Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
권호 표지

Effect of Hydrogen Partial Pressure Ratio on Electrical and Structural Properties of ZnO Thin Film

ZnO 박막의 전기적 구조적 특성에 미치는 수소 분압비의 영향

  • Lee, Sung-Hun (Surface Engineering Research Center, Korea Institute of Machinery and Materials) ;
  • Shin, Min-Geun (Changwon National University) ;
  • Byon, Eung-Sun (Surface Engineering Research Center, Korea Institute of Machinery and Materials) ;
  • Kim, Do-Geun (Surface Engineering Research Center, Korea Institute of Machinery and Materials) ;
  • Jeon, Sang-Jo (Busan Center, Defense Agency for Technology and Quality) ;
  • Koo, Bon-Heun (Changwon National University)
  • 이성훈 (한국기계연구원 표면기술연구센터) ;
  • 신민근 (창원대학교 전자재료실험실) ;
  • 변응선 (한국기계연구원 표면기술연구센터) ;
  • 김도근 (한국기계연구원 표면기술연구센터) ;
  • 전상조 (국방기술품질원 부산센터) ;
  • 구본흔 (창원대학교 전자재료실험실)
  • Published : 2006.12.31
Download PDF
⟨ Previous Next ⟩

Abstract

Effect of hydrogen partial pressure ratio on the structural and electrical properties of highly c-axis oriented ZnO films deposited by oxygen ion-assisted pulsed filtered vacuum arc at a room temperature was investigated. The hydrogen partial pressure ratio were $1.4%\sim9.8%$ at 40% oxygen pressure ratio. The conductivity of ZnO:H films was increased from 1.4% up to 4.2% due to relatively high carrier mobility caused by improvement of crystallinity While the conductivity of ZnO:H films were decreased over than 4.2% and (0002) orientation was also deteriorated. The lowest resistivity of ZnO:H films was $2.5{\times}10^{-3}\;{\Omega}{\cdot}cm$ at 4.2% of hydrogen pressure ratio. Transmittance of ZnO:H films in visible range was 85% which is lower than that of undoped ZnO films because of declined preferred orientation.

Keywords

References

  1. D. R. Clarke, J. Am. Ceram. Soc., 82 (1999) 485 https://doi.org/10.1111/j.1151-2916.1999.tb01793.x
  2. C.-H. Lee, S.-I. Kim, J. Kor. Ceramic Soc., 41 (2004) 102 https://doi.org/10.4191/KCERS.2004.41.2.102
  3. J. Hinze, K. Ellmer, J. Appl. Phys., 88 (2000) 2443 https://doi.org/10.1063/1.1288162
  4. D. R. Clarke, J. Am. Ceram. Soc., 82 (1999) 485 https://doi.org/10.1111/j.1151-2916.1999.tb01793.x
  5. J. H. Choi, H. Tabata, T. Kawai, J. Cryst. Growth 226 (2001) 493 https://doi.org/10.1016/S0022-0248(01)01388-4
  6. X. L. Xu, S. P. Lau, B. K. Tay, Thin Solid Films 398-399 (2001) 244 https://doi.org/10.1016/S0040-6090(01)01452-3
  7. K. Matsubara, P. Fons, K. Iwata, A. Yamada, S. Niki, Thin Solid Films 422 (2002) 176 https://doi.org/10.1016/S0040-6090(02)00965-3
  8. J. J. Cuomo, J. Appl. Phys. 70 (1991) 1706 https://doi.org/10.1063/1.349540
  9. P. K. Song, Y. Shigesato, I. Yasui, C. W. Ow-Yang, D. C. Paine, Jpn. J. Appl. Phys., 37 (1998) 1870 https://doi.org/10.1143/JJAP.37.1870
  10. M. G. Shin, E. Byon, S. Lee, D.-G. Kim, S. J. Jeon, B. H. Koo, J. Kor. Inst. Surf. Eng., 38 (2005) 193
  11. H. Nanto, T. Minami, J. Appl. Phys. 55 (1983) 1029
  12. M. L. Addonizio, C. Privato, Thin solid films 349 (1999) 93 https://doi.org/10.1016/S0040-6090(99)00186-8
  13. F. Ruske, V. Sittinger, R. Rix, Surf. Coat. Technol., 200 (2005) 236 https://doi.org/10.1016/j.surfcoat.2005.01.019
  14. S. H. Keshmiri, M. Rezaee Rokn-Abadi, Thin Solid Films, 382 (2001) 230 https://doi.org/10.1016/S0040-6090(00)01776-4
  15. L.Y. Chen, W. H., Wang, J. J., Hong, F. C. N., Su, Y. K., Applied Physics Letters, 85 (2004) 5628 https://doi.org/10.1063/1.1835991