Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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CMP of PZT Films for ERAM Applications

강유전소자 적용을 위한 PZT박막의 CMP 공정 연구

  • 서용진 (대불대학교 전기공학과) ;
  • 고필주 (조선대학교 전기공학과) ;
  • 김남훈 (조선대학교 전기공학과 에너지자원신기술연구소) ;
  • 이우선 (조선대학교 전기공학과)
  • Published : 2005.11.10
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Abstract

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

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