• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.331-332
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• 2008

Couplings between electric, magnetic, and structural order parameters result in the so-called multiferroic phenomena with two or more ferroic phenomena such as ferroelectricity, ferromagnetism, or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) permits potential applications in information storage, spintronics, and magnetic or electric field sensors. The perovskite BiFeO3(BFO) is known to be antiferromagnetic below the Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors responsible for leakage current in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is to make donor-doped BFO compounds and thin films. In this study, (Bi1-x,Ndx)(Fe1-y,Tiy)O3 thin films have been deposited on Pt(111)/TiO2/SiO2/Si substrates by pulsed laser deposition. The effect of dopants on the phase evolution and surface morphology are analyzed. Furthermore, electrical and magnetic properties are measured and their coupling characteristics are discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.186-189
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• 2003

The role of excess Pb about the crystallization behavior and electrical properties in b(Zr$\sub$0.52/Ti$\sub$0.48/)O3(PZT) thin films has not been precisely defined. In this work, the effect of excess Pb content on the ferroelectric properties of these films was investigated. To analyze the effect, PZT films containing various amounts of excess Pb were Prepared. PZT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (111) and no pyrochlore phase was observed. As higher excess Pb was included, the films showed that value of leakage current shift from 2.03${\times}$10$\^$-6/ to 6.63 ${\times}$ 10$\^$-8/A/cm$^2$ at 100kV/cm, and value of remanent polarization shift from 8.587 ${\mu}$C /cm$^2$ to 4.256 ${\mu}$C/ cm$^2$. Electrical properties of PZT thin film affected by Pb excess content of target were explained to be caused of defect among space charges and defect grain boundaries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.547-550
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• 2000

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 125$0^{\circ}C$~135$0^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite SrTiO$_3$ and ilmenite MgTiO$_3$ structures coexisted in the (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics. The dielectric constant($\varepsilon$$_{r}$) was increased with addition of SrTiO$_3$. The temperature coefficient of resonant frequency($\tau$$_{f}$) was gradually varied from negative value to the positive value with increasing the SrTiO$_3$. The negative temperature coefficient of resonant frequency of the magnesium titanate was adjusted to near zero at x=0.036, where the dielectric constant, quality factor, and $\tau$$_{f}$ were 20.65, 95120, and +1.3ppm/$^{\circ}C$, respectively. The temperature stability of qualify factor in (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics increased as the amount of MgTiO$_3$./TEX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.260-260
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• 2007

강유전성 세라믹스 재료로써는 PZT계열의 세라믹재료가 널리 쓰이고 있다. 이는 우수한 유전 및 압전특성을 가지고 있으나, PbO을 다량 함유하고 있어 $1000^{\circ}C$이상에서 PbO가 급격하게 휘발되는 성질에 따라서 조성의 변동이 생겨 재현성이 어려우며 이를 방지하기 위하여 과잉 PbO를 첨가시키기 때문에 PbO휘발로 인한 강한 독성이 인체에 유해하다. 최근에는 Pb의 환경문제가 대두됨에 따라 이를 대체할 다른 물질의 개발이 활발하게 연구되고 있다. 대표적인 비납계 강유전 세라믹스인 $(Na_{0.5}K_{0.5})NbO_3$ ($d_{33}$ = 120 pC/N, Kp = 39%, Qm = 210, 이하 NKN라 표기) 조성은 $KNbO_3,\;NaNbO_3$ 상태도에 따라 순수한 NKN 세라믹스는 $1140^{\circ}C$에서 안정상을 가지나, 높은 온도로 인하여$Na_2O$와 $K_2O$가 쉽게 휘발됨에 따라 화학량 비의 변화가 생겨 이차 상을 형성하기도 한다. 따라서 본 연구에서는 $LiNbO_3$의 새로운 고용체를 추가시켜 기본 NKN조성에 압전성 및 고온에서의 상안정성을 향상시키고자 하였다. 최적 조성을 설계하기 위하여 (1-x)$(Na_{0.5}K_{0.5})NbO_3-xLiNbO_3$, x=(0,0.02,0.04,0.06,0.08)의 범위에서 조성을 변화시키면서 실험하였다. 시편 제작은 일반적인 세라믹스 소결 공정을 적용하였는데, $850^{\circ}C$에서 5시간 하소 후 $1080^{\circ}C$에서 2시간 소결하였다. 하소 및 소결 후에는 XRD분석을 통해 perovskite구조를 확인하였고, 미세구조 확인을 위해 주사전자현미경 (SEM)으로 관찰하였다. 압전특성을 평가하기 위해 압전 $d_{33}$-meter를 사용하였으며, impedance analyzer (HP 4194A)를 이용하여 전기적 특성을 측정하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.204-208
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• 2013

In this study, $KNbO_3$-substituted (Li,Na,K)(Nb,Sb,Ta)$O_3$ ceramics were investigated to develop Pb-free composition ceramics for multilayer actuator and energy harvester applications. The X-ray diffraction analysis indicated that all samples were pure perovskite phase and no secondary phase was found. A tetragonality as a function of $KNbO_3$ substitution showed the maximum value at 1.5 mol% $KNbO_3$ and then decreased. The SEM image analysis showed the maximum grain size of $3.14{\mu}m$ at 1.5mol% $KNbO_3$. In the composition ceramics with 1.5 mol% $KNbO_3$ sintered at $1,100^{\circ}C$, excellent properties of density= 4.75 $g/cm^3$, electromechanical coupling factor ($k_p$)= 0.50 and piezoelectric constant($d_{33}$)= 290 pC/N were obtained, respectively, suitable for piezoelectric actuator and energy harvester applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.19-23
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• 2018

In a Pb-included piezoelectric composition, $Sr_yPb_{1-y}[(Zn_{1/3}Nb_{2/3})_x-(Ni_{1/3}Nb_{2/3})_{0.2}-(Zr_{0.46}Ti_{0.54})_{0.8-x}]O_3$ was selected in order to attain high piezoelectric properties. According to the PZN ratio (x) and the amount of Sr doping (y), the crystal structure, microstructure and piezoelectric properties were measured and evaluated. In the case of Sr 4 mol% doping, the piezoelectric properties were the highest for a PZN ratio of 0.1. In this condition, the grain size was larger and the intensity was higher. With the PZN ratio fixed and varying the Sr doping, the piezoelectric properties increased until 10 mol% doping and then decreased for over 12 mol% doping. In the case of x＝0.1 and y＝10 mol%, the best piezoelectric properties were obtained, i.e., $d_{33}=660pC/N$ and $k_p=68.5%$, and these values seem to be related to the grain size and crystal structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.296-296
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• 2007

Ferroelectric neodymium-substituted $Bi_4Ti_3O_{12}$(BTO) thin films have been successfully deposited on Pt/Ti/$SiO_2$/Si substrate by a sol-gel spin-coating process and the effect of crystallization temperature on their microstructure and ferroelectric properties were studied systematically. $Bi(TMHD)_3$, $Nd(TMHD)_3$, $Ti(O^iPr)_4$ were used as the precursors, which were dissolved in 2-methoxyethanol. The thin films were annealed at various temperatures from 600 to $720^{\circ}C$ in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The crystallinity of the BNT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The polarization values of the films were a monotonous function of the crystallization temperature. The remanent polarization value of the BNT thin films annealed at $720^{\circ}C$ was $24.82\;{\mu}C/cm^2$ at an applied voltage of 5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.297-299
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• 1999

Effects of additives on the ceramic and electrical properties of Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$ceramics in a perovskite type structure were investigated. The dielectric and piezoelectric properties of the base composition were improved markedly through selection of Fe$_2$O$_3$ additives in proper amounts. The composition Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$ obtained the dielectric constant ($\varepsilon$$_{r}$=1,425). Also, electromechanical couping factors for planar(k$_{p}$) and piezoelectric constant(d$_{33}$) were obtained 0.50 and 294[pC/N] at the additives 0wt% Fe$_2$O$_3$ respectively. The mechanical quality facor(Q$_{m}$) of Pb(Y$_{1}$2/Ta$_{1}$2/)O$_3$-PbZrO$_3$-PbTiO$_3$+Fe$_2$O$_3$(0.3 wt%) is about 510.510.510.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.271-271
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• 2006

The structural, dielectric and piezoelectric properties of $[Bi_{1-x}(Na_{0.7-x}K_{0.2}Li_{0.1})]_{0.5}BaxTiO_3$ (BNKLBxT) ceramics were studied for the compositional range, x = 0-0.08. The samples were prepared by conventional sintering technique. The result of X-ray diffraction (XRD) suggest that $Ba^{2+}$ diffuse into the $[Bi(Na_{0.7}K_{0.2}Li_{0.1})]_{0.5}TiO_3$ (BNKLT) lattices to form a solid solution with a single phase perovskite structure. The ceramic show excellent piezoelectric and ferroelectric properties, and optimum properties measured are as follows: piezoelectric constant $d_{33}=230pC/N$, planar electromechanical coupling factor $k_p\;=\;40.3%$, remanent polarization $P_r\;=\;30\;{\mu}C/cm^2$, and coercive field $E_c\; =\;2.5\;kV/mm$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.581-586
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• 2007

[ $(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ ] (BSCT) powders, prepared by sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing method. The structural and dielectric properties were investigated as a function of the $Yb_2O_3$ doping contents. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed the typical XRD patterns of a cubic polycrystalline structure. The average thickness of all BSCT thick films was about $70{\mu}m$. The grain size of the BSCT thick film doped with 0.7 mol% $Yb_2O_3$ was approximately $6.2{\mu}m$. The Curie temperature and relative dielectric constant at room temperature decreased with increasing $Yb_2O_3$ amount. Relative dielectric constant and dielectric loss of the specimen doped with 0.1 mol% $Yb_2O_3$ were 4637 and 19 % at Curie temperature, respectively.