• Title/Summary/Keyword: Pd-$TiO_{2}$

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PERFORMANCE OF MULTILAYER CERAMIC ACTUATOR BY CONSIDERING THE SHAPE EFFECT

  • Wee, S.B.;Jeong, S.J.;Song, J.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.594-597
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    • 2003
  • In the present study, the piezoelectricity and polarization of multilayer ceramic actuator, being designed to stack PMN-PZ-PT ceramic layers and Ag-Pd electrode layers alternatively, were investigated under a consideration of geometric factor, the volume ratio of the ceramic to the electrode layers. The actuators were fabricated by tape casting of 0.2Pb(Mg1/3Nb2/3)O3-0.38PbZrO3-0.42PbTiO3 followed by lamination and burnout & co-firing processes. The actuators of 10 10 0.62 nm3 in size were formed in a way that 60 200 m thick ceramics were stacked alternatively with 5 m thick electrode layer. Increases in polarization and electric field-induced displacement with thickness of the ceramic layer were attributed to change of 90o/180o domain ratio, which was affected by interlayer internal stress. The piezoelectricity and actuation behaviors were found to depend upon the volume ratio (or thickness ratio) of ceramic to electrode layers.

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Interfacial reaction and Fermi level movements of p-type GaN covered by thin Pd/Ni and Ni/Pd films

  • 김종호;김종훈;강희재;김차연;임철준;서재명
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.115-115
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    • 1999
  • GaN는 직접천이형 wide band gap(3.4eV) 반도체로서 청색/자외선 발광소자 및 고출력 전자장비등에의 응용성 때문에 폭넓게 연구되고 있다. 이러한 넓은 분야의 응용을 위해서는 열 적으로 안정된 Ohmic contact을 반드시 실현되어야 한다. n-type GaN의 경우에는 GaN계면에서의 N vacancy가 n-type carrier로 작용하기 때문에 Ti, Al, 같은 금속을 접합하여 nitride를 형성함에 의해서 낮은 접촉저항을 갖는 Ohmic contact을 하기가 쉽다. 그러나 p-type의 경우에는 일 함수가 크고 n-type와 다르게 nitride가 형성되지 않는 금속이 Ohmic contact을 할 가능성이 많다. 시료는 HF(HF:H2O=1:1)에서 10분간 초음파 세척을 한 후 깨끗한 물에 충분히 헹구었다. 그런 후에 고순도 Ar 가스로 건조시켰다. Pd와 Ni은 열적 증착법(thermal evaporation)을 사용하여 p-GaN에 상온에서 증착하였다. 현 연구에서는 열처리에 의한 Pd의 clustering을 줄이기 위해서 wetting이 좋은 Ni을 Pd 증착 전과 후에 삽입하였으며, monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy)을 사용하여 열처리 전과 40$0^{\circ}C$, 52$0^{\circ}C$ 그리고 695$0^{\circ}C$에서 3분간 열처리 후의 온도에 따른 morphology 변화, 계면반응(interfacial reaction) 및 벤드 휨(band bending)을 비교 연구하였다. Nls core level peak를 사용한 band bending에서 Schottky barrier height는 Pd/Ni bi-layer 접합시 2.1eV를, Ni/Pd bi-layer의 경우에 2.01eV를 얻었으며, 이는 Pd와 Ni의 이상적인 Schottky barrier height 값 2.38eV, 2.35eV와 비교해 볼 때 매우 유사한 값임을 알 수 있다. 시료를 후열처리함에 의해 52$0^{\circ}C$까지는 barrier height는 큰 변화가 없으나, $650^{\circ}C$에서 3분 열처리 후에 0.36eV, 0.28eV 만큼 band가 더 ?을 알 수 있었다. Pd/Ni 및 Ni/Pd 접합시 $650^{\circ}C$까지 후 열 처리 과정에서 계면에서 matallic Ga은 온도에 비례하여 많은 양이 형성되어 표면으로 편석(segregation)되어지나, In-situ SAM을 이용한 depth profile을 통해서 Ni/Pd, Pd/Ni는 증착시 uniform하게 성장함을 알 수 있었으며, 후열처리 함에 의해서 점차적으로 morphology 의 변화가 일어나기 시작함을 볼 수 있었다. 이는 $650^{\circ}C$에서 열처리 한후의 ex-situ AFM을 통해서 재확인 할 수 있었다. 이상의 결과로부터 GaN에 Pd를 접합 시 심한 clustering이 형성되어 Ohoic contact에 문제가 있으나 Pd/Ni 혹은 Ni/Pd bi-layer를 사용함에 의해서 clustering의 크기를 줄일 수 있었다. Clustering의 크기는 Ni/Pd bi-layer의 경우가 작았으며, $650^{\circ}C$ 열처리 후에 barrier height는 Pd/Ni bi-layer의 경우에도 Ni의 영향을 받음을 알 수 있었다.

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Charicteristics of PZT-PMNS using for piezoelectric element of AE sensor (AE센서의 압전소자에 이용할 PZT-PMNS 특성)

  • Kwon, O.D.;Yoo, J.S.;Yoon, Y.J.;Kang, S.H.;Lim, K.J.
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1612-1614
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    • 2004
  • The piezoelectric ceramics for AE-sensor are desired large electromechanical coupling factor, high mechanical quality factor and good characteristic resonance frequency. In this study, the empirical formula of specimens is used 0.9Pb$(Zr_xTi_{1-x})O_3-0.1Pb(Mn_{1/3}Nb_{1/3}Sb_{1/3})O_3$ (PZT-PMNS). The piezoelectric and dielectric characteristic are investigated by sintering temperature and value of x as functions of $Ti^{2+},\;Zi^{2+}$ moi rate. MPB(morphotropic phase boundary) is defned in the x=0.522. Because it is appeared to the best piezoelectric and dielectric characteristic in the x=0.522, it can be application of AE sensor. PZT-PMNS ceramics without pre-amplifier and filter are tested for AE-signal of PD and arc detecting. The detection characteristic is evaluated wave form, frequency distribution.

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A Method to Monitor Vacuum Degree Using Capacitive Partial Discharge Coupler

  • Sun, Jong-Ho;Youn, Young-Woo;Hwang, Don-Ha;Yi, Sang-Hwa;Kang, Dong-Sik
    • Journal of Electrical Engineering and Technology
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    • v.7 no.6
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    • pp.959-964
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    • 2012
  • Internal pressure of vacuum interrupter (VI) is one of the most important parameters in VI operation and may increase due to the outgassing from the materials inside VI or gas permeation through metal flange or ceramic vessel. The increase of the pressure above a certain level leads to the failures of switching or insulation. Therefore, an effective pressure check of VI is essential and an analysis of partial discharge (PD) characteristics is an effective monitoring method to identify the degree of the internal pressure of VI. This paper introduces a research work on monitoring the internal pressure of VI by analyzing PDs which were measured using a capacitive PD coupler. The authors have developed cost effective capacitive coupler based on the ceramic material that has an excellent insulation properties and the main component of the capacitive coupler is made by SrTiO3. Detectable internal pressure range and distinguishability of the internal pressure of VI were investigated. From the PD tests results, the internal pressure range, from $10^{-2}$ torr to 500 torr, can be monitored by PD measurements using the capacitive coupler and PD inception voltage (PDIV) follows the Paschen's law. In addition, rise time of PD pulse at 13.2kV decreases with the increase of the internal pressure of VI.

Charicteristics of PAN-PZT Thick Films on Si-Substrate by Screen Printing (스크린 프린팅법으로 제조된 PAN-PZT 후막의 특성)

  • 김상종;최지원;김현재;성만영;윤석진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.139-142
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    • 2002
  • Characteristics of piezoelectric thick films prepared by screen printing were investigated. The piezoelectric thick films were fabricated using Pb(Al,Nb)O$_3$-Pb(Zr,Ti)O$_3$ system on Si-substrate. The fabricated thick films were burned out at 400$^{\circ}C$ and sintered at 850∼1000$^{\circ}C$ using rapid thermal annealing(RTA) precess. The thickness of piezoelectric thick films were 10$\mu\textrm{m}$. PAN-PZT thick film on Ag-Pd/SiO$_2$/Si prepared at 900$^{\circ}C$/1300sec had remanent polarization of 19.70 ${\mu}$C/$\textrm{cm}^2$.

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Detecting Characteristics of Catalytic Combustible Gas Sensor (접촉연소식 가스 센서의 검지특성)

  • 박찬원;원창섭;유영한;안형근;한득영
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.10
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    • pp.865-870
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    • 2000
  • In this paper, catalytic combustible gas sensor was fabricated and tested under flammable gases such as CH$_4$and $C_4$H$_{10}$by using Pt coil as a heater and/or temperature sensing element. Fine $Al_2$O$_3$powder was used for a bead and Pt, Pd noble metal powder for a catalyst. Resistance variation of Pt wire was traced by the changes of the gas concentrations in a chamber. Output voltage was then monitored to obtain the gas concentration from the resistance variation. In this experiment, MgO was used to protect cracks in the based and TiO$_2$to increase the sensitivity of the sensors. Water glass was also added to enhance the selectivity to the combustible gases.s.

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CO and C3H8 Oxidations over Supported Co3O4, Pt and Co3O4-Pt Catalysts: Effect on Their Preparation Methods and Supports, and Catalyst Deactivation (Co3O4, Pt 및 Co3O4-Pt 담지 촉매상에서 CO/C3H8 산화반응: 담체 및 제조법에 따른 영향과 촉매 비활성화)

  • Kim, Moon-Hyeon;Kim, Dong-Woo;Ham, Sung-Won
    • Journal of Environmental Science International
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    • v.20 no.2
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    • pp.251-260
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    • 2011
  • $TiO_2$- and $SiO_2$-supported $Co_3O_4$, Pt and $Co_3O_4$-Pt catalysts have been studied for CO and $C_3H_8$ oxidations at temperatures less than $250^{\circ}C$ which is a lower limit of light-off temperatures to oxidize them during emission test cycles of gasoline-fueled automotives with TWCs (three-way catalytic converters) consisting mainly of Pt, Pd and Rh. All the catalysts after appropriate activation such as calcination at $350^{\circ}C$ and reduction at $400^{\circ}C$ exhibited significant dependence on both their preparation techniques and supports upon CO oxidation at chosen temperatures. A Pt/$TiO_2$ catalyst prepared by using an ion-exchange method (IE) has much better activity for such CO oxidation because of smaller Pt nanoparticles, compared to a supported Pt obtained via an incipient wetness (IW). Supported $Co_3O_4$-only catalysts are very active for CO oxidation even at $100^{\circ}C$, but the use of $TiO_2$ as a support and the IW technique give the best performances. These effects on supports and preparation methods were indicated for $Co_3O_4$-Pt catalysts. Based on activity profiles of CO oxidation at $100^{\circ}C$ over a physical mixture of supported Pt and $Co_3O_4$ after activation under different conditions, and typical light-off temperatures of CO and unburned hydrocarbons in common TWCs as tested for $C_3H_8$ oxidation at $250^{\circ}C$ with a Pt-exchanged $SiO_2$ catalyst, this study may offer an useful approach to substitute $Co_3O_4$ for a part of platinum group metals, particularly Pt, thereby lowering the usage of the precious metals.

Characteristics of PZT thin film on the g1ass substrate (유리 기판 위에서의 PZT 박막의 특성에 관한 연구)

  • Ju, Pil-Yeon;Jeong, Kyu-Won;Park, Young;Park, Ki-Yeop;Song, Joon-Tae
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1477-1479
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    • 2000
  • The annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$) thin films(4000${\AA}$) have been investigated for a structure of PZT/Pt/Ti/ITO coated glass. Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at 650$^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were 15.8[${\mu}C/cm^2$], 95[kV/cm] respectively. Polarization value decrease about 10% after $10^9$ cycles.

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The effect of rapid thermal annealing treatment for ferroelectric properties of PZT thin films (RTA를 이용한 후열처리가 PZT 박막의 강유전 특성에 미치는 영향)

  • Ju, Pil-Yeon;Park, Young;Jeong, Kyu-Won;Lim, Dong-Gun;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.136-139
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    • 1999
  • The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

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Promoter Effect on Ni/YSZ Anode Catalyst of Solid Oxide Fuel Cell for Suppressing Coke Formation in the Methane Internal Reforming (고체산화물 연료전지용 Ni/YSZ 음극 촉매에서의 메탄 내부개질 반응 시 탄소 침적 억제를 위한 첨가제 영향)

  • Kim, Hye-Roung;Choi, Ji-Eun;Youn, Hyun-Ki;Chung, Jong-Shik
    • Korean Chemical Engineering Research
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    • v.46 no.4
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    • pp.813-818
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    • 2008
  • Various additives were added in small amounts on Ni/YSZ anode of SOFC (solid oxide fuel cell) in order to improve reactivity and to inhibit deactivation due to coke deposition during methane reforming using a low mole ratio steam ($H_2O/CH_4=1.5$) at $800^{\circ}C$. Ni/YSZ catalysts added with various perovskites did not show any improvement but exhibited a gradual decrease in the methane conversion. K-doped Ni/YSZ showed a steady increase and maintenance of the conversion up to 42 hours, after which there was an abrupt deactivation of catalyst owing to potassium loss by volatilization. Addition of 5% of $K_2Ti_2O_5$ on Ni/YSZ showed a stable maintenance of the conversion without K loss, and was able to prevent coke formation during a long time operation. Deactivation of catalyst during the reaction was mainly caused by the accumulation of graphidic carbon on the catalyst surface.