomask or mask alignment is not required in maskless photolithography process using micro mirror array.

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A Study on Circuit Parameter Extraction from Mask Pattern Data (마스크 패턴데이타로 부터의 회로 파라미터 추출에 관한 연구)

  • Lee, Jae-Seong;Rho, Seung-Ryong;Kim, Chul-Ju
    • Proceedings of the KIEE Conference
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    • pp.1532-1535
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    • 1987
  • In this paper, we propose the algorithm for mask level simulation. The circuit parameters were extracted from the photomask data in format of bitmap. The extracted circuit parameter was transformed into the input file format of SPICE-16. And then the simulation of mask pattern data was carried out the SPICE-16. Thus the error operation of IC due to the mistake of photomask pattern could be prevented.

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