• 제목/요약/키워드: Pass Transistor

검색결과 72건 처리시간 0.029초

8 GHz 대역 국부발진기용 주파수 3체배기 설계 및 제작 (Design and Fabrication of the Frequency Tripper for 8 GHz Local Oscillator)

  • 정미경;홍성용
    • 한국전자파학회논문지
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    • 제13권4호
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    • pp.379-385
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    • 2002
  • 본 논문에서는 MESFET을 이용하여 8 GHz 대역 국부발진기용 주파수 3체배기를 설계 및 제작하였다. A급에 동작점을 두어 3차 하모닉 성분을 발생시켰고, λ$_{g}$/2 개방형 스터브와 대역통과 여파기를 이용하여 기본주파수와 2차 하모닉성분을 억제하였다. 측정결과 0 ㏈m 입력신호에 대해 출력주파수인 8.31 GHz에서의 변환이 득은 2.67 ㏈, -41.17 ㏈c의 고조파 쳐압 특성을 얻었다. 또한 -3 ㏈ 이상의 변환이득을 갖는 대역폭은 510 MHz로 나타났다.다.

SUM 선택신호 발생 방식을 이용한 64-bit 가산기의 설계 (Sum-selector generation algorithm based 64-bit adder design)

  • 백우현;김수원
    • 전자공학회논문지D
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    • 제35D권1호
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    • pp.41-48
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    • 1998
  • This paper proposes a new addition algorithm to improve the addition speed which is one of the important factors for data path functions. We have designed a fast 64-bit adder utilizing al dynamic chain architecture based on the proposed Sum-Selector Generation (SSG) algorithm. Proposed adder is designed with pass-transistor logicto achieve a high speed operation in low voltage circumstance. Realized 64-bit adder with 0.8.mu.m CMOS double-metal process technology has been fully tested. it operates at 185 MHz with 5.0V and chip area occupies 3.66mm$^{2}$. It is also demonstrated that designed adder operates even at 2.0V power supply condition.

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미세공정상에서 전가산기의 해석 및 비교 (Analysis and Comparison on Full Adder Block in Deep-Submicron Technology)

  • 이우기;김정범
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 A
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    • pp.67-70
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    • 2003
  • In this paper the main topologies of one-bit full adders, including the most interesting of those recently proposed, are analyzed and compared for speed, power consumption, and power-delay product. The comparison has been performed on circuits, optimized transistor dimension to minimize power-delay product. The investigation has been carried out with properly defined simulation runs on a Cadence environment using a 0.25-${\mu}m$ process, also including the parasitics derived from layout. Performance has been also compared for different supply voltage values. Thus design guidelines have been derived to select the most suitable topology for the design features required. This paper also proposes a novel figure of merit to realistically compare n-bit adders implemented as a chain of one-bit full adders. The results differ from those previously published both for the more realistic simulations carried out and the more appropriate figure of merit used. They show that, except for short chains of blocks or for cases where minimum power consumption is desired, topologies with only pass transistors or transmission gates are not attractive.

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새로운 복합 모드 로직과 사인 선택 Booth 인코더를 이용한 고성능 32*32-bit 곱셈기의 설계 (Design of a high performance 32*32-bit multiplier based on novel compound mode logic and sign select booth encoder)

  • 송민규
    • 대한전자공학회논문지SD
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    • 제38권3호
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    • pp.51-51
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    • 2001
  • 본 논문에서는 CMOS 로직과 pass-transistor logic(PTL)의 장점만을 가진 새로운 복합모드로직(Compound Mode Logic)을 제안하였다. 제안된 로직은 VLSI설계에서 중요하게 부각되고 있는 저전력, 고속 동작이 가능하며 실제로 전가산기를 설계하여 측정 한 결과 복합모드 로직의 power-delay 곱은 일반적인 CMOS로직에 비해 약 22% 개선되었다 제안한 복합모드 로직을 이용하여 고성능 32×32-bit 곱셈기를 설계 제작하였다. 본 논문의 곱셈기는 개선된 사인선택(Sign Select) Booth 인코더, 4-2 및 9-2 압축기로 구성된 데이터 압축 블록, 그리고 carry 생성 블록을 분리한 64-bit 조건 합 가산기로 구성되어 있다. 0.6um 1-poly 3-metal CMOS 공정을 이용하여 제작된 32×32-bit 곱셈기는 28,732개의 트랜지스터와 1.59×l.68 ㎜2의 면적을 가졌다. 측정 결과 32×32-bit 곱셈기의 곱셈시간은 9.8㎱ 이었으며, 3.3V 전원 전압에서 186㎽의 전력 소모를 하였다.

QVGA급 LDI를 위한 혼합 구동 회로 (Mixed Driving Circuit for QVGA-Scale LDI)

  • 고영근;권용중;이성우;김학윤;최호용
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.573-574
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    • 2008
  • In this paper, we propose a mixed driving circuit for the source driver of QVGA-scale TFT-LCD driver IC to reduce the area of the source driver. In the mixed driving circuit, graphic data pass or go through the mixed channel driver whether RGB data are the same or not. The mixed driving circuit has been designed in transistor level using the 0.35um CMOS technology and has been verified using Hspice.

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비동기 시스템용 고성능 16비트 승산기 설계 (Design of High Performance 16bit Multiplier for Asynchronous Systems)

  • 김학윤;이유진;장미숙;최호용
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 추계종합학술대회 논문집
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    • pp.356-359
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    • 1999
  • A high performance 16bit multiplier for asynchronous systems has been designed using asynchronous design methodology. The 4-radix modified Booth algorithm, TSPC (true single phase clocking) registers, and modified 4-2 counters using DPTL (differential pass transistor logic) have been used in our multiplier. It is implemented in 0.65${\mu}{\textrm}{m}$ double-poly/double-metal CMOS technology by using 6616 transistors with core size of 1.4$\times$1.1$\textrm{mm}^2$. And our design results in a computation rate exceeding 60MHz at a supply voltage of 3.3V.

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Crystallinity of $Pb(Nb_{0.04}Zr_{0.28}Ti_{0.68})O_{3}$ capacitors on ferroelectric properties

  • Yang, Bee-Lyong
    • 한국결정성장학회지
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    • 제12권3호
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    • pp.161-164
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    • 2002
  • Polycrystalline and epitaxial heterostructure films of $La_{0.5}Sr_{0.5}CoO_{3}/Pb(Nb_{0.04}Zr_{0.28}Ti_{0.68})O_{3}/La_{0.5}Sr_{0.5}CoO_{3}$ (LSCO/PNZT/LSCO) capacitors were evaluated in terms of low voltage and high speed operation in high density memory, using TiN/Pt conducting barrier combination. Structural studies for a high density ferroelectric memory process flow, which requires the integration of conducting barrier layers to connect the drain of the pass-gate transistor to the bottom electrode of the ferroelectric stack, indicate complete phase purity (i.e. fully perovskite) in both epitaxial and polycrystalline materials. The polycrystalline capacitors show lower remnant polarization and coercive voltages. However, the retention, and high-speed characteristics are similar, indicating minimal influence of crystalline quality on the ferroelectric properties.

가변 크기 셀을 이용한 저전력 고속 16비트 ELM 가산기 설계 (A design of high speed and low power 16bit-ELM adder using variable-sized cell)

  • 류범선;조태원
    • 전자공학회논문지C
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    • 제35C권8호
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    • pp.33-41
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    • 1998
  • We have designed a high speed and low power 16bit-ELM adder with variable-sized cells uitlizing the fact that the logic depth of lower bit position is less than that of the higher bit position int he conventional ELM architecture. As a result of HSPICE simulation with 0.8.mu.m single-poly double-metal LG CMOS process parameter, out 16bit-ELM adder with variable-sized cells shows the reduction of power-delay-product, which is less than that of the conventional 16bit-ELM adder with reference-sized cells by 19.3%. We optimized the desin with various logic styles including static CMOs, pass-transistor logic and Wang's XOR/XNOR gate. Maximum delay path of an ELM adder depends on the implementation method of S cells and their logic style.

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전 디지털제어 전원장치 (Fully Digital Controlled Power Supply for PLS)

  • 하기만;김윤식;이성근
    • 한국마린엔지니어링학회:학술대회논문집
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    • 한국마린엔지니어링학회 2005년도 전기학술대회논문집
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    • pp.1011-1015
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    • 2005
  • Fully digital controlled 20-bit magnet power supplies have been developed and successfully tested for closed orbit correction of PLS(Pohang Light Source). The new digital power supply has used fiber optics for 25kHz switching of IGBT drivers, and implemented DSP, ADC, Interlock, DCCT cards in a compact 3U-sized 19" chassis. Input/Output low-pass filters suppress harmonics of 60Hz line frequency and switching frequency noise effectively. Overall performance of the power supplies have been demonstrated as +/- 2ppm short-term stability(<1 min), and +/- 10ppm long-term stability(<36 hours). All the existing 12-bit 70 power supplies for vertical correction magnets will be replaced with new digital power supplies during 2005 summer shutdown period. In this paper, we will describe the hardware structure and control method of the digital power supply and the experimental results will be shown.

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New CMOS Fully-Differential Transconductor and Application to a Fully-Differential Gm-C Filter

  • Shaker, Mohamed O.;Mahmoud, Soliman A.;Soliman, Ahmed M.
    • ETRI Journal
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    • 제28권2호
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    • pp.175-181
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    • 2006
  • A new CMOS voltage-controlled fully-differential transconductor is presented. The basic structure of the proposed transconductor is based on a four-MOS transistor cell operating in the triode or saturation region. It achieves a high linearity range of ${\pm}\;1\;V$ at a 1.5 V supply voltage. The proposed transconductor is used to realize a new fully-differential Gm-C low-pass filter with a minimum number of transconductors and grounded capacitors. PSpice simulation results for the transconductor circuit and its filter application indicating the linearity range and verifying the analytical results using $0.35\;{\mu}m$ technology are also given.

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