• 전력전자학회:학술대회논문집
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• 전력전자학회 2013년도 전력전자학술대회 논문집
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• pp.347-349
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• 2013

This paper describes analysis and calculation of line frequency ripple current according to output capacitor value and effects of LED connection in the single stage flyback converter with high power factor. The low frequency output ripple current delivered from single stage converter has been analyzed in detail and the method evaluating parasitic resistance included in LED has been provided. In order to verify the equation derived in this paper, the single stage flyback converter has been designed with constant output current regulation with DCM operation. Experiments were conducted with different LED load structures to analyze the effect of LED parasitic resistance on output ripple current. As test results, the calculation can provide guide line to select capacitor values depending on output ripple current and LED characteristics.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
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• pp.165-168
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• 2002

LTCC에 내장되는 RF 수동소자에 대한 정확한 회로 모델은 RF 모듈을 구성하는데 상당히 효과적인 길을 제공한다. 특히 부득이한 기생성분에 대한 고찰은 반드시 필요하다. 본 연구에서는 3차원 구조에서 발생하는 기생 성분에 대한 고찰을 하였다.

• Journal of Power Electronics
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• 제15권4호
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• pp.1035-1046
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• 2015

This study presents a practical implementation of a multi-mode two-phase interleaved boost converter for fuel cell electric vehicle application. The main operating modes, which include two continuous conducting modes and four discontinuous conducting modes, are discussed. The boundaries and transitions among these modes are analyzed with consideration of the inductor parasitic resistance. The safe operational area is analyzed through a comparison of the different operating modes. The output voltage and power characteristics with open-loop or closed-loop operation are also discussed. Key performance parameters, including the DC voltage gain, input ripple current, output ripple voltage, and switch stresses, are presented and supported by simulation and experimental results.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.701-708
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• 1998

This paper presents a novel non-resonant PWM DC-DC converter for X-ray high-voltage power generator using the parasitic impedances of the high-voltage high-frequency link transformer with its output high-voltage control scheme and steady-state characteristics compared to the conventional series-parallel resonant DC-DC converter. The key point of this approach is to evaluate effectiveness of reduction of the turn ratio of the high-voltage high-frequency transformer on improvements in power conversion efficiency and the power factor applying a boost AC-DC converter as DC voltage source, especially in the long exposure term and light output load ranges.

• Animal Systematics, Evolution and Diversity
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• 제39권4호
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• pp.169-175
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• 2023

A branchial parasitic bopyrid, Parabopyrella elongata (Shiino, 1949), is newly recorded in Korean fauna. Parabopyrella elongata differs from its congeners by the following characteristics: the head is smooth anteriorly in females; the pleon of females has distinct and wide lateral indentations on both sides; the pleotelson has a rounded distal end in females; oostegite 1 has a rounded posterolateral point; the pleon of males is single-segmented; and the uropod is absent in males. In this study, the detailed description and illustrations of the species are presented with an emended key to known Parabopyrella species in the Far East. The variations in P. elongata were also discussed. This is the first report of the genus Parabopyrella from South Korea.

• 대한전자공학회논문지TC
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• 제43권4호
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• pp.44-51
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• 2006

본 논문에서는 우선 지그재그 와이어 다이폴 안테나 공진 특성을 모멘트법을 사용하여 분석함으로써, 직선형 와이어 안테나의 공간 점유 길이를 단축시킬 수 있음을 보였다. 이 단축 효과를 고려하여, 간소화된 마이크로스트립 급전부를 갖는 집적화된 지그재그 다이폴 안테나를 설계하였다. 집적화시 안테나 라인 폭의 급격한 구부림 각도에 의해 불연속이 존재하므로 chamfer를 적용함으로써 보상시키고, 유전체 기판의 영향을 고려하여 기판 양면에 기생소자 역할을 하는 지그재그 라인을 부가함으로써 공진특성을 개선시켰다. UHF와 ISM 대역에서 설계된 결과들의 타당성을 실험을 통해 입증하였다.

• 전력전자학회논문지
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• 제20권6호
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• pp.558-565
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• 2015

Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.533-536
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• 1998

The electrical characteristics of NMOSFETs with asymmetrical source/drain regions have been expermentally investigated using test devices fabricated by $0.35\mu\textrm{m}$ CMOS technology. The performance degradation for asymmetric transistor and its causes are analyzed. The parasitic resistances, such as series resistance of active regions and silicide junction contact resistance, are distributed in parallel along the channel. Depending on source/drain geometry, the array of those resistances is changed, that results the various electrical properties.

• Parasites, Hosts and Diseases
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• 제59권1호
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• pp.35-45
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• 2021

Adult echinostomes having 37 collar spines collected from the intestine of Pitalah ducks in Aceh Province, Indonesia in 2018 were morphologically and molecularly determined to be Echinostoma miyagawai Ishii, 1932 (Digenea: Echinostomatidae). Among 20 ducks examined, 7 (35.0%) were found to be infected with this echinostome, and the number of flukes collected was 48 in total with average 6.9 (1-17) worms per duck. The adult flukes were 7.2 (6.1-8.5) mm in length and 1.2 (1.0-1.4) mm in width (pre-ovarian or testicular level) and characterized by having a head collar armed with 37 collar spines (dorsal spines arranged in 2 alternating rows), including 5 end group spines, and variable morphology of the testes, irregularly or deeply lobed (3-5 lobes) at times with horizontal extension. The eggs within the worm uterus were 93 (79-105) ㎛ long and 62 (56-70) ㎛ wide. These morphological features were consistent with both E. miyagawai and Echinostoma robustum, for which synonymy to each other has been raised. Sequencing of 2 mitochondrial genes, cox1 and nad1, revealed high homology with E. miyagawai (98.6-100% for cox1 and 99.0-99.8% for nad1) and also with E. robustum (99.3-99.8% for nad1) deposited in GenBank. We accepted the synonymy between the 2 species and diagnosed our flukes as E. miyagawai (syn. E. robustum) with redescription of its morphology. Further studies are required to determine the biological characteristics of E. miyagawai in Aceh Province, Indonesia, including the intermediate host and larval stage information.

• 센서학회지
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• 제30권6호
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• pp.436-440
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• 2021

The impact of the gate length (L_g) on the DC and high-frequency characteristics of indium-rich In_0.8Ga_0.2As channel high-electron mobility transistors (HEMTs) on a 3-inch InP substrate was inverstigated. HEMTs with a source-to-drain spacing (L_SD) of 0.8 ㎛ with different values of L_g ranging from 1 ㎛ to 19 nm were fabricated, and their DC and RF responses were measured and analyzed in detail. In addition, a T-shaped gate with a gate stem height as high as 200 nm was utilized to minimize the parasitic gate capacitance during device fabrication. The threshold voltage (V_T) roll-off behavior against L_g was observed clearly, and the maximum transconductance (g_{m_max}) improved as L_g scaled down to 19 nm. In particular, the device with an L_g of 19 nm with an L_SD of 0.8 mm exhibited an excellent combination of DC and RF characteristics, such as a g_{m_max} of 2.5 mS/㎛, On resistance (R_ON) of 261 Ω·㎛, current-gain cutoff frequency (f_T) of 738 GHz, and maximum oscillation frequency (f_max) of 492 GHz. The results indicate that the reduction of L_g to 19 nm improves the DC and RF characteristics of InGaAs HEMTs, and a possible increase in the parasitic capacitance component, associated with T-shap, remains negligible in the device architecture.