Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structure Behavior of Sputtered W-B-C-N Thin Film for various nitrogen gas ratios

PVD법으로 증착한 W-B-C-N 박막의 질소량에 따른 구조변화 연구

  • 송문규 (국민대학교 나노전자물리학과 반도체물리연구실) ;
  • 이창우 (국민대학교 나노전자물리학과 반도체물리연구실)
  • Published : 2005.11.10
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Abstract

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

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