Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Microstructure and Electrical Properties of W-doped $\textrm{TiO}_2$

W를 첨가한 $\textrm{TiO}_2$의 미세구조 및 전기적 성질

  • Baek, Seung-Bong (Dept.of Ceramics Engineering, Changwon National University) ;
  • Lee, Sun-Il (Dept.of Ceramics Engineering, Changwon National University) ;
  • Kim, Myeong-Ho (Dept.of Ceramics Engineering, Changwon National University)
  • 백승봉 (창원대학교 세라믹공학과) ;
  • 이순일 (창원대학교 세라믹공학과) ;
  • 김명호 (창원대학교 세라믹공학과)
  • Published : 1999.01.01
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Abstract

The electrical conductivity of TiO$_2$ doped with 0.05~1.5mol% WO$_3$ was measured in the oxygen partial pressure range of 10\ulcorner~10\ulcorner atm and temperature range of 1100~130$0^{\circ}C$ to investigate the defect types and the electrical properties. The grain size and density were increased as the liquid phase was formed by the doped WO$_3$. The secondary phase and WO$_3$peaks at the sample doped up to 4.0 mol% were not detected from the XRD results. The data(log$\sigma$/logPo$_2$) over 110$0^{\circ}C$ were divided into the four regions. From these experimental results, we proposed the following defect regions. 1) Magneli phase(extended defect), 2) Reduced rutile region which is similar to the behavior of undoped rutile, 3) Nearly stoichiometric Ti\ulcornerW\ulcornerO$_2$region in which extra charge of W\ulcorner cation is expected to be compensated by an electron, 4) Overstoichiometric Ti\ulcornerW\ulcornerO\ulcorner region which is a metal deficiency not to be observed in pure TiO$_2$. The electrical conductivity of w-doped TiO$_2$ was influenced by the measuring temperature, oxygen partial pressure, and the dopig content.

Keywords

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