Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Charicteristics of PAN-PZT Thick Films on Si-Substrate by Screen Printing

스크린 프린팅법으로 제조된 PAN-PZT 후막의 특성

  • 김상종 (고려대학교 전기공학과) ;
  • 최지원 (고려대학교 전기공학과) ;
  • 김현재 (고려대학교 전기공학과) ;
  • 성만영 (고려대학교 전기공학과) ;
  • 윤석진 (한국과학기술연구원 박막기술연구센터)
  • Published : 2002.07.01
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Abstract

Characteristics of piezoelectric thick films prepared by screen printing were investigated. The piezoelectric thick films were fabricated using Pb(Al,Nb)O$_3$-Pb(Zr,Ti)O$_3$ system on Si-substrate. The fabricated thick films were burned out at 400$^{\circ}C$ and sintered at 850∼1000$^{\circ}C$ using rapid thermal annealing(RTA) precess. The thickness of piezoelectric thick films were 10$\mu\textrm{m}$. PAN-PZT thick film on Ag-Pd/SiO$_2$/Si prepared at 900$^{\circ}C$/1300sec had remanent polarization of 19.70 ${\mu}$C/$\textrm{cm}^2$.

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