• Journal of the Korean Ceramic Society
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• v.38 no.8
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• pp.724-731
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• 2001

스크린 인쇄법에 의해 Si 기판에 PZT 후막의 제조에 있어서 주요 문제점은 낮은 소결밀도 및 PZT 후막과 Si 기판과의 반응현상이다. 이러한 현상을 억제하기 위해 본 연구에서는 스크린 인쇄법 및 PZT sol-gel 처리법의 혼합된 방법을 채택하여 Pt/TiO$_2$/YSZ/SiO$_2$/Si(100) 기판에 Zr/Ti 비가 52/48인 PZT 후막을 제조하였으며, 소결온도에 따른 잔류분극(P$_{r}$), 유전상수($\varepsilon$$_{r}$) 및 압전상수(d$_{33}$)를 측정하였다. 인쇄된 PZT 후막에 졸 처리함으로써 단순히 인쇄된 후막에 비해 전기적 특성이 증진된 결과를 얻었다.다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.39-42
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• 2000

The effect of excess Pb contents on the etching of PZT thin films and their electrical properties has been investigated. Ferroelectric PZT(53/47) thin films were prepared by the metal alkoxide-based Sol-Gel method, in which they were spin-coating on P7Ti/Si02/Si substrate using the PZT(53/47) stock solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar/Cl$_2$/BCl$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.13-17
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• 2005

The Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃/(Ba/sub 0.6/Sr/sub 0.4/)TiO₃[PZT/BST] heterolayered thin films were deposited on Pt/Ti/SiO₂/Si substrates by using the RF sputtering method with different RF power. The PZT/BST heterolayered thin films had the tetragonal structure of the PZT phase and BST phase. Increasing the RF power. the intensity of the PZT (100), (110) peaks and BST (111) peaks were decreased and the intensity of the BST (100), (110) peaks were increased. The thickness ratio of the top layered BST thin film and the bottom layered PZT thin film was 2 to1. The atomic concentration of the Ba, Sr, Pb. Zr, Ti atoms were constant in the PZT thin films and BST thin films, respectively. The Pt atom was diffused to the PZT region in the PZT/BST heterolayered thin films deposited at condition of 60[W] RF power. Increasing the frequency, dielectric constant and loss of the PZT/BST heterolayered thin films were decreased. The dielectric constant and loss of the PZT/BST heterolayered thin films deposited with RF power of 90[W] were 406 and 3%, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.966-970
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• 2006

We reported on characteristics of the piezoelectric ceramic-polymer composite for the application of the thick-film speaker. The PVDF-PZT composites were fabricated to incorporate the advantages of both ceramic and polymer with various mixing ratios by 3-roll mill mixer. The composite solutions were coated by the conventional screen-printing method on ITO electrode coated PET (Polyethylene terephthalate) polymer film. After depositing the top-electrode of silver-paste, 4 kV/mm of DC field was applied at $120^{\circ}C$ for 30 min to poling the composite films. The value of $d_{33}$ (piezoelectric charge constant) was increased when the PZT weight percent was increased. The maximum value of the $d_{33}$ was 24 pC/N at 70 wt% PZT. But the $g{33}$ (piezoelectric voltage constant) showed the maximum value of $32mV{\cdot}m/N$ at 65 wt% of PZT powder. The SPL (sound pressure level) of the speaker fabricated with the 65:35 composite film was about 68 dB at 1 kHz.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.1
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• pp.14-19
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• 2003

The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties of the PZT thin film with minimal leakage current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.717-720
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• 2001

Ferroelectric lead ziroconate titanate (PZT) thin film were fabricated on the different bottom electrodes. Both Ru and Ru/RuO$_2$bottom electrodes were deposited by RF-magnetron sputteirng method. The structure phase and surface morphology of the PZT thin film were largely affected by the bottom electrode. It was observerd that used of Ru/RuO$_2$double electrode reduced leakage current and better ferroelectric properties compare with RuO$_2$bottom electrode. From these results, Ru/RuO$_2$hybride bottom electrode is thought to be the available structure for the bottom electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.107-108
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• 2005

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.596-600
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• 1998

A method for the nondestructive read-out of the memory in ferroelectric thin films is demonstrated using the detection second harmonic currents introduced in the ferrolelectric capacitor as a response to an ac signal. The sign and phase of the second harmonic current depends on the polarized state +$P_r or -P_r$, The studied ferroelectric PZT thin film is found to have desirable features for the use as a memory element. This method and material seems as a promising approach for the nonvolatile memory storage.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.21-24
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• 2005

This work is to present each properties and the interfacial characterization between PZT layer and LSMO layer of PZT/LSMO/Pt. LSMO thin film grown by KrF(248 nm) excimer lasers are used in pulsed in pulsed laser deposition(PLD). PZT coposites thin films were deposited by spin coating using a commercial resist spinner. LSMO thin film by deposition oxygen pressure 125 mtorr have rhombohedral structure on Pt(111) substrate. The PZT/LSM/Pt pre-orientate to [111] direction. The final thin films were shown that magnetic and electric property was typical value, respective. We report that the lattice between the PZT/LSMO thin film and the substrate plays a very important role and may control to another effects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.155-158
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• 2002

Eu-doped lead zirconium titanate $Pb_{1.1}(Zr_{0.3}Ti_{0.7})O_{3}$ thin films on the Pt/Ti/$SiO_2$/Si substrates prepared by a metalorganic decomposition (MOD) method. The effect on the structural and electrical properties of the films measured according to Eu content. Eu-doping altered significantly the dielectric and ferroelectric properties. The remanent polarization and coercive field decreased with increasing the concentration of Eu content. The dielectric constant and dielectric loss of the film decreased with increasing Eu contents. The 3 mol% of Eu-doped PZT thin film showed large remanent polarization and the fatigue characteristic of the film did not change up to $10^9$ switching cycles.