• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.33-36
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• 1994

The x values of nonstoichiometric chemical formula, $Tb_4O_{7-{\delta}}\;or\;TbO_{1.5+x}$, have been determined in temperature range from 600$^{\circ}$C to 1000$^{\circ}$C under oxygen partial pressure of 2 ${\times}$ 10$^{-1}$ to 1 ${\times}$ 10$^{-5}$ atm by using quartz microbalance. The x values varied from 0.0478 to 0.1964 in the above conditions. The enthalpy of formation for x' in TbO$_{1.5+(0.25-xo-x')}$, ${\delta}H_f$, was 4.93-3.40 kcal mol$^{-1}$ and the oxygen partial pressure dependence was -1/8.80∼-1/11.8 under these conditions. The electrical conductivity of the $TbO_{1.5+x}$ was measured under the same conditions and the values varied from about 10$^{-3}$ to 10$^{-6}\;{\Omega}^{-1}cm^{-1}$ within semiconductor range. The activation energies for the conduction increase with oxygen partial pressure from 0.83 to 0.89 eV under the above conditions. The l/n values obtained from the oxygen pressure dependence of the conductivity are 1/4.4-1/5.2. The conduction mechanism, defect structure, and other physical properties of the oxides are dicussed with the x values, the electrical conductivity values, and the thermodynamic data.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.124-128
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• 2000

Electrical properties of $ZrO_2-TiO_2Yb_2O_3$mixed conductor (Ti-YbSZ) were investigated. This mixed conductor can be applied as a membrane for gas separation at high temperatures. The total conductivity decreased with increasing the $TiO_2$concentration. At high temperatures, the rate of the conductivity degradation became smaller than that at low temperatures. From the oxygen partial pressure dependence of the total conductivity of Ti-YbSZ, the electronic conductivity increased with increasing $TiO_2$concentration at low oxygen partial pressures and at high temperatures. Both 15 and 20 mol% $TiO_2$doped YbSZ showed high oxygen permeability. Mixed conductors, which has high $TiO_2$concentration in YbSZ, are promising materials for using as a membrane for gas separation at high temperatures.

• Communications of the Korean Mathematical Society
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• v.16 no.3
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• pp.459-485
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• 2001

The aim of EIT (electrical impedance tomography) system is to image cross-section conductivity distribution of a human body by means of both generating and sensing electrodes attached on to the surface of the body, where currents are injected and voltages are measured. EIT has been suffered from the severe ill-posedness which is caused by the inherent low sensitivity of boundary measurements to any changes of internal tissue conductivity values. With a limited set of current-to-voltage data, figuring out full structure of the conductivity distribution could be extremely difficult at present time, so it could be worthwhile to extract some necessary partial information of the internal conductivity. We try to extract some key patterns of current-to-voltage data that furnish some core information on the conductivity distribution such s location and size. This overview provides our recent observation on the location search and the size estimation.

• Journal of the Korean Ceramic Society
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• v.23 no.5
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• pp.81-85
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• 1986

$SnO_2$ thin films have been prepared by chemical vapor deposition technique. Electrical and optical properties of the films have been investigated. It is found that the electrical condictivity and optical transparency of the films are most affected by deposition temperature and more affected by $SnCl_4$ partial pressure than by $O_2$ partial pressure. Experimental results show that the conductivity increases with high optical transparency as deposition temperature increases up to 50$0^{\circ}C$ but the conductivity decreases with the loss of transparency as deposition temperature increases above $600^{\circ}C$.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.141-145
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• 1998

The electrical properties of the mixed conducting yttria(8 mol%) stabilized zirconia(YSZ)-nickel oxide(NiO) composites were examined by a.c. impedance, 4-probe d.c. conductivity between 400 and $1000^{\circ}C$. The oxygen partial pressure dependence of conductivity, and electromotive force measurement of galvanic cell enabled to determine the electronic contribution to the conduction. Up to 6 vol% NiO addition, the conductivity decreased since the electronic NiO acted as an insulator in ionic matrix. However the ionic transport was dominant until NiO content reaches 26 vol%. Mixed conduction was observed between 26 and 68 vol% of NiO. The effect of composition on the electrical property was explained by the microstructure and thus by the distribution of two phases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.349-355
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• 2002

The ionic conductivity of cubic solid solutions in the systems of CaO-$ZrO_2$, $Y_2O_3-ZrO_2$ prepared by SHS was examined. The higher conductivity appears to be related to a lower activation energy rather than to the number of oxygen vacancies dictated by composition. Conductivity-temperature data was obtained at 1000 $^{\circ}C$ in atmosphere of low oxygen partial pressure (~$10^{-40}$ atm) for $Y_2O_3-ZrO_2$ cubic solid solutions. The data indicated that these materials could be reduced, and the decree of reduction would be related with the measuring electric field.

• Journal of Surface Science and Engineering
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• v.39 no.6
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• pp.250-254
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• 2006

Effect of hydrogen partial pressure ratio on the structural and electrical properties of highly c-axis oriented ZnO films deposited by oxygen ion-assisted pulsed filtered vacuum arc at a room temperature was investigated. The hydrogen partial pressure ratio were $1.4%\sim9.8%$ at 40% oxygen pressure ratio. The conductivity of ZnO:H films was increased from 1.4% up to 4.2% due to relatively high carrier mobility caused by improvement of crystallinity While the conductivity of ZnO:H films were decreased over than 4.2% and (0002) orientation was also deteriorated. The lowest resistivity of ZnO:H films was $2.5{\times}10^{-3}\;{\Omega}{\cdot}cm$ at 4.2% of hydrogen pressure ratio. Transmittance of ZnO:H films in visible range was 85% which is lower than that of undoped ZnO films because of declined preferred orientation.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.151-155
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• 1998

The total electrical conductivity, ionic conductivity, and nonstoichimetry of a new cathode material $Y_{1-x}Ca_xFeO_{3-\delta}$ (x=0.1) were measured as functions of temperature ($900\leqT/^{\circ}C\leq1100$) and oxygen partial pressure $(10^{-6}\leqPo_2/atm\leq0.21$). Isothermal variations of these properties with $Po_2$ support that the majority type of ionic defects are anti-Frenkel disorder which, however, has seldom been considered for perovskite-based oxides. The results are discussed in comparison with those reported on similar oxides.

• Bulletin of the Korean Chemical Society
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• v.7 no.5
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• pp.341-346
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• 1986

The electrical conductivity of the system ${\alpha}-Fe_2O_3-CoO$ was measured in the temperature range 200-1000$^{\circ}C$ and PO$_{2}$ range 10$^{-7}-2{\times}10^{-1}$ atm. Possible defect models were suggested on the basis of conductivity data, which were measured as a function of temperature and of oxygen partial pressure. The observed activation energies were 0.50 eV and 1.01 eV in the low- and high-temperature regions, respectively. The observed conductivity dependences on PO$_{2}$ were ${\sigma}\;{\alpha}\;PO_2^{-1/6}$ in the PO$_{2}$ range $10^{-7}-10^{-4}$ atm and ${\sigma}\;{\alpha}\;PO_2^{-1/4}$ at PO$_{2}$ 's of $10^{-4}-2{\times}10^{-1}$ atm at temperatures from 300-1000$^{\circ}C$. An extrinsic electron conduction due to an Vo defect and an intrinsic electron conduction due to an Fei' defect were suggested at different temperature and oxygen partial pressure regions, respectively.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.57-64
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• 1999

The electrical conductivity of TiO$_2$ doped with 0.05~1.5mol% WO$_3$ was measured in the oxygen partial pressure range of 10\ulcorner~10\ulcorner atm and temperature range of 1100~130$0^{\circ}C$ to investigate the defect types and the electrical properties. The grain size and density were increased as the liquid phase was formed by the doped WO$_3$. The secondary phase and WO$_3$peaks at the sample doped up to 4.0 mol% were not detected from the XRD results. The data(log$\sigma$/logPo$_2$) over 110$0^{\circ}C$ were divided into the four regions. From these experimental results, we proposed the following defect regions. 1) Magneli phase(extended defect), 2) Reduced rutile region which is similar to the behavior of undoped rutile, 3) Nearly stoichiometric Ti\ulcornerW\ulcornerO$_2$region in which extra charge of W\ulcorner cation is expected to be compensated by an electron, 4) Overstoichiometric Ti\ulcornerW\ulcornerO\ulcorner region which is a metal deficiency not to be observed in pure TiO$_2$. The electrical conductivity of w-doped TiO$_2$ was influenced by the measuring temperature, oxygen partial pressure, and the dopig content.