Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 16 Issue 9
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- Pages.62.3-63
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- 2003
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Effective electron mobility in Si inversion in metal-oxide-semiconductor systems with a high-k insulator: The role of remote phonon scattering
- Fischetti, Massimo V. (IBM Research Division, Thomas J. Watson Research Center) ;
- Neumayers, Deborrah A. (IBM Research Division, Thomas J. Watson Research Center) ;
- Caritier, Eduard A. (IBM Research Division, Thomas J. Watson Research Center)
- Published : 2003.09.01
Abstract
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