• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.27-32
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• 2000

We have studied the carrier relaxation of InAs/GaAs modulation-doped quantum dots depending on the excitation wavelength and modulation-doping concentration by using the time-ressolved spectroscopy. At the excitation below GaAs barrier band gap, the relaxation processes become very slow, implying to observe the phonon bottleneck effects. On the other hand, at the excitation far above GaAs band gap, phonon bottleneck effects are broken down due to Auger processes. Increasing modulation-doping concentration, the relaxation times, by virtue of Coulomb scattering between electrons in GaAs doped layer and carriers in InAs quantum dots, are observed to become fast.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.4-5
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• 2010

The surface phonon is defined as a coherent vibrational excitation of surface atoms propagating along the surface. It is characterized by a phonon dispersion curves, which were extensively studied in 1990's using helium atom scattering and high-resolution electron-energy-loss spectroscopy (HREELS)[1].The understanding is mainly based on the theoretical framework of a classical bond model or cluster calculations. The recent sample preparation and first principles calculations open the naval way to deep insight for surface phonon problems. The surface phonon dispersion on the hydrogen-terminated Si(111)-($1{\times}1$) surface [H:Si(111)] is the typical system and already reported experimentally [2] and theoretically [3], although the understandingis incomplete. The sample contaminated by the oxygen atoms on the surface and the calculations were also classical. In this study, firstly, we have prepared an ultra-clean H:Si(111) surface [4] and measured the surface phonon dispersion curvesusing HREELS. Secondly, we have performed first-principles density functional calculations with the projector augmented wave functionals, as implemented in VASP, using generalized gradient approximations. We used aslab of six silicon layers and both top and bottom surfaces were terminated with hydrogen atoms. Finally, we have compared with the surface phonon dispersion of deuterium-terminatedSi(111)-($1{\times}1$) surface[5] and led to our conclusions. The Si-H stretching and the bending modes are observed at 258.5 and 78.2 meV, respectively. These energies are the same as the previously reported values [2], but the energy-loss peaks at the lower energy regions are dramatically shifted. Through this combination study, we have formulated the procedure of preparing ultra-clean H:Si(111)/D:Si(111), which was confirmed by HREELS vibrational analysis. The Si surface will be utilized for further nano-physics research as well as for the materials for nano-fubrication.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.3
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• pp.129-134
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• 2017

We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process, the inter-leval transition process, the phonon emission transition process and the phonon absorption transition process.

• Journal of IKEEE
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• v.23 no.2
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• pp.502-507
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• 2019

We investigated theoretically the quantum optical transition properties of qusi 2-Dinensinal Landau splitting system, in Si. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on two transition processes, namely, the phonon emission transition process and the phonon absorption transition process. Through the analysis of this work, we found the increasing properties of QTLW and QTLS of Si with the temperature and the magnetic fields. We also found the dominant scattering processes are the phonon emission transition process.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.62.3-63
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• 2003

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.144-149
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• 2013

We use Memory function to examine the thermal conductivity as a function of the temperature in single-walled carbon nanotube (SWNT). We determine the Umklapp, normal and SWNT-substrate phonon scattering rate from the computed inverse spin relaxation time. Thermal conductivity increased as the diameter increased when we assumed that the zigzag (10,0) transition was a more dominant phonon scattering than the (9,0) transition.

• Journal of Ceramic Processing Research
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• v.20 no.6
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• pp.582-588
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• 2019

FeVSb1-xTex (0.02 ≤ x ≤ 0.10) half-Heusler alloys were fabricated by mechanical alloying process and subsequent vacuum hot pressing. Near single half-Heusler phases are formed in vacuum hot pressed samples but a second phase of FeSb2 couldn't be avoided. After doping, the lattice thermal conductivity in the system was shown to decrease with increasing Te concentration and with increasing temperature. The lowest thermal conductivity was achieved for FeVSb0.94Te0.06 sample at about 657 K. This considerable reduction of thermal conductivities is attributed to the increased phonon scattering enhanced by defect structure, which is formed by doping of Te at Sb site. The phonon scattering might also increase at grain boundaries due to the formation of fine grain structure. The Seebeck coefficient increased considerably as well, consequently optimizing the thermoelectric figure of merit to a peak value of ~0.24 for FeVSb0.94Te0.06. Thermoelectric properties of various Te concentrations were investigated in the temperature range of around 300~973 K.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.4
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• pp.336-339
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• 2004

In this paper the two-dimensional scattering rates were calculated in pseudomorphic Al/sub x//Ga/sub 1-x//As/Ga/sub y/In/sub l -y//As/GaAs heterostructure systems. The electronic states of the square quantum well were determined by the numerical self-consistent solution of Poisson's and Schrodinger's equations. The numerically obtained wave functions and energy levels were used to obtain the major two-dimensional scattering rates in this structure. Polar optical- and acoustic-phonon scattering, piezoelectric, ionized impurity and alloy scattering were considered for the first two sub-bands. The results were compared to the three-dimensional scattering rates also calculated in the same region.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.1-7
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• 2004

In order to enhance the electron mobility in SOI n-MOSFET, we fabricated fully depletion(FD) n-MOSFET on the strained Si/relaxed SiGa/SiO$_2$/Si structure(strained Si/SGOI) formed by inserting SiGe layer between a buried oxide(BOX) layer and a top silicon layer. The summated thickness of the strained Si and relaxed SiGe was fixed by 12.8 nm and then the dependency of electron mobility on strained Si thickness was investigated. The electron mobility in the FD n-MOSFET fabricated on the strained Si/SGOI enhanced about 30-80% compared to the FD n-MOSFET fabricated on conventional SOI. However, the electron mobility decreased with the strained Si thickness although the inter-valley phonon scattering was reduced via the enhancement of the Ge mole fraction. This result is attributed to the increment of intra-valley phonon scattering in the n-channel 2-fold valley via the further electron confinement as the strained Si thickness was reduced.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.31-37
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• 1998

A new self-consistent hole mobility model that includes lattice and hole temeprature has been proposed. By including the lattice and hole temperatures as well as the effective transverse field and the interface fixed charge, the model predicted the saturation of hole drift velocity and showed the effects of coulomb scattering, surface phonon scattering, and surface roughness scattering. The calculated data by the model were compared with the reported experimental data and they were shown to agree quite well. The new model is expected to estimate the characteristics of very short channel devices in the in the hydrodynamic model simulation.