• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1097-1102
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• 2003

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode, Considering these results, we fabricated p-i-n diodes on the high resistive(4㏀$.$cm) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of pin diode can be decreased by the application of finger pattern has parallel resistance structure from 571Ω to 393Ω.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.385-385
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• 2010

In this work, we have investigated the etching characteristics of $TiO_2$ and selectivity of $TiO_2$ over $SiO_2$ thin films as resistance in ReRAM using the inductively coupled plasma. The etch rate and selectivity were measured by varying the $BCl_3$ addition into Ar plasma. The maximum etchrate was obtained at 110.1nm/min at $BCl_3$/Ar=5sccm/10sccm, 500W for RFpower, -100v for DC-bias voltage, and 2Pa for the process pressure. The etched $TiO_2$ surface was investigated with X-ray photo electron spectroscopy. We explained the etching mechanism in two etch mechanisms, physiclas puttering and chemical reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.497-500
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• 1999

This paper reports on the fabrication and characteristics of recessed gate GaN MESFETs fabricated using a photoelectrochemical wet etching method. The unique etching process utilizes photo-resistive mask and KOH based etchant. GaN MESFETs with successfully recessed gate structure was characterized in terms of dc and RF performance. The fabricated GaN MESFET exhibits a current saturation at $V_{DS}$ = 4 V and a pinch-off at $V_{GS}$ =-3V The peak drain current of the device is about 230mA/mm at 300 K and the value is remained almost same for 500K operation. The $f_{T}$ and $f_{max}$ from the device are 6.357Hz and 10.25 GHz, respectively.y.y.

• 전기의세계
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• v.38 no.4
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• pp.12-19
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• 1989

16Mb DRAM을 개발하는데 필요한 주요한 기술적인 문제점으로 설계면에서는 전력소모, Noise, Vcc내부 전압강하회로를 들 수 있다. 기술적인 면은 CELL을 어떻게 형상화느냐에 따라 문제가 다르게 나타나나 단차에 따른 photo/etching, 박막의 leakage전류와 reliability, short channel에 따른 transistor특성의 안정화등이 있다. 특히 16Mb에서는 stack형, stack과 trench의 병합형이 cell의 주요형태가 될 전망이다.

• Journal of IKEEE
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• v.19 no.1
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• pp.41-44
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• 2015

Silicon trench process for bulk fin field effect transistor (finFET) is suggested without using chemical mechanical polishing (CMP) that cause contamination problems with chemical stuff. This process uses thickness difference of photo resistor spin coating and silicon nitride sacrificial layer. Planarization of silicon oxide and silicon trench formation can be performed with etching processes. In this work 50 nm silicon trench is fabricated with AZ 1512 photo resistor and process results are introduced.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.32 no.12
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• pp.915-923
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• 2008

The performance experiments for a microchannel printed circuit heat exchanger (PCHE) of high-performance and high-efficiency on the two technologies of micro photo-etching and diffusion bonding were performed in this study. The microchannel PCHE were experimentally investigated for Reynolds number in ranges of 100 $\sim$ 700 under various flow conditions in the hot side and the cold side. The inlet temperatures of the hot side were conducted in range of $40^{\circ}C\;{\sim}\;50^{\circ}C$ while that of the cold-side were fixed at $20^{\circ}C$. In the flow pattern, the counter flow was provided 6.8% and 10 $\sim$ 15% higher average heat transfer rate and heat transfer performance than the parallel flow, respectively. The average heat transfer rate, heat transfer performance and pressure drop increases with increasing Reynolds number in all the experiment. The increasing of inlet temperature in the experiment range has not an effect on the heat transfer performance while the pressure drop decrease slightly with that of inlet temperature. The experimental correlations to the heat transfer coefficient and pressure drop factor as a function of the Reynolds number have been suggested for the microchannel PCHE.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.174-174
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• 2010

In this article, the dry etching mechanism of ZnO thin films in $N_2/Cl_2$/Ar gas chemistry was investigated. The ZnO thin films were deposited on Si substrate using Atomic layer deposition. The etching experiments were performed by inductively coupled plasma system. The maximum etch rate was104.5 nm/min and the highest selectivity of ZnO over $SiO_2$ was 3.3. Etching rate was measured by surface profiler. And the chemical reaction on the surface of the etched ZnO thin films was investigated by x-ray photo electrons pectroscopy. As a result of XPS, $Zn2p_{3/2}$ peak shifted toward a higher binding energy and the O-O and N-O bond were obtained from the sample of ZnO thin film which after plasma treatment.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.4
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• pp.1993-1998
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• 2011

Semiconductor industry needs to have fine patterns in order to fabricate the high density integrated circuit. For nano-scale patterns, hard-mask is used to multi-layer structure which is formed by CVD (chemical vaporized deposition) process. In this work, we prepared single-layer hard-mask by using organic-inorganic hybrid polymer for spin-on process. The inorganic part of hard-mask was much easier etching than photo resist layer. Beside, the organic part of hard-mask was much harder etching than substrate layer. We characterized the optical and morphological properties to the hard mask films using organic-inorganic hybrid polymer, and then etch rate of photo resist layer and hard-mask film were compared. The hybrid polymer prepared from organic and inorganic materials was found to be useful hard-mask film to form the nano-patterns.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.117-123
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• 1998

We investigated the effect of mechanical backside damage in Czochralski grown silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductivity decay method, photo-acoustic displacement method, X-ray section topography, and wet oxidation/preferential etching methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the photo-acoustic displacement values increased proportionally, and it was at Grade 1: Grade 2:Grade 3 = 1:19.6:41 that the normalized relative quantization ratio of excess photo-acoustic displacement in damaged wafer was calculated, which are normalized to the excess PAD from sample Grade 1.

• Journal of Integrative Natural Science
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• v.17 no.3
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• pp.67-73
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• 2024

Hydrophilic contact lens was prepared by dispersing MXene material in a hydrogel mixture, and the purpose of this study was to evaluate its properties as an ophthalmic material. The MXene used in the experiment was manufactured through an etching process using titanium aluminum carbide 312 [Ti3AlC2] and hydrofluoric acid [HF]. For the preparation of hydrophilic contact lenses, 2-hydroxyethyl methacrylate [HEMA], a photoinitiator 2-hydroxy-2-methylpropiophenone [2H2M], and a cross-linker Ethylene glycol dimethacrylate [EGDMA] were used, and UV-rays was irradiated for 50 seconds for photopolymerization. Optical transmittance, refractive index, water content, contact angle, electromagnetic wave shielding ability, and photo-thermal conversion effect were measured to evaluate the physical properties of the manufactured contact lens. Compared to MXene materials, MXene mixed with Dimethyl sulfoxide [DMSO] had superior dispersion ability in organic solvents, and the transparency of the prepared hydrophilic contact lenses was high. MXene did not significantly affect the refractive index and water content, and improved the wettability of the contact lens. In addition, the MXene material used as an additive showed electromagnetic wave shielding ability and photo-thermal conversion effect based on its excellent electrical conductivity. It is judged that the mixture using MXene as an additive can be used as a functional contact lens material for electromagnetic wave shielding and ocular photo-thermal therapy.