Electrical Characteristics of NMOSFET's with Asymmetric Source/Drain Region

비대칭 소오스/드레인을 갖는 NMOSFET의 전기적 특성

The electrical characteristics of NMOSFETs with asymmetrical source/drain regions have been expermentally investigated using test devices fabricated by $0.35\mu\textrm{m}$ CMOS technology. The performance degradation for asymmetric transistor and its causes are analyzed. The parasitic resistances, such as series resistance of active regions and silicide junction contact resistance, are distributed in parallel along the channel. Depending on source/drain geometry, the array of those resistances is changed, that results the various electrical properties.