• Journal of the Korean Magnetics Society
• /
• v.13 no.4
• /
• pp.160-164
• /
• 2003

The external magnetic field dependency of the impedance, resistance, and inductance of the meander pattern fabricated by using Co-base amorphous ribbon has been investigated in the frequency range of 300 ㎑∼1 ㎓. The amorphous ribbon was patterned to the meander pattern through conventional photolithography and wet etching process. The extremely high sensitivity in impedance changing ratio by external magnetic field was observed. This is due to the transverse magnetic anisotropy the pattern which was induced by magnetic field annealing. The impedance had peak value at the external field of -13 Oe and the impedance changing ratio 100 ${\times}$ (Z$\_$13/-Z$\_$0/)/Z$\_$0/) was about 210％ at the frequency of 50 MHz.

• Journal of Sensor Science and Technology
• /
• v.6 no.4
• /
• pp.337-345
• /
• 1997

The micro heater with PSG/$Si_{3}N_{4}$ diaphragm and platinum heater pattern was designed for micro-gas sensor fabrication. The platinum heater and the platinum electrode for sensing layer were designed on the same plane and fabricated in the single photolithography process. The thermal analyses including temperature distribution over the diaphragm and power consumption of the heater were carried by finite element method. The thermal properties of the microsensor with both heater and sensing electrode on the same plane was compared with that of the typical microsensor which had the structure of sensing layer/insulator/heater on the diaphragm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.255-255
• /
• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• Safety and Health at Work
• /
• v.10 no.1
• /
• pp.114-121
• /
• 2019

Background: The photolithography process in the semiconductor industry uses various chemicals with little information on their constitution. This study aimed to identify the chemical constituents of photoresist (PR) products and their by-products and to compare these constituents with material safety data sheets (MSDSs) and analytical results. Methods: A total of 51 PRs with 48 MSDSs were collected. Analysis consisted of two parts: First, the constituents of the chemical products were identified and analyzed using MSDS data; second, for verification of the by-products of PR, volatile organic compounds were analyzed. The chemical constituents were categorized according to hazards. Results: Forty-five of 48 products contained trade secrets in amounts ranging from 1 to 65%. A total of 238 ingredients with multiple counting (35 ingredients without multiple counting) were identified in the MSDS data, and 48.7% of ingredients were labeled as trade secrets under the Korea Occupational Safety and Health Act. The concordance rate between the MSDS data and the analytical result was 41.7%. The by-product analysis identified 129 chemicals classified according to Chemical Abstracts Service No., with 17 chemicals that are carcinogenic, mutagenic, and reprotoxic substances. Formaldehyde was found to be released from 12 of 21 products that use novolak resin. Conclusion: We confirmed that several PRs contain carcinogens, and some were not specified in the toxicological information in the MSDS. Hazardous chemicals, including benzene and formaldehyde, are released from PRs products as by-products. Therefore, it is necessary to establish a systematic management system for chemical compounds and the working environment.

• Safety and Health at Work
• /
• v.11 no.4
• /
• pp.500-508
• /
• 2020

Background: Research on the status of many chemicals used in the semiconductor industry is needed. The purpose of this study was to describe the overall status of chemical use in the semiconductor industry in Korea and to examine it from a health perspective. Methods: Data on the status of chemical use and safety data sheets at 11 of 12 major semiconductor workplaces in Korea were collected. The number of chemical products and chemical constituents, quantities of chemicals, and trade secret ingredients used, as well as the health hazards were examined. Results: On average, 210 chemical products and 135 chemical constituents were used at the surveyed workplaces. Among all chemical products, 33% (range: 16-56%) contained at least one trade secret ingredient. Most of the trade secret ingredients were used in the photolithography process. Several carcinogens, including sulfuric acid, chromic acid, ethylene oxide, crystalline silica, potassium dichromate, and formaldehyde were also used. Only 29% (39 of 135) of the chemical constituents had occupational exposure limits, and more than 60% had no National Fire Protection Association health, safety, and reactivity ratings. Based on the aforementioned results, this study revealed the following. First, many chemical products and constituents are being used in the semiconductor industry and many products contained trade secret ingredients. Second, many products contained significant amounts of carcinogenic, mutagenic, and reproductive toxicant materials. Conclusion: We conclude that protecting workers in the semiconductor industry against harm from chemical substances will be difficult, due to widespread use of trade secret ingredients and a lack of hazard information. The findings of the status of chemical use and the health and safety risks in semiconductor industry will contribute to epidemiological studies, safe workplace, and worker health protection.

• Progress in Medical Physics
• /
• v.25 no.2
• /
• pp.116-121
• /
• 2014

Next future, The bio technology will be a rapidly developing. This paper is the scattering beam measurement of the red blood cell (RBC) and the fabrication of the micro cell biochip using the bio micro electro mechanical system (Bio-MEMS) process technology. The Major process method of Bio-MEMS technology was used the buffered oxide etchant (BOE), electro chemical discharge (ECD) and ultraviolet sensitive adhesives (UVSA). All experiments were the 10 times according to the process conditions. The experiment and research are required the ultraviolet expose, the micro fluid current, the cell control and the measurement of the output voltage Vpp (peak to peak) waveform by scattering angles. The transmitting and receiving of the laser beam was used the single mode optical fiber. The principles of the optical properties are as follows. The red blood cells were injected into the micro channel. The single mode optical fiber was inserting in the guide channel. The He-Ne laser beam was focusing in the single mode optical fiber. The transmission He-Ne laser beam is irradiating to the red blood cells. The manufactured guide channel consists of the four inputs and the four outputs. The red blood cell was allowed with the cylinder pump. The output voltage Vpp waveform of the scattering beam was measured with a photo detector. The receiving angle of the output optical fiber is $0^{\circ}$, $5^{\circ}$, $10^{\circ}$, $15^{\circ}$. The magnitude of the output voltage Vpp waveform was measured in the decrease according to increase of the reception angles. The difference of the output voltage Vpp waveform is due differences of the light transmittance of the red blood cells.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.2
• /
• pp.65-70
• /
• 2023

Nanoimprint lithography (NIL) has attracted much attention due to its process simplicity, excellent patternability, process scalability, high productivity, and low processing cost for pattern formation. However, the pattern size that can be implemented on metal materials through conventional NIL technologies is generally limited to the micro level. Here, we introduce a novel hard imprint lithography method, extreme-pressure imprint lithography (EPIL), for the direct nano-to-microscale pattern formation on the surfaces of metal substrates with various thicknesses. The EPIL process allows reliable nanoscopic patterning on diverse surfaces, such as polymers, metals, and ceramics, without the use of ultraviolet (UV) light, laser, imprint resist, or electrical pulse. Micro/nano molds fabricated by laser micromachining and conventional photolithography are utilized for the nanopatterning of Al substrates through precise plastic deformation by applying high load or pressure at room temperature. We demonstrate micro/nanoscale pattern formation on the Al substrates with various thicknesses from 20 ㎛ to 100 mm. Moreover, we also show how to obtain controllable pattern structures on the surface of metallic materials via the versatile EPIL technique. We expect that this imprint lithography-based new approach will be applied to other emerging nanofabrication methods for various device applications with complex geometries on the surface of metallic materials.

• Journal of Sensor Science and Technology
• /
• v.6 no.3
• /
• pp.207-213
• /
• 1997

A field effect transistor(FET) type dissolved carbon dioxide($pCO_{2}$) sensor with a double layer structure of hydrogel membrane and $CO_{2}$ gas permeable membrane was fabricated by utilizing a $H^{+}$ ion selective field effect transistor(pH-ISFET) with Ag/AgCl reference electrode as a base chip. Formation of hydrogel membrane with photo-crosslinkable PVA-SbQ or PVP-PVAc/photosensitizer system was not suitable with the photolithographic process. Furthermore, hydrogel membrane on pH-ISFET base chip could be fabricated by photolithographic method with the aid of N,N,N',N'-tetramethyl othylenediarnine(TED) as $O_{2}$ quencher without using polyester film as a $O_{2}$ blanket during UV irradiation process. Photosensitive urethane acrylate type oligomer was used as gas permeable membrane on top of hydrogel layer. The FET type $pCO_{2}$ sensor fabricated by photolithographic method showed good linearity (linear calibration curve) in the range of $10^{-3}{\sim}10^{0}\;mol/{\ell}$ of dissolved $CO_{2}$ in aqueous solution with high sensitivity.

• Journal of Sensor Science and Technology
• /
• v.11 no.6
• /
• pp.358-364
• /
• 2002

In this paper, we used U.V.(wavelength, 355nm) laser for adjusting Pt thin films temperature sensor to $100{\Omega}$ at $0^{\circ}C$. Internationally, A-class tolerance of temperature sensor is $0.06{\Omega}$ at $0^{\circ}C$. This is under value of $0.15^{\circ}C$, actually, so high-fine trimming technology is essential to this process. The width of trimmed lines was about $10{\mu}m$ and the best trimming of Pt thin films of $1{\sim}1.5{\mu}m$ was carried out with power : 35mW, rep. rate frequency : 200Hz and bite size : $1.5{\mu}m$. And using photolithography process, 96 resistors were fabricated in $2"{\times}2"$ substrate as the proportion of $79{\sim}90{\Omega}$ and $91{\sim}102{\Omega}$ is 42.7% and 57.3%, respectively. As result of trimming resistors to the target value of $109.73{\Omega}$ at $25^{\circ}C$, 82.3% of resistors had the tolerance within ${\pm}0.30{\Omega}$ and the others(17.7%) were within ${\pm}0.06{\Omega}$ of A-class tolerance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.176-177
• /
• 2013

Surface plasmon polaritons (SPPs) have attracted the attention of scientists and engineers involved in a wide area of research, microscopy, diagnostics and sensing. SPPs are waves that propagate along the surface of a conductor, usually metals. These are essentially light waves that are trapped on the surface because of their interaction with the free electrons of conductor. In this interaction, the free electrons respond collectively by oscillating in resonance with the light wave. The resonant interaction between the surface charge oscillation and the electromagnetic field of the light constitutes the SPPs and gives rise to its unique properties. In this papers, we studied theoretical and experimental extraordinary transmittance (T) and reflectance (R) of 2 dimensional metal hole array (2D-MHA) on GaAs in consideration of the diffraction orders. The 2d-MHAs was fabricated using ultra-violet photolithography, electron-beam evaporation and standard lift-off process with pitches ranging from 1.8 to $3.2{\mu}m$ and diameter of half of pitch, and was deposited 5-nm thick layer of titanium (Ti) as an adhesion layer and 50-nm thick layer of gold (Au) on the semiinsulating GaAs substrate. We employed both the commercial software (CST Microwave Studio: Computer Simulation Technology GmbH, Darmstadt, Germany) based on a finite integration technique (FIT) and a rigorous coupled wave analysis (RCWA) to calculate transmittance and reflectance. The transmittance was measured at a normal incident, and the reflectance was measured at variable incident angle of range between $30^{\circ}{\sim}80^{\circ}$ with a Nicolet Fourier transmission infrared (FTIR) spectrometer with a KBr beam splitter and a MCT detector. For MHAs of pitch (P), the peaks ${\lambda}$ max in the normal incidence transmittance spectra can be indentified approximately from SP dispersion relation, that is frequency-dependent SP wave vector (ksp). Shown in Fig. 1 is the transmission of P=2.2 um sample at normal incidence. We attribute the observation to be a result of FTIR system may be able to collect the transmitted light with higher diffraction order than 0th order. This is confirmed by calculations: for the MHAs, diffraction efficiency in (0, 0) diffracted orders is lower than in the (${\pm}x$, ${\pm}y$) diffracted orders. To further investigate the result, we calculated the angular dependent transmission of P=2.2 um sample (Fig. 2). The incident angle varies from 30o to 70o with a 10o increment. We also found the splitting character on reflectance measurement. The splitting effect is considered a results of SPPs assisted diffraction process by oblique incidence.